LM112/LM212/LM312 Operational Amplifiers General Description The LM112 series are micropower operational amplifiers with very low offset-voltage and input-current errorsÐat least a factor of ten better than FET amplifiers over a b 55§ C to a 125§ C temperature range. Similar to the LM108 series, that also use supergain transistors, they differ in that they include internal frequency compensation and have provisions for offset adjustment with a single potentiometer. These amplifiers will operate on supply voltages of g 2V to g 20V, drawing a quiescent current of only 300 mA. Performance is not appreciably affected over this range of voltages, so operation from unregulated power sources is easily accomplished. They can also be run from a single supply like the 5V used for digital circuits. The LM112 series are the first IC amplifiers to improve reliability by including overvoltage protection for the MOS compensation capacitor. Without this feature, IC’s have been known to suffer catastrophic failure caused by short-duration overvoltage spikes on the supplies. Unlike other internally-compensated IC amplifiers, it is possible to overcompensate with an external capacitor to increase stability margin. The LM212 is identical to the LM112, except that the LM212 has its performance guaranteed over a b25§ C to a 85§ C temperature range instead of b55§ C to a 125§ C. The LM312 is guaranteed over a 0§ C to a 70§ C temperature range. Features Y Y Y Y Maximum input bias current of 3 nA over temperature Offset current less than 400 pA over temperature Low noise Guaranteed drift specifications Connection Diagram Metal Can Package TL/H/7751 – 4 Top View Order Number LM112H, LM212H, LM312H or LM112H/883 See NS Package Number H08C Auxiliary Circuits Offset Balancing Overcompensation for Greater Stability Margin TL/H/7751 – 2 C1995 National Semiconductor Corporation TL/H/7751 TL/H/7751 – 3 RRD-B30M115/Printed in U. S. A. LM112/LM212/LM312 Operational Amplifiers September 1992 Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. (Note 5) LM112/LM212 LM312 g 20V g 18V Supply Voltage Power Dissipation (Note 1) 500 mW 500 mW g 10 mA g 10 mA Differential Input Current (Note 2) g 15V g 15V Input Voltage (Note 3) Output Short-Circuit Duration Continuous Continuous Operating Temperature Range b 55§ C to a 125§ C LM112 0§ C to a 70§ C b 25§ C to a 85§ C LM212 b 65§ C to a 150§ C b 65§ C to a 150§ C Storage Temperature Range 300§ C Lead Temperature (Soldering, 10 sec.) 300§ C ESD rating to be determined. Electrical Characteristics (Note 4) Parameter LM112/LM212 Conditions Min LM312 Typ Max Min Units Typ Max Input Offset Voltage TA e 25§ C 0.7 2.0 2.0 7.5 mV Input Offset Current TA e 25§ C 0.05 0.2 0.2 1 nA Input Bias Current TA e 25§ C 0.8 2.0 1.5 7 Input Resistance TA e 25§ C Supply Current TA e 25§ C Large Signal Voltage Gain TA e 25§ C, VS e g 15V VOUT e g 10V, RL t 10 kX 30 70 0.3 50 10 0.6 300 Input Offset Voltage 40 0.3 25 3.0 Input Offset Current 15 6.0 0.4 Average Temperature Coefficient of Input Offset Current 0.5 2.5 0.15 0.4 Input Bias Current 2.0 3.0 Supply Current TA e 125§ C Large Signal Voltage Gain VS e g 15V, VOUT e g 10V RL t 10 kX Output Voltage Swing VS e g 15V, RL e 10 kX Input Voltage Range VS e g 15V 25 g 13 g 14 mA V/mV 10 mV 30 mV/§ C 1.5 nA 10 pA/§ C 10 nA mA 15 g 13.5 0.8 300 3.0 Average Temperature Coefficient of Input Offset Voltage nA MX g 13 V/mV g 14 g 14 V V Common-Mode Rejection Ratio 85 100 80 100 dB Supply Voltage Rejection Ratio 80 96 80 96 dB Note 1: The maximum junction temperature of the LM112 is 150§ C, LM212 is 100§ C and LM312 is 85§ C. For operating at elevated temperatures, devices in the H08 package must be derated based on a thermal resistance of 160§ C/W, junction to ambient, or 20§ C/W, junction to case. Note 2: The inputs are shunted with shunt diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used. Note 3: For supply voltages less than g 15V, the absolute maximum input voltage is equal to the supply voltage. Note 4: These specifications apply for g 5V s VS s g 20V and b 55§ C s TA s a 125§ C (LM112), b 25§ C s TA s a 85§ C (LM212), g 5V s VS s g 15V and 0§ C s TA s a 70§ C (LM312) unless otherwise noted. Note 5: Refer to RETS112X for LM112H military specifications. 2 Typical Performance Characteristics LM112/LM212 Input Currents Offset Error Drift Error Input Noise Voltage Power Supply Rejection Closed Loop Output Impedance Voltage Gain Output Swing Supply Current Open Loop Frequency Response Large Signal Frequency Response Voltage Follower Pulse Response TL/H/7751 – 5 3 Typical Performance Characteristics LM312 Input Currents Offset Error Drift Error Input Noise Voltage Power Supply Rejection Closed Loop Output Impedance Voltage Gain Output Swing Supply Current Open Loop Frequency Response Large Signal Frequency Response Voltage Follower Pulse Response TL/H/7751 – 6 4 TL/H/7751 – 1 Schematic Diagram 5 LM112/LM212/LM312 Operational Amplifiers Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM112H, LM212H, LM312H or LM112H/883 NS Package Number H08C LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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