GXELECTRONICS SF51

SF51 – SF57
星合电子
XINGHE ELECTRONICS
5.0A SUPER-FAST RECTIFIER
Features
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Diffused Junction
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Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
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C
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
D
DO-201AD
Dim
Min
Max
A
25.4
—
B
8.50
9.50
C
1.20
1.30
D
5.0
5.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Symbol
SF51
SF52
SF53
SF54
SF55
SF56
SF57
Unit
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
VR(RMS)
35
70
105
140
210
280
420
V
IO
5.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 5.0A
VFM
@TA = 25°C
@TA = 100°C
IRM
5.0
100
µA
Reverse Recovery Time (Note 2)
trr
35
nS
Typical Junction Capacitance (Note 3)
Cj
Operating Temperature Range
Tj
-65 to +125
°C
TSTG
-65 to +150
°C
Peak Reverse Current
At Rated DC Blocking Voltage
Storage Temperature Range
@TA = 50°C
0.95
1.3
110
1.7
50
V
pF
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359
SF51 – SF57
星合电子
5.0A SUPER-FAST RECTIFIER
5
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)
XINGHE ELECTRONICS
Single phase half wave
Resistive or Inductive load
4
3
2
1
0
25
50
75
100
125
150
175
100
SF51 - SF54
10
SF55 - SF56
SF57
1.0
0.1
0.01
0.6
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1.0
1.4
1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
200
1000
8.3ms single half
sine-wave
100
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
Tj = 25°C
Pulse width = 300µs
2% duty cycle
10
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
SF51 - SF54
100
SF55 - SF57
10
1
100
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
2
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359
100