PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20(℃) 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY7N80T / HY7N80FT 800V / 7A N-Channel Enhancement Mode MOSFET 800V, RDS(ON)=1.65W@VGS=10V, ID=3.5A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives 1 1 2 Mechanical Information 3 • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Marking & Ordering Information 2 3 2 Drain 3 Source 1 TYPE MARKING PACKAGE PACKING HY7N80T 7N80T TO-220AB 50PCS/TUBE HY7N80FT 7N80FT ITO-220AB 50PCS/TUBE Gate Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol HY7N80T HY7N80FT Units Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS +30 V Continuous Drain Current TC=25℃ Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=7A, VDD=123V, L=18.5mH Operating Junction and Storage Temperature Range ID 7 7 A IDM 28 28 A PD 147 1.23 50 0.4 W EAS 450 mJ TJ, TSTG -55 to +150 ℃ Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter Symbol HY7N80T HY7N80FT Units Junction-to-Case Thermal Resistance RqJC 0.85 2.5 V Junction-to-Case Thermal Resistance RqJA 62.5 100 V COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV 1.0, 25-Sept-2012 PAGE.1 HY7N80T / HY7N80FT Electrical Characteristics ( TC=25℃, Unless otherwise noted ) Paramter Symbol Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V、ID=250uA 800 - - V Gate Threshold Voltage VGS(th) VDS=VGS、ID=250uA 2 - 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V、ID=3.5A - 1.39 1.65 W Zero Gate Voltage Drain Current IDSS VDS=800V、VGS=0V - - 1 uA Gate Body Leakage Current IGSS VGS=+30V、VDS=0V - - +100 nA - 26.8 - - 7.6 - Static Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 8.3 - Turn-On Delay Time td(on) - 28.2 36.8 - 72.8 88 - 68.4 82.6 - 32 38.4 - 1150 - - 120 - - 6.5 - Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=640V，ID=7A VGS=10V VDD=400V，ID=7A VGS=10V，RG=25W VDS=25V，VGS=0V f=1.0MHZ nC ns pF Source-Drain Diode Max. Diode Forwad Voltage IS - - - 7 A Max. Pulsed Source Current ISM - - - 28 A Diode Forward Voltage VSD IS=7A、VGS=0V - - 1.4 V Reverse Recovery Time trr - 195 - ns Reverse Recovery Charge Qrr VGS=0V、IS=7A di/dt=100A/us - 0.62 - uC NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2% REV 1.0, 25-Sept-2012 PAGE.2 HY7N80T / HY7N80FT Typical Characteristics Curves ( TC=25℃, unless otherwise noted) ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 14 VGS= 20V~ 8.0V 12 7.0V 10 8 6.0V 6 4 5.0V 2 0 VDS =50V 10 1 -55oC 0.1 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 50 1 Fig.1 Output Characteristric 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 8 RDS(ON) - On Resistance(W) RDS(ON) - On Resistance(W) 2 Fig.2 Transfer Characteristric 3 2.5 2 VGS=10V 1.5 VGS = 20V 1 0.5 ID =3.5A 6 4 2 0 0 0 2 4 6 8 4 10 5 ID - Drain Current (A) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 2000 12 f = 1MHz VGS = 0V 1600 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 25oC TJ = 125oC Ciss 1200 800 400 Coss Crss 0 ID =7A 10 VDS=520V VDS=325V 8 VDS=130V 6 4 2 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV 1.0, 25-Sept-2012 30 0 4 8 12 16 20 24 28 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE.3 HY7N80T / HY7N80FT Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 1.2 VGS =10 V ID =3.5A 2.1 BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 1.7 1.3 0.9 ID = 250mA 1.1 1 0.9 0.8 0.5 -50 -25 0 25 50 75 100 TJ - Junction Temperature 125 150 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) (oC) Fig.7 On-Resistance vs Junction Temperature Fig.8 Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.9 Body Diode Forward Voltage Characteristic REV 1.0, 25-Sept-2012 PAGE.4