VUB 116 / 145 Advanced Technical Information VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t Conditions Rectifier Diodes Symbol 18 17 21+22 Maximum Ratings VUB 116 VUB 145 1600 1600 TC = 100°C, sinusoidal 120° 116 TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0 V TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0 V Features 145 V A • Soldering connections for PCB mounting • Convenient package outline • Thermistor 650 570 900 780 A A Applications 2110 1620 4050 3040 A A TC = 25°C per diode 190 250 W VCES VGE TVJ = 25°C to 150°C Continuous 1200 ± 20 1200 ± 20 V V IC25 IC80 TC = 25°C, DC TC = 80°C, DC 95 67 141 100 A A IGBT Ptot tp = Pulse width limited by TVJM 100 150 A Ptot TC = 25°C 380 570 W VRRM IFAV IFRMS IFRM IFSM Ptot Fast Recovery Diode ICM 1200 27 38 tbd V A A A TVJ = 45°C, t = 10 ms 200 A TC = 25°C 130 W -40...+150 150 -40...+125 °C °C °C 2500 3000 V~ V~ 2.25...2.75 20...25 Nm lb.in. TC = 80°C, rectangular d = 0.5 TC = 80°C, rectangular d = 0.5 TC = 80°C, tP = 10 µs, f = 5 kHz TVJ TVJM Tstg Md Module VISOL 50/60 Hz, t = 1 min IISOL ≤ 1 mA, t = 1 s Mounting torque dS dA a Creep distance on surface Strike distance in air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s2 Weight typ. 180 g Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved • Drive Inverters with brake system Advantages • 2 functions in one package • Easy to mount with two screws • Suitable for wave soldering • High temperature and power cycling capability Dimensions in mm (1 mm = 0.0394") 240 VRRM 13 1-2 Advanced Technical Information Conditions IR VR = VRRM, TVJ = 25°C VR = VRRM, TVJ = 150°C VT0 rT RthJC Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VUB 116 VUB 145 1.43 1.68 V V for power-loss calculations only VUB 116 VUB 145 VUB 116 VUB 145 0.85 0.85 7.1 5.9 V V mΩ mΩ VUB 116 VUB 145 0.65 K/W 0.5 K/W VUB 116 VUB 145 0.1 K/W 0.1 K/W TVJ = 150°C per diode VGS = 0 V, IC = 0.1 mA IC = 8 mA IC = 3 mA ICES TVJ = 25°C, VCE = 1200 V TVJ = 125°C, VCE = 0,8 • VCES VCEsat VGE = 15 V, IC = 100 A VGE = 15 V, IC = 150 A tSC (SCSOA) VGE = 15 V, VCE = 720 V, TVJ = 125°C, RBSOA VGE = 15 V, VCE = 1200 V, TVJ = 125°C, clamped inductive load, L = 100 µH RG = 22 Ω VUB 116 RG = 15 Ω VUB 145 IGBT VBR(CES) VGE(th) VUB 116 VUB 145 1200 4.5 4.5 VUB 116 VUB 145 VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 116 VUB 145 td(on) td(off) Eon VCE = 720 V, IC = 50/75 A VGE = 15 V, RG = 32/15 Ω Inductive load; L = 100 µH TVJ = 125°C Eoff mA mA IF = 80 A, TVJ = 25°C IF = 150 A, TVJ = 25°C RthCH Cies 0.1 2 VUB 116 VUB 145 VUB 116 VUB 145 6.45 6.45 V V V 0.1 0.5 mA mA 3.5 3.7 V V 10 µs 100 150 A A 3.8 5.7 nF nF 150 680 6 9 5 7.5 ns ns mJ mJ mJ mJ RthJC VUB 116 VUB 145 0.33 K/W 0.22 K/W RthJH VUB 116 VUB 145 0.66 K/W 0.44 K/W VF VT0 rT IRM trr VR = VRRM, TVJ = 25°C VR = 1200 V, TVJ = 125°C Fast Recovery Diode IR IF = 30 A, TVJ = 25°C For power-loss calculations only TVJ = 150°C IF = 50 A, -diF/dt = 100 A/µs, VR = 100 V 5.5 IF = 1 A, -diF/dt = 200 A/µs, VR = 30 V 40 mA mA 2.76 V 1.3 16 V mΩ 11 A ns 0.9 K/W 0.1 K/W NTC RthJC RthCH R25 B25/50 0.25 1 © 2002 IXYS All rights reserved 4.75 5.0 5.25 3375 kΩ K 240 VF Rectifier Rectifier Diodes Diodes Symbol VUB 116 / 145 2-2