SEMICONDUCTOR KTD1047B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES ・Complementary to KTB817B. B Q K F ・Recommended for 60W Audio Frequency R G H I C J Amplifier Output Stage. D MAXIMUM RATING (Ta=25℃) E SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V DC IC 12 Pulse ICP 15 Collector Power Dissipation (Tc=25℃) PC 100 W Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ L CHARACTERISTIC M d P 1 Collector Current Storage Temperature Range A P 2 T 3 DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-3P(N)-E ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 0.1 mA Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 mA 200 hFE (1) (Note) VCE=5V, IC=1A 60 - hFE 2 VCE=5V, IC=6A 20 - Collector-Emitter Saturation Voltage VCE(sat) IC=5A, IB=0.5A - - 2.5 V Base-Emitter Voltage VBE(ON) VCE=5V, IC=1A - - 1.5 V Transition Frequency fT VCE=5V, IC=1A - 15 - MHz pF DC Current Gain Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 210 - Turn On Time ton VCC=20V - 0.26 - Fall Time tf IC=1A=10・IB1=-10・IB2 - 0.68 - Storage Time tstg RL=20Ω - 6.88 - μS Note : hFE(1) Classification O:60～120, Y:100～200 2011. 3. 18 Revision No : 0 1/3 KTD1047B h FE - I C I C - V CE 1k 240mA 200mA 160mA 8 120mA 80mA 6 40mA 4 20mA 2 I B =0 0 0 10 VCE =5V 500 300 DC CURRENT h FE COLLECTOR CURRENT IC (A) 10 20 30 40 100 50 30 10 5 3 1 0.1 50 0.3 1 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) IC /I B =10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1 5 0.5 0.3 0.3 0.5 1 3 I C - VBE f T - IC 6 5 4 3 2 1 0.4 0.8 1.2 BASE-EMITTER VOLTAGE V BE (V) 2011. 3. 18 1 COLLECTOR CURRENT I C (A) VCE =5V 0 I C /I B =10 3 0.1 0.1 10 7 0 100 5 COLLECTOR CURRENT I C (A) 8 COLLECTOR CURRENT I C (A) 3 TRANSITION FREQUENCY f T (MHz) COLLECTOR-EMITTER VOLTAGE VCE(sat) (V) 10 0.5 30 V BE(sat) - I C VCE(sat) - I C 0.3 10 COLLECTOR CURRENT I C (A) COLLECTOR EMITTER VOLTAGE V CE (V) 0.1 3 Revision No : 0 1.6 5 10 100 VCE =5V 50 30 10 5 3 1 0.1 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) 2/3 KTD1047B SAFE OPERATING AREA 1k 500 100 50 30 100 50 30 10 10 5 3 0m S 1m S m 10 300 S 1 0.5 0.3 0.1 10 1 3 10 30 COLLECTOR-BASE VOLTAGE V CB (V) 2011. 3. 18 COLLECTOR CURRENT I C (A) f=1MHz DC COLLECTOR OUTPUT CAPACITANCE C ob (pF) C ob - V CB Revision No : 0 100 1 3 10 30 100 300 1k COLLECTOR-EMITTER VOLTAGE V CE (V) 3/3