LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series FEATURE ƽEpitaxial planar type 3 ƽComplementary to L2SA1036K ƽ We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION Device 2 Marking Shipping L2SC2411KQLT1G CQ 3000/Tape&Reel L2SC2411KQLT3G CQ 10000/Tape&Reel L2SC2411KRLT1G CR 3000/Tape&Reel L2SC2411KRLT3G CR 10000/Tape&Reel SOT– 23 (TO–236AB) 3 COLLECTOR MAXIMUM RATINGS (TA = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 5 0.5 0.2 150 -55~+150 1 BASE Unit V V V A* W °C °C 2 EMITTER *PC must not be exceeded. ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltgae Collector cutoff current Emitter cutoff current DC current transfer ratio Collcetor-emitter saturation voltage Transition frequency Output capacitance BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 32 5 120 - Typ 250 6.0 Max. 1 1 390 0.4 - Unit V V V µA µA V MHz pF Conditions IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V VCE=3V ,I C =100mA IC/IB=500mA/50mA VCE=5V,IE=-20mA,f=100MHz VCB=10V,IE=0A,f=1MHz hFE values are classified as follows: Item hFE Q R 120~270 180~390 Rev.O 1/4 LESHAN RADIO COMPANY, LTD. ° L2SC2411KQLT1G Series Electrical characteristic curves(TA = 25 C) 1000 100 VCE =6V 500 100 COLLECTOR CURRENT : I (mA) C Ta=100OC 50 25OC 80OC 25OC 20 10 0.45m A 0.50m 55 OC 5 2 1 0.5 0.40mA 0.35mA 0.30mA 0.25mA 50 0.20mA 0.15mA 0.10mA 0.05mA 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 1 Grounded emitter propagation characteristics 500 Ta = 25OC 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA C 400 300 0.8mA 200 0.6mA 0.4mA 100 0.2mA 0 1 2 3 4 I B= 0A 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.3 Fig.2 Grounded emitter output characteristics(II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 2 3 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) BASE TO EMITTER VOLTAGE : VBE(V) 0 I B = 0A 4 0 0.1 0.2 COLLECTOR CURRENT : I (mA) A C COLLECTOR CURRENT : I (mA) 200 Ta = 25OC 1 Grounded emitter output characteristics(I) Ta = 25OC l C /l B = 10 0.5 0.2 0.1 0.05 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.4 Collector-emitter saturation voltage vs. collector current Rev.O 2/4 LESHAN RADIO COMPANY, LTD. L2SC2411KQLT1G Series Electrical characteristic curves(TA = 25°C) 500 TRANSITION FREQUENCY : f (MHz) V CE = 3V O 200 100 C Ta = 100O 75 C O 50 C O 25 C O 0 C O 25 C OC 50 50 20 0.5 1 2 5 10 20 50 100 200 200 100 50 500 1000 0.5 1 2 COLLECTOR CURRENT : IC(mA) 5 10 20 EMITTER CURRENT : I (mA) E Fig.6 Gain bandwidth product vs. emitter current Fig.5 DC current gain vs. collector current O : Cib(pF) 0.2 Ta = 25 C f = 1MHz I E =0A I C = 0A 50 Cib EMITTER INPUT CAPACITANCE 10 0.1 O Ta = 25 C V CE = 5V T 500 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) DC CURRENT GAIN : h FE 1000 20 Cob 10 5 2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCE(V) EMITTER TO BASE VOLTAGE: VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.O 3/4 50 LESHAN RADIO COMPANY, LTD. L2SC2411KQLT1G Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4