General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SA1576AQT1G Series
S-L2SA1576AQT1G Series
ORDERING INFORMATION
3
Device
L2SA1576AQLT1G Series
S-L2SA1576AQLT1G Series
L2SA1576AQLT3G Series
S-L2SA1576AQLT3G Series
Shipping
Package
SC-70
3000/Tape & Reel
SC-70
10000/Tape & Reel
1
2
SC-70/SOT– 323
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
–50
V
Collector–Base Voltage
V CBO
–60
V
Emitter–Base Voltage
V
–6.0
V
EBO
3
COLLECTOR
1
BASE
Collector Current — Continuous
IC
–150
mAdc
Collector power dissipation
PC
0.15
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55 ~+150
°C
2
EMITTER
DEVICE MARKING
L2SA1576AQT1G =FQ L2SA1576ART1G=FR L2SA1576AST1G =FS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = –1 mA)
Emitter–Base Breakdown Voltage
(IE = – 50 µA)
Collector–Base Breakdown Voltage
(IC = – 50 µA)
Collector Cutoff Current
(VCB = – 60 V)
Emitter cutoff current
(VEB = – 6 V)
Collector-emitter saturation voltage
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio
(V CE = – 6 V, I C= –1mA)
Transition frequency
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance
(V CB = – 12 V, I E= 0A, f =1MHz )
Symbol
Min
Typ
Max
Unit
V
– 50
—
—
V
V (BR)EBO
–6
—
—
V
V
– 60
—
—
V
I CBO
—
—
– 0.1
µA
I EBO
—
—
– 0.1
µA
V CE(sat)
—
—
-0.5
V
h FE
120
––
560
––
fT
—
140
––
MHz
C ob
—
4.0
5.0
pF
(BR)CEO
(BR)CBO
h FE values are classified as follows:
*
hFE
Q
120~270
R
180~390
S
270~560
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L2SA1576AQT1G Series
S-L2SA1576AQT1G Series
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
–50
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
–20
–35.0
–10
VCE= –10 V
T A = 100°C
25°C
– 40°C
–10
–50
–2
–1
–0.5
T A = 25°C
–28.0
–8
–24.5
–21.0
–6
–17.5
–14.0
–4
–10.5
–7.0
–2
–3.5µA
–0.2
–0.1
I B =0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
0
–1.6
–0.4
–0.8
–1.2
–1.6
–2.0
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
–100
500
T A = 25°C
–80
–60
VCE= –5 V
–3V
–1V
T A = 25°C
500
450
400
350
300
h FE, DC CURRENT GAIN
I C, COLLECTOR CURRENT (mA)
–31.5
–250
–200
–150
–40
–100
–20
–50 µA
200
100
50
I B =0
0
0
–1
–2
–3
–4
–5
–0.2
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
–0.5
–1
–2
–5
–10
–20
–50
–100
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
Fig.5 DC current gain vs. collector current ( )
500
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
collector current ( )
T A = 100°C
h FE, DC CURRENT GAIN
25°C
–40°C
200
100
50
VCE= – 6V
–0.2
–0.5
–1
–2
–5
–10
–20
I C, COLLECTOR CURRENT (mA)
–50
–100
–1
T A = 25°C
–0.5
–0.2
I C /I B = 50
20
–0.1
10
–0.05
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I C, COLLECTOR CURRENT (mA)
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SA1576AQT1G Series
S-L2SA1576AQT1G Series
Fig.8 Gain bandwidth product vs. emitter current
1000
–1
T A = 25°C
V CE = –12V
f r , TRANSITION FREQUENCY(MHz)
I C /I B = 10
–0.5
–0.2
T A = 100°C
25°C
–40°C
–0.1
–0.05
–0.2
–0.5
–1
–2
–5
–10
–20
–50
500
200
100
50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I E, EMITTER CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C ob , COLLECTOR OUTPUT CAPACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
20
T A = 25°C
f =1MHz
I E = 0A
I C = 0A
C ib
10
C ob
5
2
–0.5
–1
–2
–5
–10
–20
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SA1576AQT1G Series
S-L2SA1576AQT1G Series
SC-70/SOT-323
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
SOLDERING FOOTPRINT*
0.65
0.025
0.016
0.010
0.087
0.053
0.055
0.095
1
XX
M
1.9
0.075
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.9
0.035
SCALE 10:1
0.079
MAX
0.040
0.004
XXM
0.65
0.025
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.032
0.000
mm inches
Rev.O 4/4