LUGUANG 1N5711

1N5711
Small Signal Schottky Diodes
VOLTAGE RANGE: 70V
POWER DISSIPATION: 400 mW
DO - 35(GLASS)
Features
For general purpos e applications
Metal s ilicon s chottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fas t s witching m ake it ideal for protection of
MOS devices ,s teering,bias ing and coupling diodes for
fas t s witching and low logic level applications
Mechanical Data
Cas e:JEDEC DO--35,glas s cas e
Dimensions in millimeters
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage
Symbols
Value
UNITS
V RRM
70.0
V
1)
zm W
Pow er dissipation (Inf inite Heat Sink)
P tot
400
Maximum single cycle surge 10
IFSM
2.0
TJ
125
TSTG
c-55 ---+ 150
s square w ave
Junction tenperature
Storage temperature range
A
1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherw ise specified)
Reverse breakdow n voltage
@ IR=10
Leakage current
@ V R=50V
Forw ard voltage drop
@
A
IF=1mA
IF=15mA
Symbols
Min.
VR
70.0
Typ.
Max.
V
200.0
IR
UNITS
anA
0.41
VF
1.0
V
Junction capacitance @ V R=0V ,f=1MHz
CJ
2
pF
Reverse recovery time @ IF=IR=5mA ,recover to 0.1 IR
t rr
1
ns
RθJA
0.3
Termal resistance junction to ambient air
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/m W
1N5711
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD.
XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE
XXXXXXXX-SCHOTTKY BARRIER
FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF
XXXXX COMBINATION SCHOTTKY BARRIER AND PN
XXXXX JUNCTION GUARD RING
mA
mA
10
100
5
2
IF
80
IF
1
60
5
2
0.1
40
5
20
2
0.01
0
0
0.5
0
1
0 .5
1
V
VF
FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT
XXXXXXXXXVARIATION TEMPERATURES
µA
FIG.4 -- TYPICAL CAPACITANCE CURVE AS A
XXXXX- JUNCTION OF REVERSE VOLTAGE
pF
150
100
2
125℃
5
2
TJ=25
10
IR
V
VF
100℃
5
CJ
75℃
2
50
1
1
5
2
25℃
0 .1
5
2
0 .0 1
0
10
20
30
40
50
V
VR
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0
0
10
20
30
40
VR
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50
V