LL5711, LL6263

R
LL5711, LL6263
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
MiniMELF
For general purpose applications
Metal-on-silicon junction Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering, biasing and
0.063(1.6)
0.055(1.4)
coupling diodes for fast switching and low logic level applications
These diodes are also available in the DO-35 case with type
0.019(0.48)
0.011(0.28)
designation 1N5711 and 1N6263.
0.142(3.6)
0.134(3.4)
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case: MiniMELF glass case(SOD-80 )
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
LL5711
LL6263
Peak Reverse Voltage
Porwer Dissipation (infinite Heat Sink)
Maximum Single cycle surge 10ms square wave
Junction temperature
Storage Temperature Range
VRRM
VRRM
70
60
Ptot
IFSM
TJ
TSTG
400 1)
Units
2.0
V
V
mW
A
125
C
-55 to+150
C
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbols
Reverse breakover voltage
LL5711
LL6263
Min.
VR
VR
Typ.
Max.
Unis
V
V
70
60
Leakage current at VR=50V
IR
200
nA
Forward voltage drop at IF=1mA
IF=15mA
VF
VF
0.41
1.0
V
V
Junction Capacitance at VR=0V ,f=1MHz
CJ
2.0
pF
trr
RqJA
1
ns
300
K/W
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
Thermal resistance
JINAN JINGHENG ELECTRONICS CO., LTD.
2-64
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES LL5711 & LL6263
Fig.1 Typical variation of fwd. current vs forward. voltage for
primary conduction through the Schottky barrier
Fig.2 Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
mA
mA
10
100
5
80
2
1
60
5
IF
IF
2
40
0.1
5
20
2
0
0.01
0.5
0
1V
1V
0.5
0
VF
VF
Fig.4 Typical capacitance curve as a function of
reverse voltage
Fig.3 Typical variation of reverse current at
various temperatures
μA
pF
100
2
150 C
5
125 C
TJ=25 C
2
10
100 C
5
75 C
2
1
IR
1
50 C
CJ
5
2
0.1
25 C
5
2
0.01
0
0
10
20
30
40
0
50V
JINAN JINGHENG ELECTRONICS CO., LTD.
10
20
30
40
50V
VR
VR
2-65
HTTP://WWW.JINGHENGGROUP.COM