MIMIX XU1004

32.0-45.0 GHz GaAs MMIC
Transmitter
U1004-BD
October 2008 - Rev 16-Oct-08
Features
Chip Device Layout
Sub-harmonic Transmitter
Integrated Mixer, LO Doubler/Buffer & Output Amplifier
+14.0 dBm Output Third Order Intercept (OIP3)
+4.0 dBm LO Drive Level
5.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
General Description
Mimix Broadband’s 32.0-45.0 GHz GaAs MMIC transmitter has a
+14.0 dBm output third order intercept across the band. This
device is a balanced, resistive pHEMT mixer followed by a
distributed output amplifier and includes an integrated LO
doubler and LO buffer amplifier. The use of integrated LO
doubler and LO buffer amplifier makes the provision of the LO
easier than for fundamental mixers at these frequencies. IF and
IF mixer inputs are provided and an external 180 degree hybrid
is required to select the desired sideband. This MMIC uses
Mimix Broadband’s GaAs PHEMT device model technology, and
is based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
200, 180 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table 3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21) 2
LO Input Drive (PLO)
Isolation LO/RF @ LOx1
Isolation LO/RF @ LOx2
Output Third Order Intercept (OIP3) 1,2
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3,4) Mixer, Doubler
Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical)
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dB
dB
dBm
VDC
VDC
VDC
mA
mA
Min.
35.0
32.0
16.0
DC
-1.2
-1.2
-
Typ.
10.0
5.0
+4.0
TBD
TBD
+14.0
+4.0
-0.3
-0.5
160
145
Max.
45.0
42.0
25.0
4.0
+5.5
+0.1
+0.1
180
165
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
32.0-45.0 GHz GaAs MMIC
Transmitter
U1004-BD
October 2008 - Rev 16-Oct-08
Transmitter Measurements
Conversion Gain (dB)
XU1004-BD Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, USB
LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1310 Devices
10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
43.0
44.0
45.0
43.0
44.0
45.0
RF Frequency (GHz)
Max
Median
Mean
-3sigma
Conversion Gain (dB)
XU1004-BD Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, LSB
LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1310 Devices
10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
RF Frequency (GHz)
Max
Median
Mean
-3sigma
XU1004-BD Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, USB/LSB
LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1680 Devices
RF Return Loss (dB)
0
-5
-10
-15
-20
-25
-30
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
RF Frequency (GHz)
Max
Median
Mean
-3sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 7
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
32.0-45.0 GHz GaAs MMIC
Transmitter
U1004-BD
October 2008 - Rev 16-Oct-08
Mechanical Drawing
0.921
(0.036)
1.621
(0.064)
2.220
(0.087)
2
3
4
1.620
(0.064)
5
0.295
(0.012)
0.646
(0.025)
1
10
9
8
0.921
(0.036)
1.621
(0.064)
2.021
(0.080)
0.0
0.0
7
6
2.421
(0.095)
2.821
(0.111)
3.970
(0.156)
(Note: Engineering designator is 40TX0531)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.013 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.987 mg.
Bond Pad #1 (RF Out) Bond Pad #3 (IF1)
Bond Pad #2 (Vd1)
Bond Pad #4 (Vd2)
Bond Pad #5 (LO)
Bond Pad #6 (Vg4)
Bond Pad #7 (Vg2)
Bond Pad #8 (Vg3)
Bias Arrangement
Bond Pad #7 (IF2)
Bond Pad #8 (Vg1)
Bypass Capacitors - See App Note [2]
Vd1
Vd2
Vd2
Vd1
IF1
IF1
4
3
2
XU1004-BD
5
RF
LO
RF
Vg4
1
10
Vg1
LO
9
IF2
Vg3
8
7
6
Vg2
Vg4
IF2
Vg1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Vg3
Vg2
Page 3 of 7
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
32.0-45.0 GHz GaAs MMIC
Transmitter
U1004-BD
October 2008 - Rev 16-Oct-08
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd(1,2)=4.0V,
Id1=160mA and Id2=145mA. Additionally, a mixer and doubler bias are also required with Vg3=Vg4=-0.5V. Adjusting Vg3 and Vg4 above or
below this value can adversely affect conversion gain, LO/RF isolation and intercept point performance. It is also recommended to use active
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain
correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon
diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying
the positive drain supply.
App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as
possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
Channel
Temperature
Rth
MTTF Hours
FITs
55 deg Celsius
deg Celsius
C/W
E+
E+
75 deg Celsius
deg Celsius
C/W
E+
E+
95 deg Celsius
deg Celsius
C/W
E+
E+
Bias Conditions: Vd1=Vd2=4.0V, Id1=160 mA, Id2=145 mA
Typical Application
RF OUT
37.0-39.5 GHz
XP1005-BD
XU1004-BD
Coupler
Mixer
IF In
2 GHz
X
Buffer
X2
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
Mimix Broadband MMIC-based 32.0-45.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 45 GHz)
Mimix Broadband's 32.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 32.0-45.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 7
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
32.0-45.0 GHz GaAs MMIC
Transmitter
U1004-BD
October 2008 - Rev 16-Oct-08
App Note [3] USB/LSB Selection -
LSB
USB
IF2
For Upper Side Band operation (USB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (180º)
respectively as shown in the diagram,
the USB signal will reside on the
isolated port. The input port must be
loaded with 50 ohms.
For Lower Side Band operation (LSB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (180º)
respectively as shown in the diagram,
the LSB signal will reside on the input
port. The isolated port must be loaded
with 50 ohms.
IF1
An alternate method of Selection of USB or LSB:
USB
LSB
In Phase Combiner
In Phase Combiner
-180º
-180º
IF2
IF1
IF2
IF1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
32.0-45.0 GHz GaAs MMIC
Transmitter
U1004-BD
October 2008 - Rev 16-Oct-08
Device Schematic
Block Diagram
Vd1
Output Amp
RF Out
RF Out
Vd2
IF1
RF In
Mixer
RF
LO Buffer
LO
Doubler
LO In
LO Out
LO Out
LO In
LO
Vg5
Vg1
IF2 Vg3
Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 7
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
32.0-45.0 GHz GaAs MMIC
Transmitter
U1004-BD
October 2008 - Rev 16-Oct-08
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support
or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a
life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside
to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting
surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK
or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting
any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information
please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless
gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a
nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC
(Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's
gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold
ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds
are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Ordering Information
Part Number
Description
XU1004-BD-000V Where “V” is RoHS compliant die packed in vacuum release gel paks
XU1004-BD-EV1
XU1004 die evaluation module
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 7
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.