SLUS556 – FEBRUARY 2003
D
D
D
D
D
D
D
and Li-Pol Cells, No System Processor
Calculations Needed
Reports Cell Temperature, Voltage and
Average Current
High-Accuracy Coulometric Charge and
Discharge Current Integration with
Automatic Offset Cancellation
Requires No Offset Calibration
Programmable Input/Output Port
Internal Time-Base Eliminates External
Crystal Oscillator
Four Automatic Low-Power Operating Modes
– Active: < 100 µA
– Sleep: < 5 µA
– Ship: < 2 µA
– Hibernate: < 500 nA
Small 8-Pin TSSOP Package
APPLICATIONS
D PDAs
D Smart Phones
D MP3 Players
D Digital Cameras
D Internet Appliances
D Handheld Devices
DESCRIPTION
TYPICAL APPLICATION
UDG–03038
PACK+
+
C4
0.1 µF
Li-Ion
or
Li-Pol
bqJUNIOR
1
RBI
GPIO
8
R2
100 kΩ
2
VCC
SRP
7
3
VSS
SRN
6
4
HDQ
BAT
5
C3
0.1 µF
C1
0.1 µF
R1
0.02Ω
HDQ
Protection
Controller
R3
100 kΩ
The bqJUNIOR series are highly accurate
standalone single-cell Li-Ion and Li-Pol battery
capacity monitoring and reporting devices
targeted at space limited portable applications.
The device monitors a voltage drop across a small
current sense resistor connected in series with the
battery to determine charge and discharge activity
of the battery. Compensations for battery
temperature, self–discharge, and rate of
discharge are applied to the charge counter to
provide available time-to-empty and time-to-full
information across a wide range of operating
conditions. Battery capacity is automatically
recalibrated, or learned, in the course of a
discharge cycle from full to empty. Internal
registers include available time-to-empty, cell
temperature and voltage, average current, and
other status and control registers.
The bqJUNIOR can operate directly from
single-cell Li-Ion and Li-Pol batteries and
communicates to the system over a simple
one-wire bi-directional serial interface. The
5-kbits/s
HDQ
bus
interfaces
reduces
communications overhead in the external
microcontroller.
C2
0.1 µF
PACK–
Battery Pack
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2003, Texas Instruments Incorporated
!"#$%&' #! (#!()$!* +$#,-('* ! '.) "#$%&' /) #$
,)* 0! +.&*) #" ,)/)1#+%)!'2 .&$&(')$ *' ( ,&'& &!, #'.)$
*+)( " (&' #!* &$) ,)* 0! 0#&1*2 )3&* !*'$-%)!'* $)*)$/)* '.) $ 0.' '#
(.&!0) #$ , *(#!' !-) '.)*) +$#,-('* 4 '.#-' !#' ()2
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1
PRODUCT PREVIEW
FEATURES
D Reports Accurate Time-to-Empty in Li-Ion
SLUS556 – FEBRUARY 2003
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1) (2)
bq27000
bq27010
Supply voltage range, VCC (all with respect to VSS)
–0.3 V to 7.0 V
Input voltage range at SRP, SRN, RBI, and BAT (all with respect to VSS)
Inp t voltage
Input
oltage
–0.3 V to VCC + 0.3 V
HDQ, GPIO (with respect to VSS)
–0.3 V to 7.0 V
GPIO (with respect to VSS) during EEPROM programming only
–0.3 V to 22.0 V
Output sink current at GPIO, HDQ
5 mA
Operating free-air temperature range, TA
–20°C to 70°C
Storage temperature range, Tstg
–65°C to 150°C
Junction temperature range, TJ
–40°C to 125°C
PRODUCT PREVIEW
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300°C
(1) Stresses beyond those listed under ”absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated under ”recommended operating conditions” is
not implied. Exposure to Absolute Maximum Rated conditions for extended periods may affect device reliability
RECOMMENDED OPERATING CONDITIONS
MAX
UNIT
Supply voltage, VCC
MIN
2.6
NOM
4.5
V
Operating free-air temperature, TJ
–20
70
°C
MAX
UNIT
ELECTRICAL CHARACTERISTICS
TJ = –20°C to 70°C, TJ = TA, 2.6 V ≤ VCC ≤ 4.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
INPUT CURRENTS
ICC(VCC)
ICC(SLP)
Input current, VCC
Sleep current
5
ICC(SHP)
ICC(POR)
Ship current
2
Hibernate current
0 V < VCC < V(POR)
EEPROM programming current
VPROGRAM = 21 V
RBI pin only,
VCC < V(POR)
RBI current
V(POR)
VCC > VCC(min)
100
POR threshold
2.0
RBI data retention voltage
1.2
Input impedance on BAT pin
10
Input impedance on SRR, SRN pins
10
µA
500
nA
15
mA
20
nA
2.5
V
MΩ
VOLTAGE MEASUREMENT
Measurement range
VCC = VI(BAT)
2.6
Reported voltage resolution
4.5
V
2.7
Reported accuracy
–25
Voltage update time
25
2
mV
s
VOLTAGE MEASUREMENT
Reported temperature resolution
0.25
Reported temperature accuracy
–3
Temperature update time
2
3
2
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°K
s
SLUS556 – FEBRUARY 2003
ELECTRICAL CHARACTERISTICS (continued)
TJ = –20°C to 70°C, TJ = TA, 2.6 V ≤ VCC ≤ 4.5 V (unless otherwise noted)
TEST CONDITIONS
PARAMETER
MIN
TYP
MAX
UNIT
EEPROM PROGRAMMING VOLTAGE
tRISE
tFALL
Programming voltage rise time
0.5
1.5
Programming voltage high time
10
100
Programming voltage fall time
0.5
1.5
Applied to GPIO pin
20
22
VCC < 4.2 V
VCC > 4.2 V
1.7
Programming voltage
ms
V
IO PORT (GPIO) AND SERIAL INTERFACE (HDQ)
VIH
High le el inp
High-level
inputt voltage
oltage
VIL
IOL
Low-level input voltage
1.9
V
0.7
Low-level output current
VOL > 0.4 V
1
mA
STANDARD SERIAL COMMUNICATION (HDQ) TIMING(1)
T(B)
T(BR)
Break timing
190
T(CYCH)
T(HW1)
Host bit window timing
Host sends 1 time
5
50
T(HW0)
T(RSPS)
Host sends 0 time
100
145
bq27000 to host response time
190
320
T(CYCB)
T(DW1)
bq27000 bit window timing
190
250
40
190
bq27000 sends 1 time
32
50
T(DW0)
bq27000 sends 0 time
(1) See Figure 1.
80
145
µs
The following timing diagrams describe break and break recovery timing (a), host transmitted bit timing (b),
bqJUNIOR transmitted bit timing (c), and bqJUNIOR to host response timing (d).
(a)
t(BR)
t(B)
(b)
(c)
t(HW1)
t(DW1)
t(DW1)
t(HW0)
t(CYCH)
t(CYCD)
(d)
Break
7–Bit Address
1–bit
8–Bit Data
R/W
t(RSPS)
UDG–03039
Figure 1. HDQ Bit Timing Diagrams
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3
PRODUCT PREVIEW
Break recovery time
SLUS556 – FEBRUARY 2003
PIN ASSIGNMENTS
TERMINAL
NAME
NO.
I/O
DESCRIPTION
BAT
5
I
GPIO
8
I/O
Battery voltage sense input
General-purpose input/output port
HDQ
4
I/O
Single-wire HDQ serial interface
RBI
1
I
Register back-up input
SRN
6
I
Current sense input (positive)
SRP
7
I
Current sense input (negative)
VCC
2
I
VSS
3
I
VCC supply input
Ground input
PRODUCT PREVIEW
PW PACKAGE
(TOP VIEW)
RBI
VCC
VSS
HDQ
1
2
3
4
8
7
6
5
GPIO
SRP
SRN
BAT
AVAILABLE OPTIONS
TA
ADDITIONAL FUNCTIONS
PACKAGED
DEVICES
TTECP, AP, SAE, MLTTE, MLI,
STTE, SI, ARTTE, and AR
bq27000PW
20 C to 70°C
70 C
–20°C
MARKINGS
bq27010PW
† The PW package is available taped and reeled. Add R suffix to device type (e.g. bq27000PWR)
to order quantities of 2,000 devices per reel.
4
www.ti.com
SLUS556 – FEBRUARY 2003
VCC 2
Bandgap
Reference and
Bias
Temperature
Compensated
Precision Oscillator
Clock
Generator
4 HDQ
EEPROM
System I/O
and Control
8 GPIO
SCPU
SRP 7
Temperature
Sensor
RAM
1 RBI
3 VSS
ADC
BAT 5
UDG–03040
Figure 2. Functional Block Diagram
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5
PRODUCT PREVIEW
SRN 6
Autocalibration and
Autocompensating
VFC
MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
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