TYSEMI 1N4148

Product specification
1N4148
Features
Fast switching diode
DO34
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Reverse voltage
VR
75
V
Peak reverse voltage
VRM
100
V
IF
200
mA
Io
150
mA
Surge Forward Current at t < 1 s and Tj = 25
IFSM
500
mA
Power Dissipation at Tamb = 25
Ptot
500
mW
Forward DC current at Tamb = 25
*
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25
and f
50 Hz
*
*
Junction Temperature
Storage Temperature Range
Tj
175
Tstg
-65 to +175
* Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Leakage current
IR
Reverse Breakdown Voltage
V(BR)R
Testconditons
Min
Max
Unit
IF=10mA
1
V
VR = 20 V
25
nA
VR = 75 V
5
ìA
VR = 20 V, Tj = 150
50
ìA
IR = 100ìA
100
IR = 5.0ìA
75
Capacitance
Ctot
VF = VR = 0
Voltage rise when switching ON
tested with 50 mA forward pulses
Vfr
tp = 0.1 ìs, Rise Time < 30 ns, fp = 5 to
100 kHz
Reverse recovery time
trr
IF = 10 mA IR = 1 mA, VR = 6 V, RL =
100 Ù
Thermal resistance junction to ambient air *
Rectification efficiency
Typ
RthJA
çv
V
4
pF
2.5
V
4
ns
0.35 K/mW
f = 100 MHz, VRF = 2 V
0.45
* Valid provided that electrodes are kept at ambient temperature.
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