Product specification 2SB792,2SB792A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low noise voltage NV 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol 2SB792 Rating VCBO 2SB792A Collector-emitter voltage 2SB792 VCEO 2SB792A 2.Emitter 3.collector Unit -150 V -185 V -150 V -185 V VEBO -5 V Collector current IC -50 mA Peak collector current ICP -100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Emitter-base voltage 1.Base Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Symbol 2SB792 Testconditons Min IC = -100 ìA, IB = 0 VCEO 2SB792A Emitter-base voltage Collector-base cutoff current Forward current transfer ratio 2SB792 VEBO IE = -10 ìA, IC = 0 ICBO VCB = -100 V, IE = 0 hFE VCE = -5 V, IC = -10 mA -150 V V -5 V 130 450 130 330 Collector output capacitance Noise voltage -1 VCE = -10 V, IC = -10 mA, f = 200 MHz fT Cob VCB = -10 V, IE = 0, f = 1 MHz NV VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100KÙ, Function = FLAT Unit -185 VCE(sat) IC = -30 mA, IB = -3 mA Transition frequency Max -1 2SB792A Collector-emitter saturation voltage Typ ìA V 200 MHz 4 pF 150 mV hFE Classification 2SB792 IR IS 2SB792A 2FR 2FS Rank R S T hFE 130 220 185 330 260 450 Marking http://www.twtysemi.com [email protected] IT 4008-318-123 1 of 1