Transistors SMD Type Product specification FZT951 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 Excellent gain characteristics specified up to 10 Amps. 4 Ptot = 3 watts. FZT951 exhibts extremely low equivalent on resistance; RCE(sat) 55mÙ at 4A. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -6 V Continuous collector current ICM -15 A Peak pulse current IC -5 A Power dissipation Ptot 3 W Tj,Tstg -55 to +150 Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FZT951 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -100 -140 Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -60 -90 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -6 -8 V Collector Cut-Off Current ICBO VCB=-80V VCB=-80V,Ta = 100 Emitter Cut-Off Current IEBO VEB=-6V IC=-100mA, IB=-10mA IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-5A, IB=-500mA Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) IC=-5A, IB=-500mA Base-emitter ON voltage * VBE(on) IC=-5A, VCE=-1V Static Forward Current Transfer Ratio* Transitional frequency hFE fT V -50 1 nA ìA -10 nA -50 -140 -210 -460 mV -1080 -1240 mV -935 -1070 mV -20 -85 -155 -137 IC=-10mA, VCE=-1V* 100 200 IC=-2A, VCE=-1V* 100 200 IC=-5A, VCE=-1V* 75 90 IC=-10A, VCE=-1V* 10 25 300 IC=-100mA, VCE=-10V, f=50MHz 120 MHz Output capacitance Cobo VCB=-10V, f=1MHz 74 pF Turn-on time t(on) IC=-2A, VCC=-10V 82 ns Turn-off time t(off) IB1=IB2=-200mA 350 ns * Pulse test: tp = 300 ìs; d 0.02. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2