TYSEMI FMMTL717

Transistors
IC
SMD Type
Product specification
FMMTL717
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A.
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-12
V
Collector-emitter voltage
VCEO
-12
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1.25
A
Peak pulse current
ICM
-4
A
IB
-200
mA
Ptot
-500
mW
Tj,Tstg
-55 to +150
Base current
Power dissipation
Operating and storage temperature range
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
FMMTL717
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100ìA
-12
-35
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA*
-12
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100ìA
-5
-8.5
V
Collector-base cut-off current
ICBO
Emitter-base current
IEBO
VCB=-10V
-10
nA
VEB=-4V
-10
nA
-40
-140
-240
-290
mV
-24
-94
-160
-200
Collector-emitter saturation voltage
IC=-100mA, IB=-10mA*
I
VCE(sat) C=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
IC=-1.25A,IB=-50mA
Base-emitter saturation voltage
VBE(sat) IC=-1.25A, IB=-50mA*
-970 -1100
mV
VBE(on) IC=-1.25A, VCE=-2V*
-875
mV
Base-emitter ON voltage
DC current gain
hFE
Current-gain-bandwidth product
fT
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
300
300
180
100
50
-1000
490
450
275
180
110
IC=-50mA, VCE=-10V f=100MHz
205
MHz
Output capacitance
Cobo
VCB=-10V, f=1MHz
15
Turn-on time
t(on)
IC=-1A, VCC=-10V
76
ns
Turn-off time
t(off)
IB1=IB2=-10mA
149
ns
* Pulse test: tp
300 ìs; d
20
pF
0.02.
Marking
Marking
L77
http://www.twtysemi.com
[email protected]com
4008-318-123
2 of 2