Product specification MMBD5817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Power Dissipation: PD = 300mW 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Collector Current: IF = 1A +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Collector-Base Voltage: VR = 20V 3.collector PIN Array Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector Current Parameter IF 1 A Collector-Base Voltage VR 20 V PD 300 mW Tj,TSTG -55 to +150 Power Dissipation Operating and Storage Junction Temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Reverse Breakdown Voltage V(BR)R Forward Voltage (pulse test) VF Reverse Voltage Leakage Current Diode Capacitance IR CD Testconditons IR = 1mA Min Typ Max 20 V IF = 1A 0.45 IF = 3A 0.75 VR = 20V 1 VR = 40V 1 VR = 0, f = 1.0MHz Unit 120 V A pF Marking Marking SJ http://www.twtysemi.com [email protected] 4008-318-123 1 of 1