Product specification KI2300(SI2300) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 @VGS=2.5V,ID=4.0A +0.1 1.3-0.1 VDS=20V,RDS(ON)=60m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A 0.4 3 VDS=20V,RDS(ON)=40m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS Drain-Current -Continuous * TJ=125 -Pulsed Power Dissipation * Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range 10 V ID 3.8 A IDM 15 A W PD 1.25 RthJA 100 Tj.Tstg -55 to 150 /W * Surface Mounted on FR 4 Board ,t 10 sec. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC SMD Type Product specification KI2300(SI2300) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage VDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 uA Gate-Body Leakage IGSS VGS= 100 nA Gate Threshold Voltage * VGS(th) Drain- Source on-state Resistance * 20 10V,VDS=0V 0.78 1.5 VGS=4.5V,ID=5.0A VGS=VDS,ID=250uA 0.6 32 40 m RDS(ON) VGS=2.5V,ID=4.0A 50 60 m 62 75 m VGS=1.8V,ID=1.0A On-State Drain Current * ID(ON) Forward Transconductance * V gFS VDS=5V,VGS=4.5V 18 VDS=5V,ID=5A 5 V A S Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 115 pF Turn-On Delay Time tD(on) 31.8 ns 14.5 ns Rise Time tr Turn-Off Delay Time tD(off) Fall Time Total Gate Charge pF ns 31.9 ns Qg 16.8 nC 2.5 nC 5.4 nC Qgs Qgd VDS = 10V, ID = 3.5A,VGS = 4.5V IS Diode Forward Voltage http://www.twtysemi.com 144 50.3 Gate-S ource Charge * Pulse Test:Pulse Width 300 VDD=10V,ID=1A,VGS=4.5V,RL=10 ,RGEN=6 pF tf Gate-Drain Charge Drain-Source Diode Forward Current * VDS = 15V, VGS = 0V,f =1.0MHZ 888 VSD VGS=0V,IS=1.25A 0.825 1.25 A 1.2 V ,Duty Cycle 2% [email protected] 4008-318-123 2 of 2