A-POWER AP4436GM

AP4436GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
D
D
▼ Capable of 2.5V gate drive
D
D
▼ Surface mount package
S
S
20V
RDS(ON)
32mΩ
ID
G
SO-8
BVDSS
6.4A
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
[email protected]=25℃
3
Continuous Drain Current ,VGS @ 4.5V
6.4
A
[email protected]=70℃
Continuous Drain Current ,VGS @ 4.5V
5.1
A
30
A
2
W
3
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
200805271
AP4436GM
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=6A
-
-
32
mΩ
VGS=2.5V, ID=4A
-
-
48
mΩ
0.5
-
1.5
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=4A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=4A
-
10
27
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.2
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
17
-
ns
tf
Fall Time
RD=10Ω
-
5.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
1000
pF
Coss
Output Capacitance
VDS=20V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=2.1A, VGS=0V
2
Max. Units
1.2
V
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4436GM
40
40
5.0V
4.5 V
3.5 V
2.5 V
ID , Drain Current (A)
30
V G =2.0V
20
10
30
V G = 2.0 V
20
10
0
0
0
1
2
3
4
0
5
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.8
I D =6A
V G = 4.5V
ID=4A
T A =25 o C
1.6
Normalized RDS(ON)
40
RDS(ON) (mΩ)
5.0V
4.5 V
3.5 V
2.5 V
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
30
1.4
1.2
1.0
20
0.8
10
0.6
0
2
4
6
8
10
-50
8
1.2
Normalized VGS(th) (V)
1.4
IS(A)
100
150
Fig 4. Normalized On-Resistance
v.s. Temperature
10
T j =150 o C
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
6
0
o
V GS , Gate-to-Source Voltage (V)
T j =25 o C
4
2
1.0
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4436GM
f=1.0MHz
800
8
ID=4A
600
C oss
V DS = 16 V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
400
4
200
2
C oss
C rss
0
0
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
1ms
ID (A)
9
V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4436GM
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5