AP9962AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
40V
RDS(ON)
20mΩ
ID
G
32A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power
applications and suited for low voltage applications such as DC/DC
converters.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
32
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
20
A
120
A
27.8
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
4.5
℃/W
62
℃/W
1
200810282
AP9962AGP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=20A
-
-
20
mΩ
VGS=4.5V, ID=16A
-
-
30
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
40
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=20A
-
12
20
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.8
-
nC
VDS=20V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=1.0Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
820
1800
pF
Coss
Output Capacitance
VDS=25V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Min.
Typ.
IS=32A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
19
-
ns
dI/dt=100A/µs
-
13
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9962AGP-HF
100
80
10 V
7.0 V
o
T C = 25 C
10V
7.0V
T C = 1 50 o C
ID , Drain Current (A)
ID , Drain Current (A)
80
5.0 V
60
4.5 V
40
.
5.0V
60
4.5V
40
V G = 3.0 V
20
20
V G = 3.0 V
0
0
0
1
2
3
4
0
5
Fig 1. Typical Output Characteristics
3
4
5
6
2.0
I D =16A
I D =20A
V G =10V
Normalized RDS(ON)
T C =25 o C
26
RDS(ON) (mΩ)
2
Fig 2. Typical Output Characteristics
30
22
18
1.6
1.2
0.8
14
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
16
12
T j =150 o C
IS(A)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
T j =25 o C
8
4
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9962AGP-HF
f=1.0MHz
12
1000
800
V DS = 20 V
V DS = 24 V
V DS = 32 V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 20 A
10
6
600
400
4
200
2
C oss
C rss
0
0
0
4
8
12
16
20
24
28
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
10
100us
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
100
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4