A-POWER AP9963AGP-HF

AP9963AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
40V
RDS(ON)
4.2mΩ
ID
G
155A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current (Chip)
[email protected]=25℃
[email protected]=100℃
155
A
3
80
A
3
80
A
320
A
187
W
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201010291
AP9963AGP-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=60A
-
-
4.2
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=60A
-
90
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=40A
-
58
93
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
26
-
nC
VDS=20V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=40A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
2600 4160
pF
Coss
Output Capacitance
VDS=25V
-
600
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
260
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
43
-
ns
dI/dt=100A/µs
-
54
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9963AGP-HF
300
200
10V
8.0V
7.0V
6.0V
ID , Drain Current (A)
250
200
150
V G = 5.0V
100
T C =175 o C
160
ID , Drain Current (A)
T C =25 o C
10V
8.0V
7.0V
6.0V
V G =5.0V
120
80
40
50
0
0
0.0
4.0
8.0
12.0
16.0
20.0
0.0
4.0
V DS , Drain-to-Source Voltage (V)
8.0
12.0
16.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.6
I D =60A
V G =10V
I D =1mA
Normalized RDS(ON)
Normalized BVDSS (V)
1.4
1.2
1
0.8
1.4
0.8
0.6
0.4
0.2
-50
0
50
100
150
200
-50
0
o
50
100
150
200
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
1.6
40
Normalized VGS(th) (V)
I D =1mA
IS(A)
30
T j =175 o C
T j =25 o C
20
1.2
0.8
0.4
10
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9963AGP-HF
f=1.0MHz
12
4000
I D =40A
V DS =32V
VGS , Gate to Source Voltage (V)
10
3000
C iss
C (pF)
8
6
2000
4
1000
C oss
C rss
2
0
0
0
20
40
60
80
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Operation in this area
limited by RDS(ON)
100us
ID (A)
100
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4