EMD9 dual digital transistors (NPN+ PNP) SOT-563 FEATURES Two DTA114Y and DTC114Y transistors are built-in a package 1 Marking: D9 Equivalent circuit DTr1 Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -6~+40 V IO 70 IC(MAX) 100 Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Symbol Min VI(off) VI(on) 1.4 0.1 VO(on) II IO(off) DC current gain GI 68 Input resistance R1 7 Resistance ratio R2/R1 3.7 fT Max 0.3 Output current Transition frequency Typ Unit V 0.3 V 0.88 mA 0.5 μA Conditions VCC=5V ,IO=100μA VO=0.3V ,IO=1mA IO=5mA, II=0.25mA VI=5V VCC=50V, VI=0 VO=5V ,IO=5mA 10 13 4.7 5.7 250 KΩ MHz VO=10V ,IO=5mA,f=100MHz 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 EMD9 DTr2 Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC -50 V Input voltage VIN -40~+6 V IO -70 IC(MAX) -100 Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Symbol Min VI(off) VI(on) -1.4 -0.1 VO(on) II IO(off) DC current gain GI 68 Input resistance R1 7 Resistance ratio R2/R1 3.7 fT Max -0.3 Output current Transition frequency Typ Unit V Conditions VCC=-5V ,IO=-100μA VO=-0.3V ,IO=-1mA -0.3 V IO=-5mA,II=-0.25mA -0.88 mA VI=-5V -0.5 μA VCC=-50V, VI=0 VO=-5V ,IO=-5mA 10 13 4.7 5.7 250 KΩ MHz VO=-10V ,IO=-5mA,f=100MHz 2 JinYu semiconductor www.htsemi.com Date:2011/ 05