ESD5Z03T1-ESD5Z36T1 Single Line TVS Diode For ESD Protection Portable Electronics Voltage:3~36 Volts Power:120 Watts Features SOD523 120 Watts peak pules power( tp=8/20µs) Small package for use in portable electronics Suitable replacement for MLV’S in ESD protection applications Low clamping voltage and leakage current Pb free product are available : 99% Sn above can meet RoHS environment substance directive request Applications Case: SOD-523 plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.0014 grams Marking : ESD5Z03T1 : KD ESD5Z05T1 : KE ESD5Z08T1 : KR Dimensions in inches and (millimeters) ESD5Z12T1 : LE ESD5Z15T1 : LM ESD5Z24T1 : LZ ESD5Z36T1: MP MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Symbol Value Units PP K 120 W VE S D 25 KV TJ -50O C to 150 O C O C TS T G -50O C to 150 O C O C Peak Pulse Power (tp=8/20 µs) ESD Voltage Operating Temperature Storage Temperature ELECTRICAL CHARA CTERISTICS ESD5Z 03T1 Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 3.3 V VB R IB R =1mA 4 - - V Reverse Leakage Current IR VR =3.3V - - 125 µA Clamping Voltage(8/20 µs) VC IP P =1A - - 7 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - 180 - pF Off State Junction Capacitance CJ 3Vdc Bias=f=1MHz - 100 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage http://www.luguang.cn mail:[email protected] ESD5Z03T1-ESD5Z36T1 Single Line TVS Diode For ESD Protection Portable Electronics ESD5Z 05T1 Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 5 V VB R IB R =1mA 6 - - V Reverse Leakage Current IR VR =5V - - 10 µA Clamping Voltage(8/20 µs) VC IP P =1A - - 9 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - 110 - pF Off State Junction Capacitance CJ 5Vdc Bias=f=1MHz - 65 - pF Symbol Conditions Min. Typical Max. Units VR W M - - - 8 V VB R IB R =1mA 8.5 - - V Reverse Leakage Current IR VR =8V - - 10 µA Clamping Voltage(8/20 µs) VC IP P =1A - - 13.4 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - 70 - pF Off State Junction Capacitance CJ 8Vdc Bias=f=1MHz - 40 - pF Symbol Conditions Min. Typical Max. Units VR W M - - - 12 V VB R IB R =1mA 13.3 - - V Reverse Leakage Current IR VR =12V - 0.01 µA Clamping Voltage(8/20 µs) VC IP P =1A - - 19 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - 45 - pF Off State Junction Capacitance CJ 12Vdc Bias=f=1MHz - 30 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage ESD5Z 08T1 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage ESD5Z 12T1 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage - ESD5Z 15T1 Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 15 V VB R IB R =1mA 16.7 - - V Reverse Leakage Current IR VR =15V - - 0.01 µA Clamping Voltage(8/20 µs) VC IP P =1A - - 23 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - 35 - pF Off State Junction Capacitance CJ 15Vdc Bias=f=1MHz - 20 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage http://www.luguang.cn mail:[email protected] ESD5Z03T1-ESD5Z36T1 Single Line TVS Diode For ESD Protection Portable Electronics ESD5Z 24T1 Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 24 V VB R IB R =1mA 26.7 - - V Reverse Leakage Current IR VR =24V - Clamping Voltage(8/20 µs) VC IP P =1A - Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz Off State Junction Capacitance CJ 24Vdc Bias=f=1MHz Reverse Stand-Off Voltage Reverse Breakdown Voltage 0.01 µA - 36 V - 23 - pF - 14 - pF - ESD5Z 36T1 Parameter Symbol Conditions Min. Typical Max. Units VR W M - - - 36 V VB R IB R =1mA 40 - - V Reverse Leakage Current IR VR =36V - 0.01 µA Clamping Voltage(8/20 µs) VC IP P =1A - - 60 V Off State Junction Capacitance CJ 0Vdc Bias=f=1MHz - 17 - pF Off State Junction Capacitance CJ 36Vdc Bias=f=1MHz - 12 - pF Reverse Stand-Off Voltage Reverse Breakdown Voltage http://www.luguang.cn - mail:[email protected] ESD5Z03T1-ESD5Z36T1 100 120 tf %Of Rated Power WAVEFORM PARAMETERS m 80 e -t m 60 40 80 60 40 20 t d=t I PP/2 20 0 0 5 10 15 20 25 Average Power 0 25 50 75 100 O T L-Lead Temperature- C FIG. 2-Power Derating Curve FIG. 1- Pulse Wave Form 10000 1000 320W,8/20 m s Waveform 100 10 0.01 10 1 100 1000 10000 t d-Pulse Duration- m s FIG. 3-Peak Pulse Power vs Pulse Time 400 300 200 100 0 0 125 150 30 T-Time- m s P PP-Peak Pulse Current-Watts 0 Peak Pulse Power 8/20 m s Peak Value I PP TEST 100 C-Ca pacit ance -pF I PP-Peak Pulse Current-% of I PP Single Line TVS Diode For ESD Protection Portable Electronics 1 2 3 5 4 6 V R=Reverse Voltage-Volts FIG. 4-Typical Reverse Voltage vs Capacitance http://www.luguang.cn mail:[email protected]