AO4478 30V N-Channel MOSFET General Description The AO4478 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications. Features VDS (V) = 30V ID = 9A (VGS = 10V) RDS(ON) <19mΩ (VGS = 10V) RDS(ON) <26mΩ (VGS = 4.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current TA=70°C Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mHC TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Lead 1/6 C ±25 V ID 7.0 IDM 60 Iar Ear 17 14 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Units V 9.0 C Power DissipationB Maximum 30 mJ W 2.0 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4478 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 60 VGS=10V, ID=9A TJ=125°C VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V 100 nA 1.6 2 V 16 19 25 30 21 26 mΩ 1 V 4 A 560 pF A VGS=0V, VDS=0V, f=1MHz mΩ 24 0.70 466 VGS=0V, VDS=15V, f=1MHz uA 5 VGS(th) gFS Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ S 90 pF 61 pF 3.7 Ω 5.6 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.3 11 nC Qg(4.5V) Total Gate Charge 4.3 5.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, ID=9A 1 nC 2.3 nC 5 ns VGS=10V, VDS=15V, RL=1.65Ω, RGEN=3Ω 8 ns 20 ns 5 ns IF=9A, dI/dt=500A/µs 7.5 Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs 9.8 9 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. Rev1: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AO4478 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 70 VDS= 5V 7V 60 25 10V 4.5V 20 40 ID(A) ID (A) 50 4V 30 15 125°C 10 20 25°C VGS= 3V 10 5 2.5V 0 0 0 1 2 3 4 5 0 1 2.0 35 1.8 RDS(ON) (mΩ ) Normalized On-Resistance 40 30 VGS=4.5V 25 20 15 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics(Note E) VDS (Volts) Figure 1: On-Region Characteristics(Note E) VGS=10V 10 5 1.6 VGS=4.5V ID=8A 1.4 1.2 VGS=10V ID=9A 1.0 0.8 0.6 0 5 10 15 20 25 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 1E+01 70 60 1E+00 50 1E-01 IS (A) RDS(ON) (mΩ ) ID=9A 40 125°C 1E-02 25°C 125°C 30 1E-03 25°C 20 1E-04 10 2 3/6 3 4 5 6 7 8 9 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) 10 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) www.freescale.net.cn AO4478 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VGS (Volts) Capacitance (pF) VDS=15V ID=9A 8 6 4 600 Ciss 400 Coss 200 2 0 Crss 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 RDS(ON) limited TA=25°C 100 10µs TA=25°C ID (Amps) ID(A), Peak Avalanche Current 15 1000 50 40 30 10 VDS (Volts) Figure 8: Capacitance Characteristics 70 60 5 TA=150°C TA=150°C TA=100°C 10 100µs 1 1ms 10ms 100ms TA=125°C 20 TJ(Max)=150°C TA=25°C 0.1 10s DC 10 0.01 0 0.000001 0.1 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 1000 Power (W) TJ(Max)=150°C TA=25°C 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4478 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4478 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn