Freescale AO48 22/ MC48 22 Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 13.5 @ VGS = 10V 30 20 @ VGS = 4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology Pulsed Drain Current TA=25oC a o TA=70 C b a Continuous Source Current (Diode Conduction) 8 2 7 3 6 4 5 TA=25 C o TA=70 C ±50 IS 2.3 a Maximum Junction-to-Case Maximum Junction-to-Ambienta Symbol t <= 5 sec t <= 5 sec RθJC RθJA A A 2.1 PD W 1.3 TJ, Tstg THERMAL RESISTANCE RATINGS Parameter V 8.2 IDM Operating Junction and Storage Temperature Range Units 10 ID o Power Dissipationa 8 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage ±20 VGS Continuous Drain Current ID (A) 10 o C -55 to 150 Maximum 40 60 Units o C/W C/W o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Freescale AO48 22/ MC48 22 SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 uA VDS = VGS, ID = 250 uA Min Limits Unit Typ Max Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) A rDS(on) Drain-Source On-Resistance 30 1 V VDS = 0 V, VGS = 20 V ±100 nA VDS = 24 V, VGS = 0 V 1 25 uA o VDS = 24 V, VGS = 0 V, TJ = 55 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A 20 A 13.5 20 o VGS = 10 V, ID = 15 A, TJ = 55 C A Forward Tranconductance Diode Forward Voltage Pulsed Source Current (Body Diode) A gfs VSD VDS = 15 V, ID = 10 A IS = 2.3 A, VGS = 0 V ISM mΩ 15 40 0.7 5 S V A b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf VDS = 15 V, VGS = 5 V, ID = 10 A VDD = 25 V, RL = 25 Ω , ID = 1 A, VGEN = 10 V 20 7.0 7.0 20 9 70 20 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. FREESCALE reserves the right to make changes without fu rther notice to any products herein. FREESCALE makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer. 2 www.freescale.net.cn Freescale AO48 22/ MC48 22 ID, DRAIN CURRENT (A) 50 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Typical Electrical Characteristics (N-Channel) VGS = 10V 6.0V 40 4.0V 30 20 3.0V 10 0 0 0.5 1 1.5 2 2 1.7 1.4 4.5V 6.0V 1.1 10V 0.8 0.5 0 VDS, DRAIN-SOURCE VOLTAGE (V) 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance with Drain Current 1.6 ID = 10A RDS(ON), ON-Resistance (OHM ) Normalized RDS(on) 0.05 VGS = 10V I D = 10A 1.4 1.2 1.0 0 .8 0 .6 -50 -2 5 0 25 50 75 10 0 12 5 150 0.04 0.03 0.02 o T A = 25 C 0.01 0 2 T J Juncat ion T emperature (C) 4 6 8 10 VGS, Gate To Source Voltage (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate to Source Voltage 60 VD=5V 100 -55C IS, REVERSE DRAIN CURRENT (A) I D Drain Current (A) 50 25C 40 30 125C 20 10 0 0 1 2 3 4 5 6 VGS = 0V 10 o TA = 125 C 1 0.1 o 25 C 0.01 0.001 0.0001 VGS Ga te to S o urc e Vo lta ge (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3 www.freescale.net.cn Freescale AO48 22/ MC48 22 10 1600 ID=10a CAPACITANCE (pF) 8 6 4 f = 1MHz VGS = 0 V Ciss 1200 800 Coss 400 Crss 2 0 0 0 0 4 8 12 16 20 24 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, Gate Charge (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 50 2.4 SINGLE PULSE RqJA = 125C/W TA = 25C VDS = VGS 2.2 P(pk), Peak Transient Power (W) Vth, Gate-Source Thresthold Voltage (V) Vgs Gate to Source Voltage ( V ) Typical Electrical Characteristics (N-Channel) ID = 250mA 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 o TA, AMBIENT TEMPERATURE ( C) 40 30 20 10 0 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 9. Threshold Vs Ambient Temperature Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 125 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Square Wave Pulse Duration (S) Figure 11. Transient Thermal Response Curve 4 www.freescale.net.cn Freescale AO48 22/ MC48 22 Package Information SO-8: 8LEAD H x 45° 5 www.freescale.net.cn Freescale AO48 22/ MC48 22 Ordering information • AM4910N-T1-XX – – – – – – A: M: 4910: N: T1: XX: Analog Power MOSFET Part number N-Channel Tape & reel Blank: Standard PF: Leadfree 6 www.freescale.net.cn