AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Features VDS (V) = -38V ID = -85A RDS(ON) < 8.5mΩ (VGS = -20V) RDS(ON) < 10mΩ (VGS = -10V) Ultra SO-8TM Top View D D Bottom tab connected to drain G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current G ID IDM C 2.08 W 1.3 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM Junction and Storage Temperature Range 1/6 -10 100 PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B A -120 IDSM TC=25°C TA=70°C V -12 TA=70°C Power Dissipation A ±25 -62 TA=25°C TC=100°C Units V -85 TC=100°C Power Dissipation B Maximum -38 RθJA RθJC Typ 21 48 1 Max 25 60 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AOL1401 P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -38 -100 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -120 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VDS=0V, VGS=±25V VGS=-20V, ID=-20A TJ=125°C VGS=-10V, ID=-20A Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qgs Gate Source Charge -500 VDS=0V, VGS=±20V gFS Max -2.2 ±1 µA ±10 µA -3.5 VGS=-10V, VDS=-20V, ID=-20A V 6.8 8.5 9.1 11 7.9 10 mΩ -1 V 14.5 A 4560 pF 50 0.71 mΩ S 560 pF 350 VGS=0V, VDS=0V, f=1MHz nA A 3800 VGS=0V, VDS=-20V, f=1MHz Units V VDS=-30V, VGS=0V IDSS IS Typ pF 7.5 9 61.2 74 Ω nC 11.88 nC Qgd Gate Drain Charge 15.4 nC tD(on) Turn-On DelayTime 13.5 ns tr Turn-On Rise Time 17 ns tD(off) Turn-Off DelayTime 97 ns tf Turn-Off Fall Time 43 ns VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 29 36 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev 2: Dec 2008 2/6 www.freescale.net.cn AOL1401 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 -14V -10V VDS=-5V 25 90 20 -ID(A) -ID (A) -6V 60 125°C 15 10 -4V 25°C 30 5 Vgs=-3.5V 0 0 0 1 2 3 4 5 2 2.5 -VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 9 1.8 Normalized On-Resistance RDS(ON) (mΩ) 3 VGS=-10V 8 7 VGS=-20V 1.6 VGS=-20V ID=-20A 1.4 1.2 VGS=-10V ID=-20A 1 6 0 5 0.8 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 30 60 90 120 150 180 210 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 30 ID=-20A 1.0E+00 25 1.0E-01 125°C -IS (A) RDS(ON) (mΩ) 20 15 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 10 25°C 1.0E-05 5 1.0E-06 0 0.0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 4.9 6 www.freescale.net.cn AOL1401 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 4000 Capacitance (pF) -VGS (Volts) Ciss VDS=-20V ID=-20A 8 6 4 3000 2000 Coss Crss 1000 2 0 0 0 10 20 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 70 1000.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TJ(Max)=175°C, TA=25°C RDS(ON) limited 100µs 1ms 10.0 10ms 1.0 DC 100m 0.1 0.1 1 10 100 -VDS (Volts) ZθJC Normalized Transient Thermal Resistance TJ(Max)=175°C TA=25°C 600 400 200 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note B) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Power (W) -ID (Amps) 800 10µs 100.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.5°C/W 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4.9 4/6 6 www.freescale.net.cn AOL1401 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 120 40 Power (W) Power Dissipation (W) 50 90 60 30 TA=25°C 20 30 10 0 0 25 50 75 100 125 150 0 0.01 175 TCASE (°C) Figure 12: Power De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-toAmbient (Note H) Current rating -ID(A) 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 100 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 4.9 5/6 6 www.freescale.net.cn AOL1401 P-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & W aveform Vgs Qg -10V + VD C - Qgs Vds Qgd + VDC DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds t off t on td(on) Vgs VDC Rg - DUT Vgs t d(off) tr tf 90% Vdd + Vgs 10% Vds Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s 2 L E AR = 1/2 LIAR Vds Vds Id VDC - Vgs Vgs + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & W aveform s Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.freescale.net.cn