AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Features VDS (V) = -30V ID = -38A (VGS = -10V) RDS(ON) < 17mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) D Ultra SO-8TM Top View D S G Bottom tab connected to drain S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C ID IDM TA=70°C 2.1 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 19 PDSM Junction and Storage Temperature Range 1/6 -7 38 PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B A -70 IDSM TC=25°C Power Dissipation A V -9 TA=70°C TC=100°C ±25 -27 TA=25°C Power Dissipation B Units V -38 TC=100°C Pulsed Drain Current C Continuous Drain Current A Maximum -30 RθJA RθJC Typ 18 49 2.9 °C Max 25 60 4 Units °C/W °C/W °C/W www.freescale.net.cn AOL1413 P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250uA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -70 ±10 uA V 13.5 17 18.5 24 VGS=-5V, ID=-20A 28 36 VDS=-5V, ID=20A 27 Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA -3.5 RDS(ON) Output Capacitance Units -2.5 VGS=-10V, ID=-20A Coss Max V VDS=-30V, VGS=0V IGSS IS Typ A -0.72 1760 VGS=0V, VDS=-15V, f=1MHz S -1 V -38 A 2200 pF 360 pF 255 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A mΩ pF 6.4 8 30 38 Ω nC 11 nC Qgs Gate Source Charge 7 nC Qgd Gate Drain Charge 8 nC tD(on) Turn-On DelayTime 11.5 ns tr Turn-On Rise Time 8 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 24 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 16 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 35 ns 18.5 ns 30 ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. * This device is guaranteed green after date code 8P11 (June 1ST 2008) Rev3:April, 2008 2/6 www.freescale.net.cn AOL1413 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 25 60 -10V VDS=-5V 20 125°C 15 40 ID(A) ID(A) 50 -5V 30 20 10 -4.5V 25°C 5 10 VGS=-4V 0 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 5 2 40.0 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 5 1.8 Normalized On-Resistance ID=-20A RDS(ON) (mΩ) 30.0 VGS=-5V 20.0 10.0 VGS=-10V 1.6 VGS=-10V 1.4 1.2 VGS=-5V 1 0.0 0 5 10 15 20 0.8 25 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 150 200 1.0E+02 50 ID=20A 1.0E+01 125°C 40 1.0E+00 125°C 30 IS (A) RDS(ON) (mΩ) 100 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature TC=100°C TA=25°C 20 1.0E-01 25°C 1.0E-02 1.0E-03 -55 to 175 10 25°C 1.0E-04 1.0E-05 0 0 5 10 15 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 20 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.freescale.net.cn AOL1413 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=-15V ID=-20A 6 4 2 1500 1000 Coss 500 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 35 0 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 TJ(Max)=175°C TC=25°C 100 10 100µs 1ms DC 1 10ms 0.01 0.01 60 40 TJ(Max)=175°C TC=25°C 0.1 80 10µs RDS(ON) limited Power (W) ID (Amps) Ciss 2000 Capacitance (pF) VGS (Volts) 8 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 20 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOL1413 P-Channel Enhancement Mode Field Effect Transistor 50 50 40 40 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 13: Power De-rating (Note B) 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) 100000 Power (W) 10000 1000 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD 0.001 Ton Single Pulse 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOL1413 P-Channel Enhancement Mode Field Effect Transistor G ate C harge Test C ircuit & W aveform V gs Qg + VDC Q gs V ds Q gd + DUT - VDC -10V V gs Ig C harge Resistive Switching Test Circuit & W aveforms RL Vds t off t on Vgs VDC - DUT Vgs Rg td(on) t d(off) tr tf 90% Vdd + Vgs 10% Vds Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s 2 L E AR= 1/2 LIAR Vds Vds Id VDC - Vgs Vgs + Rg BVDSS Vdd Id I AR DUT Vgs Vgs D iode R ecovery T est C ircuit & W aveform s Q rr = - Idt V ds + DUT V ds - Isd V gs Ig 6/6 Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I R M Vdd -V ds www.freescale.net.cn