AOTF4185 40V P-Channel MOSFET General Description The AOTF4185 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features VDS ID (at VGS=10V) -40V -34A RDS(ON) (at VGS=10V) < 16mΩ RDS(ON) (at VGS = 4.5V) < 20mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C ±20 V -27 A IDM -100 Avalanche Current C IAS, IAR -42 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 88 mJ Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A D Maximum Junction-to-Case 33 PD TC=100°C Junction and Storage Temperature Range 1/6 Units V -34 ID TC=100°C Maximum -40 TJ, TSTG Symbol Steady-State Steady-State W 16 RθJC -55 to 175 Typ 10 3 °C Max 13 4.5 Units °C/W °C/W www.freescale.net.cn AOTF4185 40V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -40 -1 TJ = 55°C -5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -120 ±100 VGS = -10V, ID = -20A Static Drain-Source On-Resistance TJ=125°C 50 Diode Forward Voltage IS = -1A,VGS = 0V Maximum Body-Diode Continuous Current Gate resistance VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2.5 SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge VGS=-10V, VDS=-20V, ID=-20A µA nA V mΩ S -0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Units A 20 IS Rg 16 23 VSD Reverse Transfer Capacitance 13 16 VDS = -5V, ID = -20A Output Capacitance -2.5 19 Forward Transconductance Crss -1.85 VGS = -4.5V, ID = -15A gFS Coss Max V VDS = -40V, VGS = 0V VGS(th) RDS(ON) Typ -1 V -20 A 2550 pF 280 pF 190 pF 4 6 Ω 42 55 nC 18.6 nC 7 nC Qgd Gate Drain Charge 8.6 nC tD(on) Turn-On DelayTime 9.4 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime 55 ns tf trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 25 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 75 VGS=-10V, VDS=-20V, RL= 1Ω, RGEN=3Ω Turn-Off Fall Time 30 ns 33 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. Continuous Drain Current -20 max. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% -15the device mounted to a large heatsink, assuming F. These curves are based on the junction-to-case thermal impedence which is measured with a maximum junction temperature of TJ(MAX)=175°C. 0 G. The maximum current rating is limited by bond-wires. 32 2/6 www.freescale.net.cn AOTF4185 40V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 VDS= -5V -4.5V 100 80 -10V -4V 60 ID(A) ID (A) 80 60 40 -3.5V 40 125°C 20 20 VGS= -3V 25°C 0 0 0 1 2 3 4 1.5 5 -VDS (Volts) Figure 1: On-Region Characteristics 20 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 5 Normalized On-Resistance 1.8 VGS= -4.5V 18 RDS(ON) (mΩ Ω) 2 16 14 VGS= -10V 12 10 0 5 10 15 1.4 VGS= -4.5V ID= -15A 1.2 1.0 0.8 IF=-6.5A, dI/dt=100A/µs 20 25 30 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 35 VGS= -10V ID= -20A 1.6 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID= -20A 30 1E+01 125°C -IS (A) RDS(ON) (mΩ Ω) 1E+00 25 1E-01 125°C 20 1E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 25°C 15 25°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 1E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -V (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOTF4185 40V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 VDS= -20V ID= -20A 3500 Ciss 3000 Capacitance (pF) -VGS (Volts) 8 6 4 2 2500 2000 1500 Crss 1000 Coss 500 0 0 0 5 10 15 20 25 30 35 40 45 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 1000 1000 TJ(Max)=175°C Tc=25°C -ID (Amps) 100µs 10 1 DC RDS(ON) limited 100 TJ(Max)=175°C TC=25°C 0.01 0.1 IF=-6.5A, dI/dt=100A/µs 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JA Normalized Transient Thermal Resistance 1ms 10ms 100ms Power (W) 100 0.1 40 -VDS (Volts) Figure 8: Capacitance Characteristics 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.5°C/W 100 10 0.0001 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD NOT ASSUME ANY LIABILITY ARISING COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 4/6 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) 100 1000 www.freescale.net.cn AOTF4185 40V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 40 30 Current rating ID(A) Power Dissipation (W) 40 20 10 30 20 10 0 0 0 25 50 75 100 125 150 175 TCASE (° °C) Figure 12: Power De-rating (Note B) 0 25 50 75 100 125 150 175 TCASE (° °C) Figure 13: Current De-rating (Note B) ID(A), Peak Avalanche Current 1000 TA=25°C 100 10 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 14: Single Pulse Avalanche capability 5/6 www.freescale.net.cn AOTF4185 40V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn