TAYCHIPST BYT11-600

BYT11-600 THRU BYT11-1000
600V-1000V
FAST RECOVERY RECTIFIER DIODES
1.0A
FEATURES
D
D
D
D
D
High efficiency
Low power losses
Very low switching losses
Low reverse current
High surge capability
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IFRM
Repetive Peak Forward Current
tp ≤ 20µs
20
A
IF (AV)
Average Forward Current *
Ta = 75°C
δ = 0.5
1
A
IFSM
Surge non Repetitive Forward Current
tp = 10ms
Sinusoidal
35
A
Ptot
Power Dissipation *
Ta = 55°C
1.25
W
Tstg
Tj
Storage and Junction Temperature Range
- 55 to + 150
- 55 to + 150
°C
TL
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
Symbol
VRRM
230
°C
BYT 11-
Parameter
Repetitive Peak Reverse Voltage
Unit
600
800
1000
600
800
1000
V
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
Test Conditions
Min.
Typ.
Max.
Unit
IR
Tj = 25°C
VR = VRRM
20
µA
VF
Tj = 25°C
IF = 1A
1.3
V
Max.
Unit
100
ns
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
Tj = 25°C
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IF = 0.5A
IR = 1A
1 of 2
Min.
Irr = 0.25A
Typ.
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BYT11-600 THRU BYT11-1000
FAST RECOVERY RECTIFIER DIODES
RATINGS AND CHARACTERISTIC CURVES
F i gu re 1. Ma xi mu m av era ge power
dissipation versus average forward current.
600V-1000V
1.0A
BYT11-600 THRU BYT11-1000
Figure 2. Average forward current versus
ambient temperature.
Figure 3. Thermal resistance versus lead
length.
Figure 5. Peak forward current
versus peak forward voltage drop
(maximum values).
Figure 4. Transient thermal impedance
junction-ambient for mounting n°2 versus
pulse duration (L = 10 mm).
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2 of 2
Web Site: www.taychipst.com