TYSEMI 2SC3143

Transistors
SMD Type
Product specification
2SC3143
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Small output capacitance.
0.55
High breakdown voltage.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
180
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
80
mA
Collector current (pulse)
ICP
150
mA
Collector dissipation
PC
200
mW
Jumction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
2SC3143
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Collector cutoff current
IcBO
VCB = 120V , IE = 0
Emitter cutoff current
IEBO
VEB = 4V , IC = 0
DC current Gain
hFE
VCE = 5V , IC = 10 mA
fT
VCE = 10V , IC = 10 mA
150
2.0
Gain bandwidth product
Output capacitance
Cob
VCB = 10V , f = 1MHz
Base-emitter voltage
VBE
VCE = 5V , IC = 10 mA
Collector-emitter saturation voltage
60
Max
Unit
0.1
ìA
0.1
ìA
270
VCE(sat) IC = 30mA , IB = 3mA
MHz
2.5
pF
1.5
V
0.7
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
180
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
160
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
Turn-on time
ton
0.18
ìs
Storage time
tstg
1.0
ìs
tf
0.2
ìs
Fall time
hFE Classification
K
Marking
Rank
3
4
5
hFE
60 120
90 180
135 270
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2