Transistors Transistors IC IC IC SMD SMD Type Type Product specification 2SC4306 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Large current capacity. +0.15 0.50 -0.15 +0.2 9.70 -0.2 Fast switching speed. +0.15 5.55 -0.15 Low saturation voltage. +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 8 A Collector current (pulse) ICP 12 A Base current IB 1.5 A Collector dissipation Tc=25 PC 1 W PC 15 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors Transistors IC IC IC SMD SMD Type Type Product specification 2SC4306 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 20V, IE=0 1 ìA Emitter cutoff current IEBO VEB = 4V, IC=0 1 ìA DC current gain hFE Gain bandwidth product Output capacitance VCE = 2V , IC = 500mA 100 VCE = 2V , IC = 6A 70 400 fT VCE = 2V , IC = 500mA 250 MHz Cob VCB = 10V , f = 1.0MHz 60 pF Collector-emitter saturation voltage VCE(sat) IC = 5A , IB = 250mA 220 400 mV Base-emitter saturation voltage VBE(sat) IC = 5A , IB = 250mA 1 1.3 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 20 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V Turn-on time ton 30 300 ns Storage time tstg 250 1000 ns tf 15 150 ns Fall time hFE Classification Rank R S T hFE 100 200 140 280 200 400 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2