Transistors IC SMD Type Product specification 2SC4080 Features High Ft High breakdown voltage Small reverse transfer capacitance excellent high-frequency characteristic Adoption of FBET prccess Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage VCBO 200 V collector-emitter voltage VCEO 200 V emitter-base voltage VEBO 4 V collector current IC 100 mA Collector Current (pulse) ICP 200 mA Collector Dissipation PC 500 mA 1.3 W Junotion Temperature TJ 150 Tstg -55 to 150 storage Temperature 2 *Mounted on ceramic board (250mm X0.8mm) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SC4080 Electrical Characteristics Ta = 25 Max Unit collector cutoff Current Parameter Symbol ICBO VCB=150V,IE=0 Testconditons Min 0.1 ìA Emitter cutoff current IEBO VEB=2V,IC=0 1.0 ìA DC Current Gain hFE VCE=10V,IC=10mA 40 VCE=10V,IC=100mA 20 Typ 320 Gain-Bandwidth product fT VCE=30V,IC=30mA 400 MHz Output Capacitance cob VCB=30V,f=1MHz 1.8 pF Reverse Transfer cre VCB=30V,f=1MHz 1.4 Collector to Emitter Saturation Voltage VCE(sat) IC=20mA,IB=2mA 1 V Base to Emitter Stauration Voltage VBE(sat) IC=20mA,IB=2mA 1 V Collector to Base Breakdown Voltage V(BR)CBO IC=10ìA,IE=0 200 V Collector to Emitter Breakdown Voltage V(BR)CEO IC=1mA,IB=0 200 V Emitter to Base Breakdown Voltage V(BR)EBO IE=100ìA,IC=0 4 V hFE Classification CI Marking Rank C D E F Type 40 to 80 60 to 120 100 to200 160 to 320 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2