TYSEMI 2SD1733

Transistors
SMD Type
Product specification
2SD1733
TO-252
Features
6.50
+0.2
5.30-0.2
High VCEO, VCEO=80V .
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
High IC, IC=1A (DC) .
NPN silicon transistor
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
0.127
max
+0.25
2.65 -0.1
Epitaxial planer type
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Low VCE (sat) .
+0.15
0.50 -0.15
Good hFE linearity .
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
IC
1
A
IC (Pulse) *
2
A
1
W
10
W
Collector current
Collector power dissipation
PC
Tc = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pw=20ms.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
BVCBO
IC=50ìA
120
V
Collector-emitter voltage
BVCEO
IC=1mA
80
V
Emitter-base voltage
BVEBO
IE=50ìA
5
V
Collector cutoff current
ICBO
VCB=100V
1
ìA
Emitter cutoff current
IEBO
VEB=4V
1
ìA
hFE
VCE=3V,IC=0.5A
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat) IC=500mA,IB=20mA
Transition frequency
fT
Output capacitance
Cob
82
390
0.15
0.4
V
VCE=10V, IE= -50mA, f=100MHz
100
MHz
VCB=10V, IE=0A, f=1MHz
20
pF
hFE Classification
Rank
P
Q
R
hFE
82 180
120 270
180 390
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