TYSEMI 2SD1918

Transistors
IC
SMD Type
Product specification
2SD1918
6.50
+0.2
5.30-0.2
+0.15
-0.15
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
High breakdown voltage.(BVCEO = 160V)
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High transition frequency.(fT = 80MHZ)
+0.15
0.50 -0.15
Low collector output capacitance.Typ. 20pF at VCB = 10V
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
Collector power dissipation
PC
TC = 25
1.5
A(DC)
3
A(Pulse) *
1
W
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pw=200msec duty=1/2
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO
IC = 50ìA
160
V
Collector to emitter breakdown voltage
V(BR)CEO
IC = 1mA
160
V
Emitter to base breakdown voltage
V(BR)EBO
IE = 50ìA
5
V
Collector cutoff current
ICBO
VCB = 120V
1
ìA
Emitter cutoff current
IEBO
VEB = 4V
1
ìA
2
V
1.5
V
Collector to emitter saturation voltage *
VCE(sat)
IC/IB = 1A/0.1A
Base to emitter voltage *
VBE(sat)
IC/IB = 1A/0.1A
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
VCE/IC = 5V/0.1A
120
390
VCE = 5V , IE = -0.1A , f = 30MHz
80
MHz
VCB = 10V , IE = 0A , f = 1MHz
20
pF
* Measured using pulse current.
hFE Classification
Rank
Q
R
hFE
120 to 270
180 to 390
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