TYSEMI MB6S

Product specification
MB6S
MBS
■ Features
● Glass passivated chip junctions
Unit: mm
4
1
3
2
● High surge current capability
● Ideal for printed circuit board
1. +
2. AC in
3. AC in
4. -
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRMM
VRWM
VDC
600
V
RMS Reverse Voltage
VRMS
420
V
IO
0.5
A
Average Forward Rectified Current
on glass-epoxy P.C.B. (Note 1)
on aluminum substrate (Note 2)
Non-Repetitive Peak Forward Surge Current, 8.3 ms Single
half-sine-wave Superimposed on Rated Load (JEDEC
method)
0.8
IFSM
35
A
VF
1.0
V
IR
5
100
μA
Rating for fusing (t < 8.3ms)
I2t
5.0
A2s
Typical Total Capacitance (per element) (Note 3)
CJ
13
pF
RθJA
85
℃/W
Tj, Tstg
-55 to +150
℃
Forward Voltage (per element) @ IF = 0.4A
Reverse Current(per element) @ Rated VR
@ TA = 25℃
@ TA = 125℃
Typical Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Note 1. On glasse poxy P.C.B. mounted on 0.05X0.05" (1.3X1.3mm) pads
2. On aluminum substrate P.C.B. with an area of 0.8"X0.8" (20X20mm) mounted on 0.05X0.05" (1.3 X 1.3mm) solder pad
3.Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Marking
Marking
MB6S
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Product specification
MB6S
Typical Characteristics
FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT PER LEG
35
Aluminum Substrate
0.7
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD RECTIFIED CURRENT. (A)
FIG.1- DERATING CURVE FOR OUTPUT RECTIFIED
CURRENT
0.8
0.6
0.5
Glass
Epoxy
P.C.B
0.4
0.3
0.2
25
15
10
20
40
60
1 Cycle
5.0
0
0
80
100
120
140
0
160
10
1
O
FIG.4- TYPICAL REVERSE LEAKAGE
CHARACTERISTICS PER LEG
FIG.3- TYPICAL FORWARD VOLTAGE
CHARACTERISTICS PER LEG
INSTANTANEOUS REVERSE LEAKAGE CURRENT. (mA)
INSTANTANEOUS FORWARD CURRENT. (A)
10
Tj=150 0C
1
Tj=25 0C
0.1
Tj=25 C
Pulse Width=300ms
1% Duty Cycle
0.4
0.6
0.8
1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE. (V)
100
Number of Cycles)
AMBIENT TEMPERATURE. ( C)
0.01
0.2
F=60 Hz
F=50 Hz
20
Resistive or Inductive Load
0.1
Ta=40 C
Single Half Sine-Wave
(JEDEC Method)
30
100
Tj=125 0C
10
1
0.1
Tj=25 0C
0.01
1.4
0
80
20
40
60
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
100
FIG.5- TYPICAL JUNCTION CAPACTITANCE
PER LEG
JUNCTION CAPACITANCE (pF)
30
f = 1 MHz
Vsig = 50mVp-p
20
15
10
5.0
0
0.1
http://www.twtysemi.com
Tj=25 C
25
1
10
REVERSE VOLTAGE. (V)
[email protected]
100 200
4008-318-123
2 of 2