WILLAS FM120-M+ MMBD7000W THRU Dual Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE • Low profile surface mounted application in order to optimize board space. declare that the material of product z We power loss, high efficiency. • Low compliance with RoHS requirements. • High current capability, low forward voltage drop. z Moisture Sensitivity Level 1 capability. • High surge ORDERING INFORMATION 0.146(3.7) 0.130(3.3) 3 • Guardring for overvoltage protection. Device Marking Shipping switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. M5C MMBD7000W 3000/Tape & Reel • Lead-free parts meet environmental standards of 0.071(1.8) 0.056(1.4) 1 2 Pb-FreeMIL-STD-19500 package is available /228 RoHS product for packing code suffix RoHS •product for packing code suffix ”G” "G" free product for packing HalogenHalogen free product for packing code code suffixsuffix “H” "H" Mechanical data DIODE) MAXIMUM RATINGS(EACH SOT-323 Rating Symbol Value : UL94-V0 rated flame retardant • Epoxy Reverse Voltage V 100 R • Case : Molded plastic, SOD-123H 200 Forward Current IF , • Terminals :Plated terminals, solderable per MIL-STD-750 Peak Forward Surge Current Method 2026 I FM(surge) 0.040(1.0) 0.024(0.6) Unit Vdc mAdc mAdc 500 • Polarity : Indicated by cathode band Position : Any • Mounting Characteristic Symbol (1) gram • Weight : Approximated 0.011 Total Device Dissipation FR– 5 Board PD 0.031(0.8) Typ. 1 Max 200 T A = 25°C MAXIMUM RATINGS AND ELECTRICAL 1.6 Derate above 25°C Ratings 25℃ ambient temperature unless otherwise specified. ThermalatResistance, Junction to Ambient R θ JA 556 Derate above 25°C RATINGS Thermal Resistance, Junction to Ambient Marking Code Junction and Storage Maximum Recurrent PeakTemperature Reverse Voltage 0.031(0.8) Typ. Dimensions in inches and (millimeters) THERMAL CHARACTERISTICS Single phase Dissipation half wave, 60Hz, resistive of inductive Total Device P D load. (2) For capacitive load, derate Alumina Substrate, T A = current 25°C by 20% Unit mW ANODE °C/W mW 300 2.4 mW/°C FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH R θ JA 417 °C/W 12 13 14 15 16 18 10 115 120 T J , T stg °C 40 20+150 30 50 60 80 100 150 200 Vo VRRM –55 to Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo DEVICEDC MARKING Maximum Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo IO Peak Forward Surge Current 8.3 ms single half sine-wave IFSM otherwise noted)(EACH DIODE) ELECTRICAL CHARACTERISTICS (T A = 25°C unless superimposed on rated load (JEDEC method) Characteristic Typical Thermal Resistance (Note 2) OFFCHARACTERISTICS Typical Junction Capacitance (Note 1) Reverse Breakdown Voltage Operating Temperature Range (I (BR) = 100 µAdc) Storage Temperature Range Reverse Voltage Leakage Current (V R = 50 Vdc) CHARACTERISTICS (V R = 100 Vdc) Voltage at 1.0A DC Maximum Forward 2 CATHODE 3 CATHODE/ANODE CHARACTERISTICS mW/°C MMBD7000W=M5C Maximum Average Forward Rectified Current 0.012(0.3) Typ. RΘJA CJ TJ 2012-1 Min V (BR) -55 to +125 100 Max — 40 120 - 65 to +175 TSTG A A Unit ℃ P Vdc -55 to +150 ℃ ℃ µ Adc I RFM130-MH FM140-MH — FM150-MH FM160-MH 1.0 FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH VF (V R = 50 Vdc,125°C) Maximum Average Reverse Current at @T A=25℃ IR Forward Voltage @T A=125℃ Rated DC Blocking Voltage (I F = 1.0 mAdc) NOTES: (I F = 10 mAdc) 1- (I Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. F = 100 mAdc) 2- Reverse Thermal Resistance RecoveryFrom TimeJunction to Ambient (I F = I R = 10 mAdc) (Figure 1) Capacitance(VR=0V) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 Symbol 1.0 30 I R2 I R3 VF 0.50 — — 0.70 3.0 100 0.5 10 0.85 0.9 0.92 Vo Vdc 0.55 0.67 0.75 0.7 0.82 1.1 t rr — 4.0 ns C — 1.5 pF mA WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD7000W THRU Dual Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 2.0 k surface mounted application in order to • Low profile 820 Ω +10 V board space. optimize • Low power loss, high efficiency. 0.1µF low forward voltage drop. • High current capability, IF 100 µH • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. 0.1 µF DUT planar chip, metal silicon junction. • Silicon50epitaxial 50 Ω INPUT Ω OUTPUT SAMPLING PULSE parts meet environmental standards of • Lead-free • tp tr IF t 0.146(3.7) 0.130(3.3) t 10% 0.012(0.3) Typ. 90% OSCILLOSCOPE GENERATOR/228 MIL-STD-19500 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" i IR INPUT SIGNAL V t rr 0.071(1.8) 0.056(1.4) = 1.0 mA R(REC) OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) R Mechanical data Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. 0.040(1.0) 0.024(0.6) retardant • Epoxy : UL94-V0 rated flame Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. Notes: 3. t p » t rr , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026Figure 1. Recovery Time Equivalent Test Circuit Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gramCURVES APPLICABLE TO EACH CATHODE 10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS I F , FORWARD CURRENT (mA) Ratings at 25℃ ambient temperature unless otherwise specified. = 85°C of inductive load. Single phase half wave, 60Hz,TAresistive T A= –40°C For capacitive 10 load, derate current by 20% RATINGS Maximum Recurrent Peak Reverse Voltage 1.0 VRRM 12 20 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 T A = 25°C IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM V F , FORWARD superimposed on rated load (JEDEC method) VOLTAGE (VOLTS) 13 30 Maximum Average Forward Rectified Current 0.1 0.2 0.4 0.6 T A =125°C 1.0 Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC C D , DIODE CAPACITANCE (pF) Operating Temperature Range 18 80 10 100 115 150 120 200 Vo 28 0.01 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo T A =55°C T A =25°C 1.0 30 40 20 30 V R , REVERSE VOLTAGE (VOLTS) 0 10 Am 50 Am Figure 3.40Leakage Current 120 -55 to +125 ℃/ P -55 to +150 ℃ - 65 to +175 ℃ 0.64 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF 0.50 0.70 0.85 0.5 IR 0.60 @T A=125℃ NOTES: 16 60 TSTG Maximum Average Reverse Current at @T A=25℃ 15 50 TJ 0.68 14 40 1.2 CJ Typical Junction Capacitance (Note 1) 0.1 0.001 0.8 Typical Thermal ResistanceFigure (Note 2) 2. Forward Voltage RΘJA Rated DC Blocking Voltage T A =150°C FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH T A =85°C Marking Code I R, REVERSE CURRENT ( µA) 100 0.9 0.92 Vo 10 mA 0.56 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.52 0 2.0 4.0 6.0 8.0 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD7000W THRU Dual Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features offers • Batch process design, excellent power dissipationSOT-323 better reverse leakage current and thermal resistance. SOD-123H .004(0.10)MIN. • Low profile surface mounted application in order to optimize board space. .054(1.35) .045(1.15) • Low power loss, high efficiency. drop. • High current capability, low forward voltage .087(2.20) • High surge capability. .070(1.80) • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .056(1.40) • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) .010(0.25) .003(0.08) 0.031(0.8) Typ. .047(1.20) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .004(0.10)MAX. RATINGS .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage .016(0.40) 12 .008(0.20) 20 VRRM 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ CHARACTERISTICS -55 to +125 A ℃ P -55 to +150 0.025 0.65 A - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 0.075 1.9 NOTES: 40 120 0.025 TSTG 0.65 Storage Temperature Range Rated DC Blocking Voltage RΘJA Typical Thermal Resistance (Note 2) 1.0 30 Dimensions in inches and (millimeters) V m 0.035 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.9 0.028 0.7 inches mm 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.