WILLAS FM120-M+ 1N4148W THRU BAV16W FM1200-M+ SOD-123 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FAST SWITCHING DIODE Pb Free Product Package outline Features FEATURES • Batch process design, excellent power dissipation offers reverseSpeed leakage current and thermal resistance. z Fastbetter Switching • Low profile surface mounted application in order to z Surface Mount Ideally Suited for Automatic Insertion optimize boardPackage space. Low power loss, high efficiency. • z For General Purpose Switching Applications • High current capability, low forward voltage drop. z High Conductance surge capability. • High z Pb-Free package is available for overvoltage protection. • Guardring Ultra high-speed switching. • RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packingstandards code suffix parts meet environmental of “H” • Lead-free SOD-123 SOD-123H + 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) - MIL-STD-19500 /228 MARKING: product for packing code suffix "G" • RoHSBAV16W=T6,1N4148W=T4 Halogen free product for packing code suffix "H" Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Parameter Symbol • Case : Molded plastic, SOD-123H , • TerminalsPeak :Plated terminals, solderable per VRMMIL-STD-750 Non-Repetitive Reverse Voltage Method 2026 Limit Unit 0.031(0.8) Typ. 0.031(0.8) Typ. 100 V VRRM Peak Repetitive Peak Reverse Voltage • Polarity : Indicated by cathode band Working Peak Reverse Voltage • Mounting Position : Any DC Blocking Voltage • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 75 VRWM 53 VR(RMS) RMS Reverse Voltage V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS IFM Forward Continuous Current Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, Current resistive of inductive load. IO Average Rectified Output For capacitive load, derate current by 20% Peak Forward Surge Current @t=1.0μs RATINGS Marking Code @t =1.0s mA 150 mA 2.0 1.0 Maximum Recurrent Peak Reverse Voltage Power Dissipation VPd RRM 12 20 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 Maximum DC Blocking Voltage R θJA VDC 20 30 40 250 50 60 80 100 Maximum Average Forward Rectified Current IO Tj IFSM to Ambient Junction Temperature Peak Forward Surge Current 8.3 ms single half sine-wave Storage Temperature superimposed on rated load (JEDEC method) TSTG Typical Thermal Resistance (Note 2) RΘJA Parameter Storage Temperature Range TSTG Symbol CHARACTERISTICS Maximum Forward Voltage at 1.0A DC ForwardAverage voltage Maximum Reverse Current at @T A=25℃ V 14 40 50 500 15 16 60 18 80 10 100 40 120 -55 to +125 Min Typ 0.715 115 120 200 Vol 105 140 Volt ℃/W150 200 Volt V I =1mA F1 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MHFFM1100-MH FM1150-MH FM1200-MH UNI SYMBOL VF VF2 IR 0.50 0.855 0.70 V 0.5 0.85 I =10mA F 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse recovery time trr 4 ns 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2-Reverse Thermal Resistance current From Junction to Ambient 2012-06 2012- PF ℃ VF4 NOTES: ℃/W ℃ V Am ℃ Unit - 65 to +175 Conditions 1.0 @T A=125℃ VF3 Rated DC Blocking Voltage Am ℃ -55 to +150 Max mW150 1.0 30 -55~+150 TJ Operating Temperature Range 13 30 150 CJ Electrical Ratings @Ta=25℃ Typical Junction Capacitance (Note 1) 300 A IFSM FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM1200-MH UN Thermal Resistance from Junction V VR 10 0.9 0.92 Vol IF=50mA mAm IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 1N4148W THRU BAV16W FM1200-M+ SOD-123 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Typical Characteristics better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 0.146(3.7) Reverse /228 Ta =2 5 o C • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 1 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.1 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.130(3.3) Characteristics 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) o Ta=100 C 1000 REVERSE CURRENT IR C (nA) 10000 o MIL-STD-19500 10 Ta =1 00 FORWARD CURRENT IF (mA) optimize board space. • Low power loss, high efficiency. Forward Characteristics • High current capability, low forward voltage drop. 1000 • High surge capability. • Guardring for overvoltage protection. Ultra high-speed switching. •100 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 100 o Ta=25 C 10 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 •0.01 Polarity : Indicated by cathode band 0.0 0.4 0.8 : AnyVOLTAGE V • Mounting Position FORWARD F • Weight : Approximated 0.011 gram 1.2 1 1.6 0 20 (V) Dimensions in inches and (millimeters) 40 60 80 REVERSE VOLTAGE VR 100 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS f=1MHz RATINGS Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage 13 30 14 21 VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 1.2 superimposed on rated load (JEDEC method) 0.8 4 TSTG 8 12 CHARACTERISTICS REVERSE VOLTAGE Maximum Forward Voltage at 1.0A DC 16 400 14 40 15 50 20 16 60 18 80 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 200 1.0 30 100 40 120 300 0 10 100 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 0 25 50 75 ℃ 100 125 150 AMBIENT TEMPERATURE Ta (℃ ) FM1150-MH FM1200-MH UNIT FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH VR SYMBOL (V) Volts 0.9 0.92 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 500 -55 to +125 TJ Operating Temperature Range 0 CJ Typical Junction Capacitance (Note 1) Storage Temperature Range 0.6 RΘJA Typical Thermal Resistance (Note 2) POWER DISSIPATION VRMS Maximum DC Blocking Voltage 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave (mW) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code 1.4 Power Derating Curve 600 PD CAPACITANCE BETWEEN TERMINALS CT (pF) Ratings at 25℃ ambient temperature unless otherwise specified. Capacitance Characteristics Single phase half wave, 60Hz, resistive of inductive load. 1.6 For capacitive load, derate current by 20% Ta=25℃ @T A=125℃ IR 0.5 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. FM120-M+ 1N4148W BAV16W THRU FM1200-M+ WILLAS SOD-123 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOD-123 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .154(3.90) retardant • Epoxy : UL94-V0 rated flame .130(3.30) Halogen free product for packing code suffix "H" .018(0.45) .039(1.00) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .114(2.90) • Polarity : Indicated by cathode band .098(2.50) Method 2026 .071(1.80) .055(1.40) Mechanical data 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .053(1.35) Dimensions in inches and (millimeters) .027(0.70) • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 18 10 115 80 100 150 .004(0.1)MAX. 120 200 Vol 56 70 105 140 Vol 80 100 150 200 Vol 1.0 30 .008(0.20)MAX. -55 to +125 40 120 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN V .016(0.40)MIN. Maximum Forward Voltage at 1.0A DC F Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IR 0.50 0.70 0.85 0.5 .018(0.45) .010(0.25) 0.9 0.92 Vol 10 mAm 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012- Rev.C CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.