RoHS 2SA608 2SA608 TRANSISTOR (PNP) D T ,. L TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-Base breakdown voltage V(BR)EBO C E L Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage Transition frequency J E Collector output capacitance unless otherwise specified) O Test R T Collector-base breakdown voltage N C O 1 2 3 conditions MIN TYP MAX Ic=-100µA, IE=0 -40 V Ic=-1mA, IB=0 -30 V IE=-100µA, IC=0 -5 V ICBO VCB=-25V, IE=0 -1 µA IEBO VEB=-4V, IC=0 -1 µA hFE VCE=-6V, IC=-1mA VCE(sat) IC=-50mA, IB=-5mA fT VCE=-6V, IC=-10mA 180 MHz Cob VCB=-6V, f=1MHz 7 pF 60 560 -0.5 CLASSIFICATION OF hFE Rank W Range D E F G 60-120 100-200 160-320 280-560 WEJ ELECTRONIC CO. UNIT Http:// www.wej.cn E-mail:[email protected] V