RoHS 2SD999 2SD999 TRANSISTOR (NPN) PCM: 0.5 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter 2 V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector-emitter saturation voltage E Base-emitter saturation voltage J E MIN TYP MAX Ic=100µA, IE=0 30 V Ic=1mA, IB=0 25 V IE=100µA, IC=0 5 V O IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100mA 90 hFE(2) VCE=1V, IC=1A 50 VCE(sat) IC=1A, IB=100mA 0.4 V VBE (sat) IC=1A, IB=100mA 1.2 V VBE VCE=6V, IC=10mA 0.7 V fT VCE=6V, IC=10mA 130 MHz Cob VCB=6V, IE=0, f=1MHz 22 pF Collector output capacitance 400 0.6 CLASSIFICATION OF hFE(1) Rank Range CM CL CK 90-180 135-270 200-400 Marking WEJ ELECTRONIC CO. UNIT µA Transition frequency W N conditions 0.1 C E L DC current gain C VCB=30V, IE=0 ICBO Emitter cut-off current Test R T Collector cut-off current IC O 3 unless otherwise specified) Symbol Collector-base breakdown voltage 1 3. EMITTER TJ, Tstg: -55℃ to +150℃ Base-emitter voltage D T ,. L SOT-89 FEATURES Power dissipation Http:// www.wej.cn E-mail:[email protected] 2SD999 R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]