DSEI 2x 101 Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 600 600 VRRM = 600 V IFAVM = 2x 96 A = 35 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 150 96 TBD A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1080 1170 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7100 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5800 5700 A2s A2s -40...+150 150 -40...+150 °C °C °C 250 W 2500 V~ Features International standard package miniBLOC (ISOTOP compatible) Isolation voltage 2500 V~ matched diodes f. parallel operation Planar passivated chips two independent diodes Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour l l l l l l l l l I2t TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13 Weight 30 Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM IF = 100 A; TVJ = 150°C TVJ = 25°C VF VT0 rT For power-loss calculations only RthJC RthCH g mA mA mA 1.17 1.25 V V 0.70 4.7 V mΩ 0.5 K/W K/W 0.05 miniBLOC, SOT-227 B Nm/lb.in. Nm/lb.in. Characteristic Values (per diode) typ. max. 3 1 20 l M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 IF = 1 A; -di/dt = 400 A/µs; VR = 30 V; TVJ = 25°C 35 50 ns P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 IRM VR = 100 V; IF = 80 A; -diF/dt = 200 A/µs L ≤ 0.05 mH; TVJ = 100°C 19 24 A R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 ¬ IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 031 trr D5 - 57 DSEI 2x 101, 600V 7 T = 100°C µC VJ V = 300V 6 R 150 A 125 IF Qr 80 A TVJ= 100°C 70 VR = 300V IRM 60 5 100 IF=200A IF=100A IF= 50A 4 75 TVJ=150°C 3 TVJ=100°C 2 50 IF=200A IF=100A IF= 50A 40 30 50 25 20 1 10 TVJ=25°C 0 0.0 0.5 1.0 V VF 0 100 1.5 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 260 ns 240 1.4 1.2 trr 0 200 400 s 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 60 V TVJ= 100°C VR = 300V TVJ= 100°C IF = 100A 50 tfr tfr 200 Qr 0.8 IRM µs 2.5 2.0 40 1.0 3.0 VFR 220 Kf 0 A/s 1000 -diF/dt IF=200A IF=100A IF= 50A 180 VFR 30 1.5 20 1.0 10 0.5 160 0.6 140 0.4 120 0 50 100 °C 150 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/ 800 s 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 K/W 0 0 400 600 800 diF/dt 0.0 1000 A/s Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 5 D=0.7 ZthJC 200 0.5 0.3 Rthi (K/W) ti (s) 0.02 0.05 0.076 0.24 0.114 0.00002 0.00081 0.01 0.94 0.45 0.2 0.1 0.1 0.05 Single Pulse 0.05 0.001 DSEI 2x101-06 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case at various duty cycles D5 - 58 © 2000 IXYS All rights reserved DSEI 2x 101 Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 1200 1200 VRRM = 1200 V IFAVM = 2x 91 A = 40 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-12A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ¬ IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM IFSM TVJ = 45°C; Features International standard package miniBLOC (ISOTOP compatible) Isolation voltage 2500 V~ matched diodes f. parallel operation Planar passivated chips two independent diodes Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour l 130 91 TBD A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 900 970 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 810 870 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4100 4000 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 3300 3200 A2s A2s -40...+150 150 -40...+150 °C °C °C 250 W 2500 V~ l l l l l l l l I2t TVJ = 45°C TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13 Weight 30 Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM IF = 100 A; TVJ = 150°C TVJ = 25°C VF VT0 rT RthJC RthCH g 3 1.5 15 mA mA mA 1.61 1.87 V V 1.01 6.1 V mΩ 0.5 K/W K/W 0.05 miniBLOC, SOT-227 B Nm/lb.in. Nm/lb.in. Characteristic Values (per diode) typ. max. For power-loss calculations only l M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 trr IF = 1 A; -di/dt = 400 A/µs; VR = 30 V; TVJ = 25°C 40 60 ns P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 IRM VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs L ≤ 0.05 mH; TVJ = 100°C 24 30 A R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 ¬ IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 008 D5 - 59 DSEI 2x 101, 1200V 16 T = 100°C µC VVJ= 600V 14 R 150 A 125 IF 140 TVJ= 100°C A VR =600V 120 IRM Qr 12 100 100 10 IF=200A IF=100A IF= 50A TVJ=150°C 8 75 TVJ=100°C 80 6 50 TVJ= 25°C 40 4 25 20 2 0 0.0 0.5 IF=200A IF=100A IF= 50A 60 1.5 V VF 1.0 0 100 2.0 Fig. 1 Forward current IF versus VF A/s 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 500 1.4 450 1.2 400 s 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt TVJ= 100°C IF = 100A 50 VFR 400 40 350 30 IRM IF=200A IF=100A IF= 50A 300 µs tfr tfr 0.8 1.5 1.0 1.0 VFR 0.5 20 Qr 0.6 10 250 0.4 200 0 40 80 120 °C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/ 800 s 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 K/W 0 0 200 400 600 800 diF/dt 0.0 1000 A/s Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 5 D=0.7 ZthJC 200 V trr Kf 0 60 TVJ= 100°C VR = 600V ns 0 0.5 0.3 Rthi (K/W) ti (s) 0.02 0.05 0.076 0.24 0.114 0.00002 0.00081 0.01 0.94 0.45 0.2 0.1 0.1 0.05 Single Pulse 0.05 0.001 DSEI 2x101-12 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case at various duty cycles D5 - 60 © 2000 IXYS All rights reserved