BRIEF MX28F128J3 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY FEATURES • 2.7V to 3.6V operation voltage • Block Structure - 128 x 128Kbyte Erase Blocks • Fast random / page mode access time - 150/25 ns Read Access Time • 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User Programmable OTP Cells • 32-Byte Write Buffer - 6 us/byte Effective Programming Time • Enhanced Data Protection Features Absolute Protection with VPEN = GND - Flexible Block Locking - Block Erase/Program Lockout during Power Transitions Software Feature • Support Common Flash Interface (CFI) - Flash device parameters stored on the device and provide the host system to access. • Automation Suspend Options - Block Erase Suspend to Read - Block Erase Suspend to Program - Program Suspend to Read Hardware Feature(Not for 48-TSOP/48-RTSOP) • A0 pin - Select low byte address when device is in byte mode. Not used in word mode. • STS pin - Indicates the status of the internal state machine. • VPEN pin - For Erase /Program/ Block Lock enable. • VCCQ Pin - The output buffer power supply, control the device 's output voltage. Performance • Low power dissipation - typical 15mA active current for page mode read - 80uA/(max.) standby current - Deep power-down current: 5uA • High Performance - Block erase time: 2s typ. - Byte programming time: 210us typ. - Block programming time: 0.8s typ. (using Write to Buffer Command) • Program/Erase Endurance cycles: 10,000 cycles Packaging - 48-Lead TSOP - 48-Lead RTSOP - 56-Lead TSOP - 64-ball CSP Technology - MX28F128J3 using Nbit (0.25u) Flash Technology OCT/30/2002 1 MX28F128J3 GENERAL DESCRIPTION The MXIC's MX28F128J3 series Flash use the most advance 2 bits/cell Nbit technology, double the storage capacity of memory cell. The device provide the high density Flash memory solution with reliable performance and most cost-effective. enable (CE0, CE1, CE2) and output enable (OE) controls. The device augment EPROM functionality with incircuit electrical erasure and programming. The device uses a command register to manage this functionality. The MXIC's Nbit technology reliably stores memory contents even after the specific erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms by utilizing the dielectric's character to trap or release charges from ONO layer. The device organized as by 8 bits or by 16 bits of output bus. The device is packaged in 48-Lead TSOP, 48-Lead RTSOP, 56-Lead TSOP, and 64-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The device uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The device offers fast access time and allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the device has separate chip The highest degree of latch-up protection is achieved PIN CONFIGURATION 48-TSOP (12mm x 20mm) (for MX28F128J3 word mode only) WE A17 A16 A15 A14 A13 A12 A11 A10 A9 A20 A22 A21 A19 A18 A8 A7 A6 A5 A4 A3 A2 A1 CE0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 MX28F128J3 (x16 only) Normal Type 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 GND GND Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC VCC A23 Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND RESET(*) (* RESET pin : high enable) OCT/30/2002 2 MX28F128J3 48-RTSOP (12mm x 20mm) (for MX28F128J3 word mode only) GND GND Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC VCC A23 Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND RESET(*) 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 MX28F128J3 (x16 only) Reverse Type 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 WE A17 A16 A15 A14 A13 A12 A11 A10 A9 A20 A22 A21 A19 A18 A8 A7 A6 A5 A4 A3 A2 A1 CE0 (* RESET pin : high enable) 56 TSOP (14mm x 20mm) A22 CE1 A21 A20 A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 VPEN RESET A11 A10 A9 A8 GND A7 A6 A5 A4 A3 A2 A1 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 NC WE OE STS Q15 Q7 Q14 Q6 GND Q13 Q5 Q12 Q4 VCCQ GND Q11 Q3 Q10 Q2 VCC Q9 Q1 Q8 Q0 A0 BYTE A23 CE2 OCT/30/2002 3 MX28F128J3 64 Ball CSP (10x13x1.2mm, 1.0mm-ball pitch) 1 2 3 4 5 6 7 8 A A1 A6 A8 VPEN A13 VCC A18 A22 B A2 GND A9 CE0 A14 DU A19 CE1 C A3 A7 A10 A12 A15 DU A20 A21 D A4 A5 A11 RESET DU DU A16 A17 E Q8 Q1 Q9 Q3 Q4 DU Q15 STS F BYTE Q0 Q10 Q11 Q12 DU DU OE G A23 A0 Q2 VCCQ Q5 Q6 Q14 WE CE2 DU VCC GND Q13 GND Q7 NC H 13 mm 10mm Notes: 1. Don't Use (DU) pins refer to pins that should not be connected. PIN DESCRIPTION SYMBOL PIN NAME SYMBOL PIN NAME A0 Byte Select Address STS STATUS Pin A1~A23 Address Input BYTE Byte Mode Enable Q0~Q15 Data Inputs/Outputs VPEN ERASE/PROGRAM/BLOCK Lock Enable CE0, CE1, CE2 Chip Enable Input WE Write Enable Input VCCQ Output Buffer Power Supply OE Output Enable Input VCC Device Power Supply RESET Reset/Deep Power Down mode GND Device Ground (low enable for 56-TSOP & 64-CSP) NC Pin Not Connected Internally Reset/Deep Power Down mode DU Don't Use RESET (high enable for 48-TSOP & 48-RTSOP) OCT/30/2002 4 MX28F128J3 ORDERING INFORMATION PLASTIC PACKAGE Part NO. Access Time Package type (ns) MX28F128J3TBC-15 150/25 48-TSOP MX28F128J3RBC-15 150/25 48-RTSOP MX28F128J3TC-15 150/25 56-TSOP MX28F128J3XCC-15 150/25 64-CSP OCT/30/2002 5 MX28F128J3 MACRONIX INTERNATIONAL CO., LTD. HEADQUARTERS: TEL:+886-3-578-6688 FAX:+886-3-563-2888 EUROPE OFFICE: TEL:+32-2-456-8020 FAX:+32-2-456-8021 JAPAN OFFICE: TEL:+81-44-246-9100 FAX:+81-44-246-9105 SINGAPORE OFFICE: TEL:+65-348-8385 FAX:+65-348-8096 TAIPEI OFFICE: TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 MACRONIX AMERICA, INC. TEL:+1-408-453-8088 FAX:+1-408-453-8488 CHICAGO OFFICE: TEL:+1-847-963-1900 FAX:+1-847-963-1909 http : //www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.