ETC UPD70F3102

DATA SHEET
MOS INTEGRATED CIRCUITS
µPD70F3102-33
TM
V850E/MS1
32-BIT SINGLE-CHIP MICROCONTROLLER
DESCRIPTION
The µPD70F3102-33 is a product that substitutes the internal mask ROM of the µPD703102-33 with flash
memory. This enables users to perform on-board program writing and erasure, enabling effective evaluation during
system development, small-lot production of multiple devices, and rapid production start, and quick development and
time-to-market.
A version using a 3.3 V power supply for external pins, the µPD70F3102A-33, is also available.
Detailed function descriptions are provided in the following user’s manuals. Be sure to read them before
designing.
V850E/MS1 User’s Manual Hardware:
U12688E
V850E/MS1 User’s Manual Architecture: U12197E
FEATURES
• Compatible with µPD703102-33
Can be replaced by the µPD703102-33 with internal mask ROM for mass production
• Internal flash memory: 128 KB
ORDERING INFORMATION
Part Number
Package
µPD70F3102GJ-33-8EU
144-pin plastic LQFP (fine pitch) (20 × 20)
µPD70F3102GJ-33-UEN
Note
144-pin plastic LQFP (fine pitch) (20 × 20)
Note Under development
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. U13844EJ3V0DS00 (3rd edition)
Date Published May 2001 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999
µPD70F3102-33
PIN CONFIGURATION (TOP VIEW)
144-pin plastic LQFP (fine pitch) (20 × 20)
• µPD70F3102GJ-33-8EU
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
113
112
111
110
109
VDD
D0/P40
D1/P41
D2/P42
D3/P43
D4/P44
D5/P45
D6/P46
D7/P47
VSS
D8/P50
D9/P51
D10/P52
D11/P53
D12/P54
D13/P55
D14/P56
D15/P57
HVDD
A0/PA0
A1/PA1
A2/PA2
A3/PA3
A4/PA4
A5/PA5
A6/PA6
A7/PA7
VSS
A8/PB0
A9/PB1
A10/PB2
A11/PB3
A12/PB4
A13/PB5
A14/PB6
A15/PB7
• µPD70F3102GJ-33-UEN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
108
107
106
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
73
NMI/P20
P21
TXD0/SO0/P22
RXD0/SI0/P23
SCK0/P24
TXD1/SO1/P25
RXD1/SI1/P26
SCK1/P27
VDD
INTP133/SCK2/P37
INTP132/SI2/P36
INTP131/SO2/P35
INTP130/P34
TI13/P33
TCLR13/P32
TO131/P31
TO130/P30
INTP143/SCK3/P117
INTP142/SI3/P116
INTP141/SO3/P115
INTP140/P114
TI14/P113
TCLR14/P112
TO141/P111
TO140/P110
CVDD
X2
X1
CVSS
CKSEL
MODE0
MODE1
MODE2
MODE3/VPP
RESET
INTP153/ADTRG/P127
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
INTP103/DMARQ3/P07
INTP102/DMARQ2/P06
INTP101/DMARQ1/P05
INTP100/DMARQ0/P04
TI10/P03
TCLR10/P02
TO101/P01
TO100/P00
VSS
INTP113/DMAAK3/P17
INTP112/DMAAK2/P16
INTP111/DMAAK1/P15
INTP110/DMAAK0/P14
TI11/P13
TCLR11/P12
TO111/P11
TO110/P10
INTP123/TC3/P107
INTP122/TC2/P106
INTP121/TC1/P105
INTP120/TC0/P104
TI12/P103
TCLR12/P102
TO121/P101
TO120/P100
ANI7/P77
ANI6/P76
ANI5/P75
ANI4/P74
ANI3/P73
ANI2/P72
ANI1/P71
ANI0/P70
AVDD
AVSS
AVREF
2
Data Sheet U13844EJ3V0DS
A16/P60
A17/P61
A18/P62
A19/P63
A20/P64
A21/P65
A22/P66
A23/P67
HVDD
CS0/RAS0/P80
CS1/RAS1/P81
CS2/RAS2/P82
CS3/RAS3/P83
CS4/RAS4/IOWR/P84
CS5/RAS5/IORD/P85
CS6/RAS6/P86
CS7/RAS7/P87
LCAS/LWR/P90
UCAS/UWR/P91
RD/P92
WE/P93
BCYST/P94
OE/P95
HLDAK/P96
HLDRQ/P97
VSS
REFRQ/PX5
WAIT/PX6
CLKOUT/PX7
TO150/P120
TO151/P121
TCLR15/P122
TI15/P123
INTP150/P124
INTP151/P125
INTP152/P126
µPD70F3102-33
PIN IDENTIFICATION
A0 to A23:
Address bus
P50 to P57:
Port 5
ADTRG:
AD trigger input
P60 to P67:
Port 6
ANI0 to ANI7:
Analog input
P70 to P77:
Port 7
AVDD:
Analog power supply
P80 to P87:
Port 8
AVREF:
Analog reference voltage
P90 to P97:
Port 9
AVSS:
Analog ground
P100 to P107:
Port 10
BCYST:
Bus cycle start timing
P110 to P117:
Port 11
CKSEL:
Clock generator operating mode
P120 to P127:
Port 12
select
PA0 to PA7:
Port A
CLKOUT:
Clock output
PB0 to PB7:
Port B
CS0 to CS7:
Chip select
PX5 to PX7:
Port X
CVDD:
Clock generator power supply
RAS0 to RAS7:
Row address strobe
CVSS:
Clock generator
RD:
Read
D0 to D15:
Data bus
REFRQ:
Refresh request
DMAAK0 to DMAAK3: DMA acknowledge
RESET:
Reset
DMARQ0 to DMARQ3: DMA request
RXD0, RXD1:
Receive data
HLDAK:
Hold acknowledge
SCK0 to SCK3:
Serial clock
HLDRQ:
Hold request
SI0 to SI3:
Serial input
HVDD:
Power supply for external pins
SO0 to SO3:
Serial output
TC0 to TC3:
Terminal count signal
INTP100 to INTP103,
INTP110 to INTP113,
TCLR10 to TCLR15: Timer clear
INTP120 to INTP123,
TI10 to TI15:
INTP130 to INTP133,
TO100, TO101,
INTP140 to INTP143,
TO110, TO111,
Timer input
INTP150 to INTP153:
Interrupt request from peripherals
TO120, TO121,
IORD:
I/O read strobe
TO130, TO131,
IOWR:
I/O write strobe
TO140, TO141,
LCAS:
Lower column address strobe
TO150, TO151:
Timer output
LWR:
Lower write strobe
TXD0, TXD1:
Transmit data
MODE0 to MODE3:
Mode
UCAS:
Upper column address strobe
NMI:
Non-maskable interrupt request
UWR:
Upper write strobe
OE:
Output enable
VDD:
Power supply for internal unit
P00 to P07:
Port 0
VPP:
Programming power supply
P10 to P17:
Port 1
VSS:
Ground
P20 to P27:
Port 2
WAIT:
Wait
P30 to P37:
Port 3
WE:
Write enable
P40 to P47:
Port 4
X1, X2:
Crystal
Data Sheet U13844EJ3V0DS
3
µPD70F3102-33
INTERNAL BLOCK DIAGRAM
HLDRQ
NMI
INTP100 to INTP103,
INTP110 to INTP113,
INTP120 to INTP123,
INTP130 to INTP133,
INTP140 to INTP143,
INTP150 to INTP153
CPU
Flash memory
BCU
HLDAK
INTC
CS0 to CS7/RAS0 to RAS7
IOWR
Instruction queue
IORD
Multiplier
(32 × 32 → 64)
128 KB
DRAMC
REFRQ
BCYST
PC
TO100, TO101,
TO110, TO111,
TO120, TO121,
TO130, TO131,
TO140, TO141,
TO150, TO151
WE
RD
Barrel
shifter
RPU
RAM
System registers
4 KB
General-purpose
registers
(32 bits × 32)
Page ROM
controller
OE
UWR/UCAS
LWR/LCAS
TCLR10 to TCLR15
TI10 to TI15
WAIT
ALU
A0 to A23
D0 to D15
DMAC
DMARQ0 to DMARQ3
DMAAK0 to DMAAK3
SIO
SO0/TXD0
SI0/RXD0
SCK0
TC0 to TC3
UART0/CSI0
BRG0
SO1/TXD1
SI1/RXD1
SCK1
CKSEL
Port
UART1/CSI1
CLKOUT
CG
SO3
SI3
SCK3
HVDD
P00 to P07
P20
P10 to P17
P21 to P27
P30 to P37
P40 to P47
P50 to P57
P60 to P67
P70 to P77
P80 to P87
P90 to P97
P100 to P107
PA0 to PA7
P110 to P117
BRG2
P120 to P127
CSI2
PB0 to PB7
SO2
SI2
SCK2
PX5 to PX7
BRG1
X1
X2
CVDD
CVSS
System
controller
MODE0 to MODE3
RESET
VPP
CSI3
VDD
ANI0 to ANI7
AVREF
AVSS
AVDD
ADTRG
4
VSS
ADC
Data Sheet U13844EJ3V0DS
µPD70F3102-33
CONTENTS
1. DIFFERENCES AMONG PRODUCTS....................................................................................................6
1.1
Differences Between µPD70F3102-33 and µPD703102-33........................................................................6
1.2
Differences Between µPD70F3102-33 and µPD70F3102A-33 ...................................................................6
2. PIN FUNCTIONS .....................................................................................................................................7
2.1
Port Pins .......................................................................................................................................................7
2.2
Non-Port Pins .............................................................................................................................................10
2.3
Pin I/O Circuit Types and Recommended Connection of Unused Pins ................................................14
3. FLASH MEMORY PROGRAMMING ....................................................................................................17
3.1
Selection of Communication Mode ..........................................................................................................17
3.2
Flash Memory Programming Functions ..................................................................................................18
3.3
Connecting the Dedicated Flash Programmer ........................................................................................18
4. ELECTRICAL SPECIFICATIONS .........................................................................................................19
4.1
Normal Operation Mode ............................................................................................................................19
4.2
Flash Memory Programming Mode ..........................................................................................................74
5. PACKAGE DRAWINGS ........................................................................................................................77
6. RECOMMENDED SOLDERING CONDITIONS....................................................................................79
Data Sheet U13844EJ3V0DS
5
µPD70F3102-33
1. DIFFERENCES AMONG PRODUCTS
1.1
Differences Between µPD70F3102-33 and µPD703102-33
µPD70F3102-33
Product
µPD703102-33
Item
Internal ROM
Flash memory
Mask ROM
Flash memory programming pin
Provided (VPP)
None
Flash memory programming mode
Provided (MODE0 = L, MODE1 = H,
MODE2 = L, MODE3/VPP = 7.8 V)
None
Electrical specifications
Current consumption etc. differs (see individual data sheets).
Others
Circuit scale and master layout differ, thus noise immunity, noise radiation, etc. differ.
Cautions
1. There are differences in noise immunity and noise radiation between the flash memory
version and mask ROM version.
When pre-producing an application set with the flash
memory version and then mass-producing it with the mask ROM version, be sure to conduct
sufficient evaluation for commercial samples (not engineering samples) of the mask ROM
version.
2. When switching from the flash memory version to the mask ROM version, write the same
code to the free area of the internal ROM.
1.2
Differences Between µPD70F3102-33 and µPD70F3102A-33
µPD70F3102-33
Product
µPD70F3102A-33
Item
6
HVDD
4.5 to 5.5 V
3.0 to 3.6 V
Electrical specifications
See individual data sheets.
Package
• 144-pin plastic LQFP (fine pitch) (20 × 20)
Data Sheet U13844EJ3V0DS
• 157-pin plastic FBGA (14 × 14)
• 144-pin plastic LQFP (fine pitch) (20 × 20)
µPD70F3102-33
2. PIN FUNCTIONS
2.1
Port Pins
(1/3)
Pin Name
P00
I/O
I/O
P01
P02
Function
Port 0
8-bit I/O port
Input/output can be specified in 1-bit units.
Alternate Function
TO100
TO101
TCLR10
P03
TI10
P04
INTP100/DMARQ0
P05
INTP101/DMARQ1
P06
INTP102/DMARQ2
P07
INTP103/DMARQ3
P10
I/O
P11
P12
Port 1
8-bit I/O port
Input/output can be specified in 1-bit units.
TO110
TO111
TCLR11
P13
TI11
P14
INTP110/DMAAK0
P15
INTP111/DMAAK1
P16
INTP112/DMAAK2
P17
INTP113/DMAAK3
P20
Input
P21
I/O
P22
P23
P24
Port 2
P20 is an input-only port.
When a valid edge is input, it operates as an NMI input. The status of
the NMI input is shown by bit 0 of register P2.
P21 to P27 is a 7-bit I/O port.
Input/output can be specified in 1-bit units.
NMI
−
TXD0/SO0
RXD0/SI0
SCK0
P25
TXD1/SO1
P26
RXD1/SI1
P27
SCK1
P30
I/O
P31
P32
Port 3
8-bit I/O port
Input/output can be specified in 1-bit units.
TO130
TO131
TCLR13
P33
TI13
P34
INTP130
P35
INTP131/SO2
P36
INTP132/SI2
P37
INTP133/SCK2
P40 to P47
I/O
Port 4
8-bit I/O port
Input/output can be specified in 1-bit units.
Data Sheet U13844EJ3V0DS
D0 to D7
7
µPD70F3102-33
(2/3)
Pin Name
I/O
P50 to P57
I/O
Port 5
8-bit I/O port
Input/output can be specified in 1-bit units.
D8 to D15
P60 to P67
I/O
Port 6
8-bit I/O port
Input/output can be specified in 1-bit units.
A16 to A23
P70 to P77
Input
Port 7
8-bit input-only port
ANI0 to ANI7
Port 8
8-bit I/O port
Input/output can be specified in 1-bit units.
CS0/RAS0
P80
I/O
P81
P82
Alternate Function
CS1/RAS1
CS2/RAS2
P83
CS3/RAS3
P84
CS4/RAS4/IOWR
P85
CS5/RAS5/IORD
P86
CS6/RAS6
P87
CS7/RAS7
P90
I/O
P91
P92
Port 9
8-bit I/O port
Input/output can be specified in 1-bit units
LCAS/LWR
UCAS/UWR
RD
P93
WE
P94
BCYST
P95
OE
P96
HLDAK
P97
HLDRQ
P100
P101
P102
8
Function
I/O
Port 10
8-bit I/O port
Input/output can be specified in 1-bit units.
TO120
TO121
TCLR12
P103
TI12
P104
INTP120/TC0
P105
INTP121/TC1
P106
INTP122/TC2
P107
INTP123/TC3
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(3/3)
Pin Name
P110
I/O
I/O
P111
P112
Function
Port 11
8-bit I/O port
Input/output can be specified in 1-bit units.
Alternate Function
TO140
TO141
TCLR14
P113
TI14
P114
INTP140
P115
INTP141/SO3
P116
INTP142/SI3
P117
INTP143/SCK3
P120
I/O
P121
P122
Port 12
8-bit I/O port
Input/output can be specified in 1-bit units.
TO150
TO151
TCLR15
P123
TI15
P124
INTP150
P125
INTP151
P126
INTP152
P127
INTP153/ADTRG
PA0
I/O
PA1
PA2
Port A
8-bit I/O port
Input/output can be specified in 1-bit units.
A0
A1
A2
PA3
A3
PA4
A4
PA5
A5
PA6
A6
PA7
A7
PB0
I/O
PB1
PB2
Port B
8-bit I/O port
Input/output can be specified in 1-bit units.
A8
A9
A10
PB3
A11
PB4
A12
PB5
A13
PB6
A14
PB7
A15
PX5
PX6
PX7
I/O
Port X
3-bit I/O port
Input/output can be specified in 1-bit units.
Data Sheet U13844EJ3V0DS
REFRQ
WAIT
CLKOUT
9
µPD70F3102-33
2.2
Non-Port Pins
(1/4)
Pin Name
TO100
I/O
Output
Function
Pulse signal output of timers 10 to 15
Alternate Function
P00
TO101
P01
TO110
P10
TO111
P11
TO120
P100
TO121
P101
TO130
P30
TO131
P31
TO140
P110
TO141
P111
TO150
P120
TO151
P121
TCLR10
Input
External clear signal input of timers 10 to 15
P02
TCLR11
P12
TCLR12
P102
TCLR13
P32
TCLR14
P112
TCLR15
P122
TI10
Input
External count clock input of timers 10 to 15
P03
TI11
P13
TI12
P103
TI13
P33
TI14
P113
TI15
P123
INTP100
Input
INTP101
External maskable interrupt request input, or timer 10 external capture
trigger input
P04/DMARQ0
P05/DMARQ1
INTP102
P06/DMARQ2
INTP103
P07/DMARQ3
INTP110
Input
INTP111
External maskable interrupt request input, or timer 11 external capture
trigger input
P14/DMAAK0
P15/DMAAK1
INTP112
P16/DMAAK2
INTP113
P17/DMAAK3
INTP120
INTP121
Input
External maskable interrupt request input, or timer 12 external capture
trigger input
P104/TC0
P105/TC1
INTP122
P106/TC2
INTP123
P107/TC3
10
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(2/4)
Pin Name
INTP130
I/O
Input
INTP131
Function
External maskable interrupt request input, or timer 13 external capture
trigger input
Alternate Function
P34
P35/SO2
INTP132
P36/SI2
INTP133
P37/SCK2
INTP140
Input
INTP141
External maskable interrupt request input, or timer 14 external capture
trigger input
P114
P115/SO3
INTP142
P116/SI3
INTP143
P117/SCK3
INTP150
Input
INTP151
External maskable interrupt request input, or timer 15 external capture
trigger input
P124
P125
INTP152
P126
INTP153
P127/ADTRG
SO0
Output
CSI0 to CSI3 serial transmission data output (3-wire)
P22/TXD0
SO1
P25/TXD1
SO2
P35/INTP131
SO3
P115/INTP141
SI0
Input
CSI0 to CSI3 serial reception data input (3-wire)
P23/RXD0
SI1
P26/RXD1
SI2
P36/INTP132
SI3
P116/INTP142
SCK0
I/O
CSI0 to CSI3 serial clock input/output (3-wire)
P24
SCK1
P27
SCK2
P37/INTP133
SCK3
P117/INTP143
TXD0
Output
UART0 and UART1 serial transmission data output
TXD1
RXD0
P25/SO1
Input
UART0 and UART1 serial reception data input
RXD1
D0 to D7
P23/SI0
P26/SI1
I/O
16-bit data bus for external memory
D8 to D15
A0 to A7
P22/SO0
P40 to P47
P50 to P57
Output
24-bit address bus for external memory
PA0 to PA7
A8 to A15
PB0 to PB7
A16 to A23
P60 to P67
LWR
Output
External data bus lower byte write enable signal output
P90/LCAS
UWR
Output
External data bus upper byte write enable signal output
P91/UCAS
RD
Output
External data bus read strobe signal output
P92
WE
Output
Write enable signal output for DRAM
P93
OE
Output
Output enable signal output for DRAM
P95
Data Sheet U13844EJ3V0DS
11
µPD70F3102-33
(3/4)
Pin Name
I/O
Function
Alternate Function
LCAS
Output
Column address strobe signal output for lower data of DRAM
P90/LWR
UCAS
Output
Column address strobe signal output for higher data of DRAM
P91/UWR
RAS0 to RAS3
Output
Row address strobe signal output for DRAM
P80/CS0 to P83/CS3
RAS4
P84/CS4/IOWR
RAS5
P85/CS5/IORD
RAS6
P86/CS6
RAS7
P87/CS7
BCYST
Output
Strobe signal output indicating start of bus cycle
P94
CS0 to CS3
Output
Chip select signal output
P80/RAS0 to
P83/RAS3
CS4
P84/RAS4/IOWR
CS5
P85/RAS5/IORD
CS6
P86/RAS6
CS7
P87/RAS7
WAIT
Input
Control signal input that inserts a wait in the bus cycle
PX6
REFRQ
Output
Refresh request signal output for DRAM
PX5
IOWR
Output
DMA write strobe signal output
P84/RAS4/CS4
IORD
Output
DMA read strobe signal output
P85/RAS5/CS5
DMA request signal input
P04/INTP100 to
P07/INTP103
DMARQ0 to
DMARQ3
Input
DMAAK0 to
DMAAK3
Output
DMA acknowledge signal output
P14/INTP110 to
P17/INTP113
TC0 to TC3
Output
DMA termination (terminal count) signal output
P104/INTP120 to
P107/INTP123
HLDAK
Output
Bus hold acknowledge output
P96
HLDRQ
Input
Bus hold request input
P97
ANI0 to ANI7
Input
Analog input to A/D converter
P70 to P77
NMI
Input
Non-maskable interrupt request input
P20
System clock output
PX7
CLKOUT
Output
CKSEL
Input
Input that specifies the clock generator's operation mode
−
MODE0 to
MODE2
Input
Operation mode specification
−
MODE3
VPP
RESET
Input
System reset input
−
X1
Input
−
X2
−
Connecting system clock resonator. In the case of an external clock, it is
input to X1.
−
ADTRG
Input
A/D converter external trigger input
AVREF
Input
Reference voltage applied to A/D converter
−
AVDD
−
Positive power supply for A/D converter
−
12
Data Sheet U13844EJ3V0DS
P127/INTP153
µPD70F3102-33
(4/4)
Pin Name
I/O
Function
Alternate Function
AVSS
−
Ground potential for A/D converter
−
CVDD
−
Positive power supply for the dedicated clock generator
−
CVSS
−
Ground potential for dedicated clock generator
−
VDD
−
Positive power supply (internal unit power supply)
−
HVDD
−
Positive power supply (external pin power supply)
−
VSS
−
Ground potential
−
VPP
−
High-voltage application pin during program write/verify
Data Sheet U13844EJ3V0DS
MODE3
13
µPD70F3102-33
2.3
Pin I/O Circuit Types and Recommended Connection of Unused Pins
Table 2-1 shows the I/O circuit type of each pin and the recommended connection of unused pins, and Figure 2-1
shows the schematic circuit diagram for each I/O circuit type.
In the case of connection to VDD or VSS via a resistor, connection of a resistor of 1 to 10 kΩ is recommended.
Table 2-1. Pin I/O Circuit Types and Recommended Connection of Unused Pins (1/2)
Pin
I/O Circuit
Type
P00/TO100, P01/TO101
5
P02/TCLR10, P03/TI10
5-K
Recommended Connection of Unused Pins
Input: Independently connect to HVDD or VSS via a resistor.
Output: Leave open.
P04/INTP100/DMARQ0 to
P07/INTP103/DMARQ3
P10/TO110, P11/TO111
5
P12/TCLR11, P13/TI11
5-K
P14/INTP110/DMAAK0 to
P17/INTP113/DMAAK3
P20/NMI
2
Connect directly to VSS.
P21
5
Input: Independently connect to HVDD or VSS via a resistor.
Output: Leave open.
P22/TXD0/SO0
P23/RXD0/SI0
5-K
P24/SCK0
P25/TXD1/SO1
5
P26/RXD1/SI1
5-K
P27/SCK1
P30/TO130, P31/TO131
5
P32/TCLR13, P33/TI13
5-K
P34/INTP130
P35/INTP131/SO2
P36/INTP132/SI2
P37/INTP133/SCK2
P40/D0 to P47/D7
5
P50/D8 to P57/D15
P60/A16 to P67/A23
P70/ANI0 to P77/ANI7
14
9
Connect directly to VSS.
Data Sheet U13844EJ3V0DS
µPD70F3102-33
Table 2-1. Pin I/O Circuit Types and Recommended Connection of Unused Pins (2/2)
Pin
I/O Circuit
Type
P80/CS0/RAS0 to P83/CS3/RAS3
5
Input: Independently connect to HVDD or VSS via a resistor.
Output: Leave open.
P100/TO120, P101/TO121
5
P102/TCLR12, P103/TI12
5-K
Input: Independently connect to HVDD or VSS via a resistor.
Output: Leave open.
P84/CS4/RAS4/IOWR,
P85/CS5/RAS5/IORD
Recommended Connection of Unused Pins
P86/CS6/RAS6, P87/CS7/RAS7
P90/LCAS/LWR
P91/UCAS/UWR
P92/RD
P93/WE
P94/BCYST
P95/OE
P96/HLDAK
P97/HLDRQ
P104/INTP120/TC0 to
P107/INTP123/TC3
P110/TO140, P111/TO141
5
P112/TCLR14, P113/TI14
5-K
P114/INTP140
P115/INTP141/SO3
P116/INTP142/SI3
P117/INTP143/SCK3
P120/TO150, P121/TO151
5
P122/TCLR15, P123/TI15
5-K
P124/INTP150 to P126/INTP152
P127/INTP153/ADTRG
PA0/A0 to PA7/A7
5
PB0/A8 to PB7/A15
PX5/REFRQ
PX6/WAIT
PX7/CLKOUT
CKSEL
1
RESET
2
−
MODE0 to MODE2
MODE3/VPP
Connect to VSS via a resistor (RVPP).
AVREF, AVSS
−
Connect directly to VSS.
AVDD
−
Connect directly to HVDD.
Data Sheet U13844EJ3V0DS
15
µPD70F3102-33
Figure 2-1. Pin I/O Circuits
Type 5-K
Type 1
VDD
VDD
Data
P-ch
IN/OUT
P-ch
IN
Output
disable
N-ch
N-ch
Input
enable
Type 9
Type 2
P-ch
IN
N-ch
IN
+
–
Comparator
VREF (threshold voltage)
Input enable
Schmitt-triggered input with hysteresis characteristics
Type 5
VDD
Data
P-ch
IN/OUT
Output
disable
N-ch
Input
enable
Caution Replace VDD in the circuit diagrams with HVDD.
16
Data Sheet U13844EJ3V0DS
µPD70F3102-33
3. FLASH MEMORY PROGRAMMING
The following two flash memory programming methods are available.
(1) On-board programming
The program is written to the flash memory using a dedicated flash programmer after the µPD70F3102-33 is
mounted on the target board. Install the connectors, etc. required for communication with the dedicated flash
programmer on the target board.
(2) Off-board programming
The program is written to the flash memory using a dedicated adapter before the µPD70F3102-33 is mounted on
the target board.
3.1
Selection of Communication Mode
Writing to the flash memory is done via serial communication using the dedicated flash programmer. Select one
of the communication modes listed in Table 3-1. Base your selection of the communication mode on the selection
format shown in Table 3-1. Refer to the number of VPP pulses shown in Table 3-1 when selecting the communication
mode.
Table 3-1. Communication Modes
Communication Mode
Pins Used
Number of VPP Pulses
CSI0
SO0 (serial data output)
SI0 (serial data input)
SCK0 (serial clock input)
0
UART0
TXD0 (serial data output)
RXD0 (serial data input)
8
Figure 3-1. Communication Mode Selection Format
7.8 V
VPP
VDD
VSS
VDD
RESET
VSS
Data Sheet U13844EJ3V0DS
17
µPD70F3102-33
3.2
Flash Memory Programming Functions
Flash memory programming is performed by sending and receiving commands and data according to the selected
communication mode. Table 3-2 shows the main flash memory programming functions.
Table 3-2. Main Flash Memory Programming Functions
Function
Description
Batch erasure
Erases the contents of the entire memory.
Batch blank check
Checks whether the entire memory has been erased.
Data write
Writes data to flash memory based on the write start address and the number of bytes to be written.
Batch verify
Compares the contents of the entire memory with the input data.
3.3
Connecting the Dedicated Flash Programmer
The connection of the dedicated flash programmer to the µPD70F3102-33 differs depending on the
communication mode. Figures 3-2 and 3-3 show the various connection types.
Figure 3-2. Connection of Dedicated Flash Programmer for CSI0 Mode
Dedicated flash programmer
CLK
µ PD70F3102-33
CLK
VPP
VPP
VDD
VDD
RESET
RESET
SCK
SCK0
SO
SI0
SI
SO0
VSS
VSS
Figure 3-3. Connection of Dedicated Flash Programmer for UART0 Mode
Dedicated flash programmer
CLK
VPP
VPP
VDD
VDD
RESET
RESET
TxD
RXD0
RxD
TXD0
VSS
18
µ PD70F3102-33
CLK
VSS
Data Sheet U13844EJ3V0DS
µPD70F3102-33
4. ELECTRICAL SPECIFICATIONS
4.1
Normal Operation Mode
Absolute Maximum Ratings (TA = 25°C)
Parameter
Supply voltage
Symbol
Ratings
Unit
VDD pin
−0.5 to +4.6
V
HVDD
HVDD pin, HVDD ≥ VDD
−0.5 to +7.0
V
CVDD
CVDD pin
−0.5 to +4.6
V
CVSS
CVSS pin
−0.5 to +0.5
VDD
Input voltage
Conditions
AVDD
AVDD pin
AVSS
AVSS pin
VI
V
Note
−0.5 to HVDD + 0.5
−0.5 to +0.5
Except X1 pin, MODE3/VPP pin
V
Note
−0.5 to HVDD + 0.5
Note
MODE3/VPP pin
MODE3/VPP pin in flash memory
programming mode
V
V
−0.5 to VDD + 0.5
V
−0.5 to +11.0
V
−0.5 to VDD + 1.0Note
V
Clock input voltage
VK
X1, VDD = 3.0 to 3.6 V
Output current, low
IOL
1 pin
4.0
mA
Total of all pins
100
mA
1 pin
−4.0
mA
Total of all pins
−100
mA
Output current, high
Output voltage
IOH
VO
Analog input voltage
A/D converter reference input
voltage
VIAN
AVREF
HVDD = 5.0 V ±10%
P70/ANI0 to
P77/ANI7 pins
AVDD > HVDD
HVDD ≥ AVDD
AVDD > HVDD
HVDD ≥ AVDD
−0.5 to HVDD + 0.5Note
V
Note
V
Note
V
Note
V
Note
V
−0.5 to HVDD + 0.5
−0.5 to AVDD + 0.5
−0.5 to HVDD + 0.5
−0.5 to AVDD + 0.5
Operating ambient temperature
TA
−40 to +85
°C
Storage temperature
Tstg
−65 to +125
°C
Note Use the product under conditions that ensure the absolute maximum ratings (MAX. values) of respective
supply voltages are not exceeded.
Cautions
1. Do not directly connect the output pins (or I/O pins) of IC products to each other, to VDD, VCC,
and GND. Open-drain pins and open-collector pins, however, can be directly connected to
each other. Direct connection of the output pins between an IC product and an external
circuit is possible, if the output pins can be set to a high-impedance state and the output
timing of the external circuit is designed to avoid output conflict.
2. Product quality may suffer if the absolute maximum rating is exceeded even momentarily for
any parameter. That is, the absolute maximum ratings are rated values at which the product
is on the verge of suffering physical damage, and therefore the product must be used under
conditions that ensure that the absolute maximum ratings are not exceeded.
The ratings and conditions indicated for DC characteristics and AC characteristics
represent the quality assurance range during normal operation.
Data Sheet U13844EJ3V0DS
19
µPD70F3102-33
Capacitance (TA = 25°C, VDD = HVDD = CVDD = VSS = 0 V)
Parameter
Symbol
Conditions
Input capacitance
CI
I/O capacitance
CIO
fc = 1 MHz
Unmeasured pins returned to 0 V
Output capacitance
CO
MIN.
TYP.
MAX.
Unit
15
pF
15
pF
15
pF
Operating Conditions
Operation
Mode
Direct mode
PLL modeNote
Internal Operation Clock Frequency
(fX)
Operating Ambient Temperature
(TA)
Supply Voltage (VDD, HVDD)
2 to 33 MHz
−40 to +85°C
VDD = 3.0 to 3.6 V,
HVDD = 5.0 V ±10%
20 to 33 MHzNote 2
−40 to +85°C
VDD = 3.0 to 3.6 V,
HVDD = 5.0 V ±10%
1
Notes 1. The internal operation clock frequency in PLL mode is the value during operation with a ×5 clock.
When using a ×1 or ×1/2 clock by setting the CKDIVn (n = 0, 1) bit in the CKC register, operation is
possible at a frequency of 20 MHz or lower.
2. Set the input clock frequency used in PLL mode to 4.0 to 6.6 MHz.
20
Data Sheet U13844EJ3V0DS
µPD70F3102-33
Recommended Oscillator
(a) Connection of ceramic resonator (TA = −40 to +85°C)
(i) Murata Mfg. Co., Ltd. (TA = −40 to +85°C)
X1
X2
Rd
C2
C1
Type
Surface
mount
Lead
Product Name
Oscillation
Frequency
fXX (MHz)
C1 (pF)
C2 (pF)
Rd (kΩ)
MIN. (V)
MAX. (V)
Oscillation
Stabilization
Time (MAX.)
TOST (ms)
Recommended Circuit
Constant
Oscillation Voltage
Range
CSAC4.00MGC040
4.0
100
100
0
3.0
3.6
0.5
CSTCC4.00MG0H6
4.0
On-chip
On-chip
0
3.0
3.6
0.3
CSAC5.00MGC040
5.0
100
100
0
3.0
3.6
0.4
CSTCC5.00MG0H6
5.0
On-chip
On-chip
0
3.0
3.6
0.2
CSAC6.60MT
6.6
30
30
0
3.0
3.6
0.2
CSTCC6.60MG0H6
6.6
On-chip
On-chip
0
3.0
3.6
0.1
CSAC8.00MT
8.0
30
30
0
3.0
3.6
0.2
CSTCC8.00MG0H6
8.0
On-chip
On-chip
0
3.0
3.6
0.3
CSA4.00MG040
4.0
100
100
0
3.0
3.6
0.5
CST4.00MGW040
4.0
On-chip
On-chip
0
3.0
3.6
0.5
CSA5.00MG040
5.0
100
100
0
3.0
3.6
0.5
CST5.00MGW040
5.0
On-chip
On-chip
0
3.0
3.6
0.5
CSA6.60MTZ
6.6
30
30
0
3.0
3.6
0.1
CST6.60MTW
6.6
On-chip
On-chip
0
3.0
3.6
0.1
CSA8.00MTZ
8.0
30
30
0
3.0
3.6
0.1
CST8.00MTW
8.0
On-chip
On-chip
0
3.0
3.6
0.1
Cautions
1. Connect the oscillator as close to the X1 and X2 pins as possible.
2. Do not wire any other signal lines in the area indicated by the broken lines.
3. Thoroughly evaluate the matching between the µPD70F3102-33 and the resonator.
Data Sheet U13844EJ3V0DS
21
µPD70F3102-33
(ii) TDK Corporation (TA = −40 to +85°C)
X1
X2
Rd
C1
Manufacturer
TDK
Product Name
Oscillation
Frequency
fXX (MHz)
C2
Recommended Circuit
Constant
Oscillation
Stabilization Time
(MAX.)
TOST (ms)
MAX. (V)
Oscillation Voltage
Range
C1 (pF)
C2 (pF)
Rd (kΩ)
MIN. (V)
CCR4.0MC3
4.0
On-chip
On-chip
0
3.0
3.6
0.17
CCR5.0MC3
5.0
On-chip
On-chip
0
3.0
3.6
0.15
CCR8.0MC5
8.0
On-chip
On-chip
0
3.0
3.6
0.11
Cautions 1. Connect the oscillator as close to the X1 and X2 pins as possible.
2. Do not wire any other signal lines in the area indicated by the broken lines.
3. Thoroughly evaluate the matching between the µPD70F3102-33 and the resonator.
(iii) Kyocera Corporation (TA = −20 to +80°C)
X1
X2
Rd
C1
Manufacturer
Kyocera
Product Name
Oscillation
Frequency
fXX (MHz)
C2
Recommended Circuit
Constant
Oscillation
Stabilization Time
(MAX.)
TOST (ms)
MAX. (V)
Oscillation Voltage
Range
C1 (pF)
C2 (pF)
Rd (kΩ)
MIN. (V)
PBRC5.00BR-A
5.0
On-chip
On-chip
0
3.0
3.6
0.06
PBRC6.00BR-A
6.0
On-chip
On-chip
0
3.0
3.6
0.06
PBRC6.60BR-A
6.6
On-chip
On-chip
0
3.0
3.6
0.06
Cautions 1. Connect the oscillator as close to the X1 and X2 pins as possible.
2. Do not wire any other signal lines in the area indicated by the broken lines.
3. Thoroughly evaluate the matching between the µPD70F3102-33 and the resonator.
22
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(b) External clock input (TA = −40 to +85°C)
X1
X2
Open
External clock
Caution Input a CMOS level voltage to the X1 pin.
Cautions when turning on/off the power
The µPD70F3102-33 is configured with power supply pins for the internal unit (VDD) and for the external pins
(HVDD).
The operation guaranteed range is VDD = CVDD = 3.0 to 3.6 V, HVDD = 5.0 V ±10%. The input and output state of
ports may be undefined when the voltage exceeds this range.
Data Sheet U13844EJ3V0DS
23
µPD70F3102-33
DC Characteristics (TA = −40 to +85°C, VDD = CVDD = 3.0 to 3.6 V, HVDD = 5.0 V ±10%, VSS = 0 V) (1/2)
Parameter
Input voltage, high
Symbol
Conditions
MAX.
Unit
2.2
HVDD + 0.3
V
0.8HVDD
HVDD + 0.3
V
Except Notes 1 and 2
−0.5
+0.8
V
Note 1
−0.5
0.2HVDD
V
Direct mode
0.8VDD
VDD + 0.3
V
PLL mode
0.8VDD
VDD + 0.3
V
Direct mode
−0.3
0.15VDD
V
PLL mode
−0.3
0.15VDD
V
Except Note 1
VIH
Note 1
Input voltage, low
Clock input voltage, high
Clock input voltage, low
Schmitt-triggered input
threshold voltage
Schmitt-triggered input
hysteresis width
Output voltage, high
VIL
VXH
VXL
HVT
X1 pin
X1 pin
MIN.
TYP.
+
Note 1, rising edge
3.0
V
−
Note 1, falling edge
2.0
V
+
Note 1
HVT
HVT
−HVT−
VOH
0.5
V
IOH = −2.5 mA
0.7HVDD
V
IOH = −100 µA
HVDD − 0.4
V
Output voltage, low
VOL
IOL = 2.5 mA
0.45
V
Input leakage current, high
ILIH
VI = HVDD, except Note 2
10
µA
Input leakage current, low
ILIL
VI = 0 V, except Note 2
−10
µA
Output leakage current, high
ILOH
VO = HVDD
10
µA
Output leakage current, low
ILOL
VO = 0 V
−10
µA
Notes 1. P04/INTP100/DMARQ0 to P07/INTP103/DMARQ3, P14/INTP110/DMAAK0 to P17/INTP113/DMAAK3,
P34/INTP130, P35/INTP131/SO2, P36/INTP132/SI2, P37/INTP133/SCK2,
P104/INTP120/TC0 to P107/INTP123/TC3, P114/INTP140, P115/INTP141/SO3, P116/INTP142/SI3,
P117/INTP143/SCK3, P124/INTP150 to P126/INTP152, P127/INTP153/ADTRG, P02/TCLR10,
P12/TCLR11, P32/TCLR13, P102/TCLR12, P112/TCLR14, P122/TCLR15, P03/TI10, P13/TI11,
P33/TI13, P103/TI12, P113/TI14, P123/TI15, P20/NMI, P23/RXD0/SI0, P24/SCK0, P26/RXD1/SI1,
P27/SCK1, MODE0 to MODE2, RESET
2. When using the P70/AN10 to P77/ANI7 pins as analog inputs.
Remark TYP. values are reference values for when TA = 25°C, VDD = CVDD = 3.3 V, HVDD = 5.0 V.
24
Data Sheet U13844EJ3V0DS
µPD70F3102-33
DC Characteristics (TA = −40 to +85°C, VDD = CVDD = 3.0 to 3.6 V, HVDD = 5.0 V ±10%, VSS = 0 V) (2/2)
Parameter
Supply
current
During normal
During HALT
During IDLE
During STOP
Symbol
IDD1
IDD2
IDD3
IDD4
Conditions
TYP.
MAX.
Unit
VDD + CVDD
2.0 × fX
4.5 × fX
mA
HVDD
1.8 × fX
3.0 × fX
mA
VDD + CVDD
1.4 × fX
3.0 × fX
mA
HVDD
0.8 × fX
1.5 × fX
mA
VDD + CVDD
3.0
10
mA
HVDD
0.5
1.0
mA
20
50
µA
600
µA
20
µA
VDD + CVDD
−40°C ≤ TA ≤ +40°C
MIN.
+40°C < TA ≤ +85°C
HVDD
10
Remarks 1. TYP. values are reference values for when TA = 25°C, VDD = CVDD = 3.3 V, HVDD = 5.0 V.
2. Direct mode: fX = 2 to 33 MHz
PLL mode:
fX = 20 to 33 MHz
3. The fX unit is MHz.
Data Sheet U13844EJ3V0DS
25
µPD70F3102-33
Data Retention Characteristics (TA = −40 to +85°C)
Parameter
Symbol
Data retention voltage
Conditions
VDDDR
STOP mode, VDD = VDDDR
STOP mode, HVDD = HVDDDR
HVDDDR
Data retention current
MIN.
IDDDR
VDD = VDDDR
MAX.
Unit
1.5
3.6
V
VDDDR
5.5
V
50
µA
600
µA
−40°C ≤ TA ≤ +40°C
TYP.
20
+40°C < TA ≤ +85°C
Supply voltage rise time
tRVD
200
µs
Supply voltage fall time
tFVD
200
µs
Supply voltage hold time
(from STOP mode setting)
tHVD
0
ms
STOP release signal input time
tDREL
0
ns
Data retention high-level input
voltage
VIHDR
Note
0.8HVDDDR
HVDDDR
V
Data retention low-level input
voltage
VILDR
Note
0
0.2HVDDDR
V
Note P04/INTP100/DMARQ0 to P07/INTP103/DMARQ3, P14/INTP110/DMAAK0 to P17/INTP113/DMAAK3,
P34/INTP130, P35/INTP131/SO2, P36/INTP132/SI2, P37/INTP133/SCK2,
P104/INTP120/TC0 to P107/INTP123/TC3, P114/INTP140, P115/INTP141/SO3, P116/INTP142/SI3,
P117/INTP143/SCK3,
P124/INTP150
to
P126/INTP152,
P127/INTP153/ADTRG,
P02/TCLR10,
P12/TCLR11, P32/TCLR13, P102/TCLR12, P112/TCLR14, P122/TCLR15, P03/TI10, P13/TI11, P33/TI13,
P103/TI12, P113/TI14, P123/TI15, P20/NMI, P23/RXD0/SI0, P24/SCK0, P26/RXD1/SI1, P27/SCK1,
MODE0 to MODE2, RESET
Remark TYP. values are reference values for when TA = 25°C.
STOP mode setting
VDDDR
VDD
tFVD
tRVD
tHVD
tDREL
HVDD
RESET (input)
NMI (input)
(released by falling edge)
VIHDR
VIHDR
NMI (input)
(released by rising edge)
VILDR
26
Data Sheet U13844EJ3V0DS
µPD70F3102-33
AC Characteristics (TA = −40 to +85°C, VDD = CVDD = 3.0 to 3.6 V, HVDD = 5.0 V ±10%, VSS = 0 V, Output Pin Load
Capacitance: CL = 50 pF)
AC Test Input Measurement Points
(a) P04/INTP100/DMARQ0 to P07/INTP103/DMARQ3, P14/INTP110/DMAAK0 to P17/INTP113/DMAAK3,
P34/INTP130,
P35/INTP131/SO2,
P107/INTP123/TC3,
P36/INTP132/SI2,
P114/INTP140,
P37/INTP133/SCK2,
P115/INTP141/SO3,
P104/INTP120/TC0
P116/INTP142/SI3,
to
P117/INTP143/SCK3,
P124/INTP150 to P126/INTP152, P127/INTP153/ADTRG, P02/TCLR10, P12/TCLR11, P32/TCLR13,
P102/TCLR12, P112/TCLR14, P122/TCLR15, P03/TI10, P13/TI11, P33/TI13, P103/TI12, P113/TI14,
P123/TI15, P20/NMI, P23/RXD0/SI0, P24/SCK0, P26/RXD1/SI1, P27/SCK1, MODE0 to MODE2, RESET
HVDD
0.8HVDD
Input signal
0V
Measurement
points
0.2HVDD
0.8HVDD
0.2HVDD
(b) Other than (a)
2.4 V
2.2 V
Input signal
0.4 V
Measurement
points
2.2 V
0.8 V
0.8 V
AC Test Output Measurement Points
2.4 V
Output signal
Measurement
points
0.8 V
2.4 V
0.8 V
Load Conditions
DUT
(Device under test)
CL = 50 pF
Caution If the load capacitance exceeds 50 pF due to the circuit configuration, reduce the load
capacitance of the device to 50 pF or less by inserting a buffer or by some other means.
Data Sheet U13844EJ3V0DS
27
µPD70F3102-33
(1) Clock timing
Parameter
Symbol
X1 input cycle
<1>
X1 input high-level width
<2>
X1 input low-level width
<3>
X1 input rise time
<4>
X1 input fall time
<5>
Conditions
tCYX
tWXH
tWXL
tXR
tXF
MIN.
MAX.
Unit
In direct mode
15
250
ns
In PLL mode
150
250
ns
In direct mode
5
ns
In PLL mode
50
ns
In direct mode
5
ns
In PLL mode
50
ns
In direct mode
4
ns
In PLL mode
10
ns
In direct mode
4
ns
In PLL mode
10
ns
100
ns
CLKOUT output cycle
<6>
tCYK
30
CLKOUT high-level width
<7>
tWKH
0.5T − 7
ns
CLKOUT low-level width
<8>
tWKL
0.5T − 4
ns
CLKOUT rise time
<9>
tKR
5
ns
CLKOUT fall time
<10>
tKF
5
ns
Remark T = tCYK
<1>
<2>
<3>
<4>
<5>
X1
(PLL mode)
<1>
<2>
<3>
<4>
X1
(Direct mode)
<5>
CLKOUT (Output)
<9>
<10>
<7>
<8>
<6>
28
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(2) Output waveform (other than X1, CLKOUT)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Output rise time
<12>
tOR
10
ns
Output fall time
<13>
tOF
10
ns
<12>
<13>
Signals other than X1, CLKOUT
(3) Reset timing
Parameter
Symbol
Conditions
RESET pin high-level width
<14>
tWRSH
RESET pin low-level width
<15>
tWRSL
MIN.
MAX.
Unit
500
ns
At power ON, STOP mode release
500 + TOS
ns
Except at power ON, STOP mode
release
500
ns
Remark TOS: Oscillation stabilization time
<14>
<15>
RESET (Input)
Data Sheet U13844EJ3V0DS
29
µPD70F3102-33
(4) SRAM, external ROM, external I/O access timing
(a) Access timing (SRAM, external ROM, external I/O) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Address, CSn output delay time
(from CLKOUT↓)
<16>
tDKA
2
10
ns
Address, CSn output hold time
(from CLKOUT↓)
<17>
tHKA
2
10
ns
RD, IORD↓ delay time
(from CLKOUT↑)
<18>
tDKRDL
2
14
ns
RD, IORD↑ delay time
(from CLKOUT↑)
<19>
tHKRDH
2
14
ns
UWR, LWR, IOWR↓ delay time
(from CLKOUT↑)
<20>
tDKWRL
2
10
ns
UWR, LWR, IOWR↑ delay time
(from CLKOUT↑)
<21>
tHKWRH
2
10
ns
BCYST↓ delay time
(from CLKOUT↓)
<22>
tDKBSL
2
10
ns
BCYST↑ delay time
(from CLKOUT↓)
<23>
tHKBSH
2
10
ns
WAIT setup time (to CLKOUT↓)
<24>
tSWK
15
ns
WAIT hold time (from CLKOUT↓)
<25>
tHKW
2
ns
Data input setup time
(to CLKOUT↑)
<26>
tSKID
18
ns
Data input hold time
(from CLKOUT↑)
<27>
tHKID
2
ns
Data output delay time
(from CLKOUT↓)
<28>
tDKOD
2
10
ns
Data output hold time
(from CLKOUT↓)
<29>
tHKOD
2
10
ns
Remarks 1. Observe at least one of the data input hold times, tHKID or tHRDID.
2. n = 0 to 7
30
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(a) Access timing (SRAM, external ROM, external I/O) (2/2)
T1
TW
T2
CLKOUT (Output)
<16>
<17>
A0 to A23 (Output)
CSn (Output)
<22>
<23>
BCYST (Output)
<18>
<19>
<20>
<21>
RD, IORD (Output)
[Read time]
UWR, LWR, IOWR (Output)
[Write time]
<26>
<27>
D0 to 15 (I/O)
[Read time]
<28>
<29>
D0 to 15 (I/O)
[Write time]
<25>
<24>
<25>
<24>
WAIT (Input)
Remarks 1. Timing when number of waits specified by registers DWC1 and DWC2 is 0.
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
31
µPD70F3102-33
(b) Read timing (SRAM, external ROM, external I/O) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Data input setup time (to address)
<30>
tSAID
(1.5 + wD + w) T − 28
ns
Data input setup time (to RD)
<31>
tSRDID
(1 + wD +w) T − 32
ns
RD, IORD low-level width
<32>
tWRDL
(1 + wD + w) T − 10
ns
RD, IORD high-level width
<33>
tWRDH
T − 10
ns
Delay time from address, CSn to
RD, IORD↓
<34>
tDARD
0.5T − 10
ns
Delay time from RD, IORD↑ to
address
<35>
tDRDA
(0.5 + i) T − 10
ns
Data input hold time
<36>
tHRDID
0
ns
Delay time from RD, IORD↑ to
data output
<37>
tDRDOD
(0.5 + i) T − 10
ns
WAIT setup time (to address)
<38>
tSAW
Note
T − 25
ns
WAIT setup time (to BCYST↓)
<39>
tSBSW
Note
T − 25
ns
WAIT hold time (from BCYST↑)
<40>
tHBSW
Note
(from RD, IORD↑)
0
ns
Note During the first WAIT sampling, when the number of waits specified by registers DWC1 and DWC2 is 0.
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wD: Number of waits specified by registers DWC1, DWC2
4. i: Number of idle states inserted when a write cycle follows the read cycle.
5. Observe at least one of the data input hold times, tHKID or tHRDID.
6. n = 0 to 7
32
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(b) Read timing (SRAM, external ROM, external I/O) (2/2)
T1
TW
T2
CLKOUT (Output)
A0 to A23 (Output)
CSn (Output)
UWR, LWR, IOWR (Output)
<33>
<32>
<35>
RD, IORD (Output)
<34>
<31>
<30>
<37>
<36>
D0 to D15 (I/O)
<38>
WAIT (Input)
<39>
<40>
BCYST (Output)
Remarks 1. Timing when the number of waits specified by registers DWC1 and DWC2 is 0.
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
33
µPD70F3102-33
(c) Write timing (SRAM, external ROM, external I/O) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
WAIT setup time (to address)
<38>
tSAW
Note
T − 25
ns
WAIT setup time (to BCYST↓)
<39>
tSBSW
Note
T − 25
ns
WAIT hold time (from BCYST↑)
<40>
tHBSW
Note
Delay time from address, CSn to
UWR, LWR, IOWR↓
<41>
Address setup time
(to UWR, LWR, IOWR↑)
0
ns
tDAWR
0.5T − 10
ns
<42>
tSAWR
(1.5 + wD + w) T − 10
ns
Delay time from UWR, LWR,
IOWR↑ to address
<43>
tDWRA
0.5T − 10
ns
UWR, LWR, IOWR high-level
width
<44>
tWWRH
T − 10
ns
UWR, LWR, IOWR low-level width
<45>
tWWRL
(1 + wD + w) T − 10
ns
Data output setup time (to UWR,
LWR, IOWR↑)
<46>
tSODWR
(1.5 + wD + w) T − 10
ns
Data output hold time (from UWR,
LWR, IOWR↑)
<47>
tHWROD
0.5T − 10
ns
Note During the first WAIT sampling, when the number of waits specified by registers DWC1 and DWC2 is 0.
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wD: Number of waits specified by registers DWC1 and DWC2
4. n = 0 to 7
34
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(c) Write timing (SRAM, external ROM, external I/O) (2/2)
T1
TW
T2
CLKOUT (Output)
A0 to A23 (Output)
CSn (Output)
RD, IORD (Output)
<41>
<42>
<45>
<43>
<44>
UWR, LWR, IOWR (Output)
<46>
<47>
D0 to D15 (I/O)
<38>
WAIT (Input)
<39>
<40>
BCYST (Output)
Remarks 1. Timing when the number of waits specified by registers DWC1 and DWC2 is 0.
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
35
µPD70F3102-33
(d) DMA flyby transfer timing (SRAM → external I/O transfer) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
WAIT setup time (to CLKOUT↓)
<24>
tSWK
15
ns
WAIT hold time (from CLKOUT↓)
<25>
tHKW
2
ns
RD low-level width
<32>
tWRDL
(1 + wD + wF + w) T − 10
ns
RD high-level width
<33>
tWRDH
T − 10
ns
Delay time from address, CSn to
RD↓
<34>
tDARD
0.5T − 10
ns
Delay time from RD↑ to address
<35>
tDRDA
(0.5 + i) T − 10
ns
Delay time from RD↑ to data
output
<37>
tDRDOD
(0.5 + i) T − 10
ns
WAIT setup time (to address)
<38>
tSAW
Note
T − 25
ns
WAIT setup time (to BCYST↓)
<39>
tSBSW
Note
T − 25
ns
WAIT hold time (from BCYST↑)
<40>
tHBSW
Note
Delay time from address to
IOWR↓
<41>
Address setup time (to IOWR↑)
0
ns
tDAWR
0.5T − 10
ns
<42>
tSAWR
(1.5 + wD + w) T − 10
ns
Delay time from IOWR↑ to
address
<43>
tDWRA
0.5T − 10
ns
IOWR high-level width
<44>
tWWRH
T − 10
ns
IOWR low-level width
<45>
tWWRL
(1 + wD + w) T − 10
ns
Delay time from IOWR↑ to RD↑
<48>
tDWRRD
wF = 0
0
ns
wF = 1
T − 10
ns
Delay time from DMAAKm↓ to
IOWR↓
<49>
tDDAWR
0.5T − 10
ns
Delay time from IOWR↑ to
DMAAKm↑
<50>
tDWRDA
(0.5 + wF) T − 10
ns
Note During the first WAIT sampling, when number of waits specified by registers DWC1 and DWC2 is 0.
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wD: Number of waits specified by registers DWC1, DWC2
4. wF: Number of waits inserted to source-side access during DMA flyby transfer
5. i: Number of idle states inserted when a write cycle follows the read cycle
6. n = 0 to 7, m = 0 to 3
36
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(d) DMA flyby transfer timing (SRAM → external I/O transfer) (2/2)
T1
TW
T2
CLKOUT (Output)
A0 to A23 (Output)
CSn (Output)
<33>
<32>
<35>
RD (Output)
<34>
<48>
UWR, LWR (Output)
DMAAKm (Output)
<49>
<50>
IORD (Output)
<42>
<41>
<43>
<45>
<44>
IOWR (Output)
<37>
D0 to D15 (I/O)
<38>
<24>
<25>
<25>
<24>
WAIT (Input)
<40>
<39>
BCYST (Output)
Remarks 1. Timing when the number of waits specified by registers DWC1 and DWC2 is 0.
2. Broken lines indicate high impedance.
3. n = 0 to 7, m = 0 to 3
Data Sheet U13844EJ3V0DS
37
µPD70F3102-33
(e) DMA flyby transfer timing (external I/O → SRAM transfer) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
WAIT setup time (to CLKOUT↓)
<24>
tSWK
15
ns
WAIT hold time (from CLKOUT↓)
<25>
tHKW
2
ns
IORD low-level width
<32>
tWRDL
(1 + wD + wF + w) T − 10
ns
IORD high-level width
<33>
tWRDH
T − 10
ns
Delay time from address, CSn to
IORD↓
<34>
tDARD
0.5T − 10
ns
Delay time from IORD↑ to address
<35>
tDRDA
(0.5 + i) T − 10
ns
Delay time from IORD↑ to data
output
<37>
tDRDOD
(0.5 + i) T − 10
ns
WAIT setup time (to address)
<38>
tSAW
Note
T − 25
ns
WAIT setup time (to BCYST↓)
<39>
tSBSW
Note
T − 25
ns
WAIT hold time (from BCYST↑)
<40>
tHBSW
Note
Delay time from address to UWR,
LWR↓
<41>
Address setup time (to UWR,
LWR↑)
0
ns
tDAWR
0.5T − 10
ns
<42>
tSAWR
(1.5 + wD + w) T − 10
ns
Delay time from UWR, LWR↑ to
address
<43>
tDWRA
0.5T − 10
ns
UWR, LWR high-level width
<44>
tWWRH
T − 10
ns
UWR, LWR low-level width
<45>
tWWRL
(1 + wD + w) T − 10
ns
Delay time from UWR, LWR↑ to
IORD↑
<48>
tDWRRD
wF = 0
0
ns
wF = 1
T − 10
ns
Delay time from DMAAKm↓ to
IORD↓
<51>
tDDARD
0.5T − 10
ns
Delay time from IORD↑ to
DMAAKm↑
<52>
tDRDDA
0.5T − 10
ns
Note During the first WAIT sampling, when the number of waits specified by registers DWC1 and DWC2 is 0.
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wD: Number of waits specified by registers DWC1 and DWC2.
4. wF: Number of waits inserted to source-side access during DMA flyby transfer.
5. i: Number of idle states inserted when a write cycle follows the read cycle.
6. n = 0 to 7, m = 0 to 3
38
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(e) DMA flyby transfer timing (external I/O → SRAM transfer) (2/2)
T1
TW
T2
CLKOUT (Output)
A0 to A23 (Output)
CSn (Output)
<41>
<42>
<45>
<43>
<44>
UWR, LWR (Output)
<48>
RD (Output)
<51>
<52>
DMAAKm (Output)
IOWR (Output)
<34>
<33>
<32>
<35>
IORD (Output)
<37>
D0 to D15 (I/O)
<38>
<24>
<25>
<25>
<24>
WAIT (Input)
<40>
<39>
BCYST (Output)
Remarks 1. Timing when the number of waits specified by registers DWC1 and DWC2 is 0 and wF = 0.
2. Broken lines indicate high impedance.
3. n = 0 to 7, m = 0 to 3
Data Sheet U13844EJ3V0DS
39
µPD70F3102-33
(5) Page ROM access timing (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
WAIT setup time (to CLKOUT↓)
<24>
tSWK
15
ns
WAIT hold time (from CLKOUT↓)
<25>
tHKW
2
ns
Data input setup time
(to CLKOUT↑)
<26>
tSKID
18
ns
Data input hold time
(from CLKOUT↑)
<27>
tHKID
2
ns
Off-page data input setup time
(to address)
<30>
tSAID
(1.5 + wD +w) T − 28
ns
Off-page data input setup time
(to RD)
<31>
tSRDID
(1 + wD + w) T − 32
ns
Off-page RD low-level width
<32>
tWRDL
(1 + wD + w) T − 10
ns
RD high-level width
<33>
tWRDH
0.5T − 10
ns
Data input hold time (from RD)
<36>
tHRDID
0
ns
Delay time from RD↑ to data
output
<37>
tDRDOD
(0.5 + i) T − 10
ns
On-page RD low-level width
<53>
tWORDL
(1.5 + wPR + w) T − 10
ns
On-page data input setup time
(to address)
<54>
tSOAID
(1.5 + wPR + w) T − 28
ns
On-page data input setup time
(to RD)
<55>
tSORDID
(1.5 + wPR + w) T − 32
ns
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wD: Number of waits specified by registers DWC1 and DWC2.
4. wPR: Number of waits specified by register PRC.
5. i: Number of idle states inserted when a write cycle follows the read cycle.
6. Observe at least one of the data input hold times, tHKID or tHRDID.
40
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(5) Page ROM access timing (2/2)
T1
TDW
TW
T2
TO1
TPRW
TW
TO2
CLKOUT (Output)
Off-page addressNote
CSn (Output)
On-page addressNote
<26>
<30>
<54>
UWR, LWR (Output)
<33>
<32>
<53>
<55>
<31>
<37>
RD (Output)
<36>
<36>
<26>
<27>
<27>
D0 to D15 (I/O)
<25>
<25>
<24>
<25>
<24>
<24>
<25>
<24>
WAIT (Input)
BCYST (Output)
Note On-page addresses and off-page addresses are as follows.
PRC Register
On-Page Addresses
Off-Page Addresses
MA5
MA4
MA3
0
0
0
A0, A1
A2 to A23
0
0
1
A0 to A2
A3 to A23
0
1
1
A0 to A3
A4 to A23
1
1
1
A0 to A4
A5 to A23
Remarks 1. These timings are for the following cases:
Number of waits (TDW) specified by registers DWC1 and DWC2: 1
Number of waits (TPRW) specified by register PRC: 1
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
41
µPD70F3102-33
(6) DRAM access timing
(a) Read timing (high-speed page DRAM access, normal access: off-page) (1/3)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
WAIT setup time (to CLKOUT↓)
<24>
tSWK
15
ns
WAIT hold time (from CLKOUT↓)
<25>
tHKW
2
ns
Data input setup time (to CLKOUT↑)
<26>
tSKID
18
ns
Data input hold time (from
CLKOUT↑)
<27>
tHKID
2
ns
Delay time from OE↑ to data output
<37>
tDRDOD
(0.5 + i) T − 10
ns
Row address setup time
<56>
tASR
(0.5 + wRP) T − 10
ns
Row address hold time
<57>
tRAH
(0.5 + wRH) T − 10
ns
Column address setup time
<58>
tASC
0.5T − 10
ns
Column address hold time
<59>
tCAH
(1.5 + wDA + w) T − 10
ns
Read/write cycle time
<60>
tRC
(3 + wRP + wRH + wDA + w)
T − 10
ns
RAS recharge time
<61>
tRP
(0.5 + wRP) T − 10
ns
RAS pulse time
<62>
tRAS
(2.5 + wRH + wDA + w)
T − 10
ns
RAS hold time
<63>
tRSH
(1.5 + wDA + w) T − 10
ns
Column address read time for RAS
<64>
tRAL
(2 + wDA + w) T − 10
ns
CAS pulse width
<65>
tCAS
(1 + wDA + w) T − 10
ns
CAS to RAS precharge time
<66>
tCRP
(1 + wRP) T − 10
ns
CAS hold time
<67>
tCSH
(2 + wRH + wDA + w) T − 10
ns
WE setup time
<68>
tRCS
(2 + wRP + wRH) T − 10
ns
WE hold time (from RAS↑)
<69>
tRRH
0.5T − 10
ns
WE hold time (from CAS↑)
<70>
tRCH
T − 10
ns
CAS precharge time
<71>
tCPN
(2 + wRP + wRH) T − 10
ns
Output enable access time
<72>
tOEA
(2 + wRP + wRH + wDA + w)
T − 28
ns
RAS access time
<73>
tRAC
(2 + wRH + wDA + w)
T − 28
ns
Access time from column address
<74>
tAA
(1.5 + wDA + w) T − 28
ns
CAS access time
<75>
tCAC
(1 + wDA + w) T − 28
ns
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
6. i: Number of idle states inserted when a write cycle follows the read cycle.
42
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(a) Read timing (high-speed page DRAM access, normal access: off-page) (2/3)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
RAS column address delay time
<76>
tRAD
(0.5 + wRH) T − 10
ns
RAS to CAS delay time
<77>
tRCD
(1 + wRH) T − 10
ns
Output buffer turn off delay time
(from OE↑)
<78>
tOEZ
0
ns
Output buffer turn off delay time
(from CAS↑)
<79>
tOFF
0
ns
Remarks 1. T = tCYK
2. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
Data Sheet U13844EJ3V0DS
43
µPD70F3102-33
(a) Read timing (high-speed page DRAM access, normal access: off-page) (3/3)
TRPW
T1
TRHW
T2
TDAW
TW
T3
CLKOUT (Output)
<58>
<56>
<57>
<59>
Row address
A0 to A23 (Output)
Column address
<63>
<64>
<76>
<61>
<62>
RASn (Output)
<60>
<77>
<65>
<66>
<67>
UCAS (Output)
LCAS (Output)
<69>
<71>
<73>
<68>
<75>
<70>
WE (Output)
<79>
<74>
<27>
<72>
<37>
OE (Output)
<78>
<26>
D0 to D15 (I/O)
<24>
<25>
<25>
<24>
WAIT (Input)
Remarks 1. These timings are for the following cases (n = 0 to 3, xx = 00 to 03, 10 to 13):
Number of waits (TRPW) specified by RPCxx bit of register DRCn: 1
Number of waits (TRHW) specified by RHCxx bit of register DRCn: 1
Number of waits (TDAW) specified by DACxx bit of register DRCn: 1
2. Broken lines indicate high impedance.
3. n = 0 to 7
44
Data Sheet U13844EJ3V0DS
µPD70F3102-33
[MEMO]
Data Sheet U13844EJ3V0DS
45
µPD70F3102-33
(b) Read timing (high-speed DRAM access: on-page) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Data input setup time (to
CLKOUT↑)
<26>
tSKID
18
ns
Data input hold time (from
CLKOUT↑)
<27>
tHKID
2
ns
Delay time from OE↑ to data output
<37>
tDRDOD
(0.5 + i) T − 10
ns
Column address setup time
<58>
tASC
(0.5 + wCP) T − 10
ns
Column address hold time
<59>
tCAH
(1.5 + wDA) T − 10
ns
RAS hold time
<63>
tRSH
(1.5 + wDA) T − 10
ns
Column address read time for RAS
<64>
tRAL
(2 + wCP + wDA) T − 10
ns
CAS pulse width
<65>
tCAS
(1 + wDA) T − 10
ns
WE setup time (to CAS↓)
<68>
tRCS
(1 + wCP) T − 10
ns
WE hold time (from RAS↑)
<69>
tRRH
0.5 T − 10
ns
WE hold time (from CAS↑)
<70>
tRCH
T − 10
ns
Output enable access time
<72>
tOEA
(1 + wCP + wDA) T − 28
ns
Access time from column address
<74>
tAA
(1.5 + wCP + wDA) T − 28
ns
CAS access time
<75>
tCAC
(1 + wDA) T − 28
ns
Output buffer turn-off delay time
(from OE↑)
<78>
tOEZ
0
ns
Output buffer turn-off delay time
(from CAS↑)
<79>
tOFF
0
ns
Access time from CAS precharge
<80>
tACP
CAS precharge time
<81>
tCP
(1 + wCP) T − 10
ns
High-speed page mode cycle time
<82>
tPC
(2 + wCP + wDA) T − 10
ns
RAS hold time from CAS precharge
<83>
tRHCP
(2.5 + wCP + wDA) T − 10
ns
(2 + wCP + wDA) T − 28
Remarks 1. T = tCYK
2. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
3. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. i: Number of idle states inserted when a write cycle follows the read cycle.
46
Data Sheet U13844EJ3V0DS
ns
µPD70F3102-33
(b) Read timing (high-speed DRAM access: on-page) (2/2)
TCPW
TO1
TDAW
TO2
CLKOUT (Output)
<58>
<59>
A0 to A23 (Output)
Column address
<63>
<64>
RASn (Output)
<83>
<81>
<65>
<82>
UCAS (Output)
LCAS (Output)
<69>
<68>
<70>
WE (Output)
<75>
<72>
<79>
<26>
<37>
OE (Output)
<74>
<80>
<78>
<27>
D0 to D15 (I/O)
WAIT (Input)
Remarks 1. These timings are for the following cases (n = 0 to 3, xx = 00 to 03, 10 to 13):
Number of waits (TCPW) specified by CPCxx bit of register DRCn: 1
Number of waits (TDAW) specified by DACxx bit of register DRCn: 1
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
47
µPD70F3102-33
(c) Write timing (high-speed page DRAM access, normal access: off-page) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
WAIT setup time (to CLKOUT↓)
<24>
tSWK
15
ns
WAIT hold time (from CLKOUT↓)
<25>
tHKW
2
ns
Row address setup time
<56>
tASR
(0.5 + wRP) T − 10
ns
Row address hold time
<57>
tRAH
(0.5 + wRH) T − 10
ns
Column address setup time
<58>
tASC
0.5T − 10
ns
Column address hold time
<59>
tCAH
(1.5 + wDA + w) T − 10
ns
Read/write cycle time
<60>
tRC
(3 + wRP + wRH + wDA + w)
T − 10
ns
RAS precharge time
<61>
tRP
(0.5 + wRP) T − 10
ns
RAS pulse time
<62>
tRAS
(2.5 + wRH + wDA + w)
T − 10
ns
RAS hold time
<63>
tRSH
(1.5 + wDA + w) T − 10
ns
Column address read time (from
RAS↑)
<64>
tRAL
(2 + wDA + w) T − 10
ns
CAS pulse width
<65>
tCAS
(1 + wDA + w) T − 10
ns
CAS to RAS precharge time
<66>
tCRP
(1 + wRH) T − 10
ns
CAS hold time
<67>
tCSH
(2 + wRH + wDA + w)
T − 10
ns
CAS precharge time
<71>
tCPN
(2 + wRP + wRH) T − 10
ns
RAS column address delay time
<76>
tRAD
(0.5+ wRH) T − 10
ns
RAS to CAS delay time
<77>
tRCD
(1 + wRH) T − 10
ns
WE setup time (to CAS↓)
<84>
tWCS
(1 + wRP + wRH) T − 10
ns
WE hold time (from CAS↓)
<85>
tWCH
(1 + wDA + w) T − 10
ns
Data setup time (to CAS↓)
<86>
tDS
(1.5 + wRP + wRH) T − 10
ns
Data hold time (from CAS↓)
<87>
tDH
(1.5 + wDA + w) T − 10
ns
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
48
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(c) Write timing (high-speed page DRAM access, normal access: off-page) (2/2)
TRPW
T1
TRHW
T2
TDAW
TW
T3
CLKOUT (Output)
<58>
<56>
A0 to A23 (Output)
<57>
<59>
Row address
Column address
<63>
<64>
<76>
<61>
<62>
RASn (Output)
<60>
<77>
<66>
<65>
<67>
UCAS (Output)
LCAS (Output)
<71>
OE (Output)
<84>
<85>
WE (Output)
<86>
<87>
D0 to D15 (I/O)
<24>
<25>
<25>
<24>
WAIT (Input)
Remarks 1. These timings are for the following cases (n = 0 to 3, xx = 00 to 03, 10 to 13):
Number of waits (TRPW) specified by RPCxx bit of register DRCn: 1
Number of waits (TRHW) specified by RHCxx bit of register DRCn: 1
Number of waits (TDAW) specified by DACxx bit of register DRCn: 1
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
49
µPD70F3102-33
(d) Write timing (high-speed page DRAM access: on-page) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Column address setup time
<58>
tASC
(0.5 + wCP) T − 10
ns
Column address hold time
<59>
tCAH
(1.5 + wDA) T − 10
ns
RAS hold time
<63>
tRSH
(1.5 + wDA) T − 10
ns
Column address read time (from
RAS↑)
<64>
tRAL
(2 + wCP + wDA) T − 10
ns
CAS pulse width
<65>
tCAS
(1 + wDA) T − 10
ns
CAS precharge time
<81>
tCP
(1 + wCP) T − 10
ns
RAS hold time for CAS precharge
<83>
tRHCP
(2.5 + wCP + wDA)
T − 10
ns
WE setup time (to CAS↓)
<84>
tWCS
wCPT − 10
ns
WE hold time (from CAS↓)
<85>
tWCH
(1 + wDA) T − 10
ns
Data setup time (to CAS↓)
<86>
tDS
(0.5 + wCP) T − 10
ns
Data hold time (from CAS↓)
<87>
tDH
(1.5 + wDA) T − 10
ns
WE read time (from RAS↑)
<88>
tRWL
wCP = 0
(1.5 + wDA) T − 10
ns
WE read time (from CAS↑)
<89>
tCWL
wCP = 0
(1 + wDA) T − 10
ns
Data setup time (to WE↓)
<90>
tDSWE
wCP = 0
0.5T − 10
ns
Data hold time (from WE↓)
<91>
tDHWE
wCP = 0
(1.5 + wDA) T − 10
ns
WE pulse width
<92>
tWP
wCP = 0
(1 + wDA) T − 10
ns
wCP ≥ 1
Remarks 1. T = tCYK
2. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
3. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
50
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(d) Write timing (high-speed page DRAM access: on-page) (2/2)
TCPW
TO1
TDAW
TO2
CLKOUT (Output)
<58>
A0 to A23 (Output)
<59>
Column address
<63>
<64>
RASn (Output)
<83>
<81>
<65>
UCAS (Output)
LCAS (Output)
<89>
<88>
OE (Output)
<84>
<85>
<92>
WE (Output)
<91>
<90>
<86>
<87>
D0 to D15 (I/O)
WAIT (Input)
Remarks 1. These timings are for the following cases (n = 0 to 3, xx = 00 to 03, 10 to 13):
Number of waits (TCPW) specified by CPCxx bit of register DRCn: 1
Number of waits (TDAW) specified by DACxx bit of register DRCn: 1
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
51
µPD70F3102-33
(e) Read timing (EDO DRAM) (1/3)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Data input setup time (to CLKOUT↑)
<26>
tSKID
18
ns
Data input hold time
(from CLKOUT↑)
<27>
tHKID
2
ns
Delay time from OE↑ to data output
<37>
tDRDOD
(0.5 + i) T − 10
ns
Row address setup time
<56>
tASR
(0.5 + wRP) T − 10
ns
Row address hold time
<57>
tRAH
(0.5 + wRH) T − 10
ns
Column address setup time
<58>
tASC
0.5T − 10
ns
Column address hold time
<59>
tCAH
(0.5 + wDA) T − 10
ns
RAS precharge time
<61>
tRP
(0.5 + wRP) T − 10
ns
Column address read time
(to RAS↑)
<64>
tRAL
(2 + wCP + wDA) T − 10
ns
CAS to RAS precharge time
<66>
tCRP
(1 + wRP) T − 10
ns
CAS hold time
<67>
tCSH
(1.5 + wRH + wDA) T − 10
ns
WE setup time (to CAS↓)
<68>
tRCS
(2 + wRP +wRH) T − 10
ns
WE hold time (from RAS↑)
<69>
tRRH
0.5T − 10
ns
WE hold time (from CAS↑)
<70>
tRCH
1.5T − 10
ns
RAS access time
<73>
tRAC
(2 + wRH + wDA) T − 28
ns
Access time from column address
<74>
tAA
(1.5 + wDA) T − 28
ns
CAS access time
<75>
tCAC
(1 + wDA) T − 28
ns
Delay time from RAS to column
address
<76>
tRAD
(0.5 + wRH) T − 10
ns
RAS to CAS delay time
<77>
tRCD
(1 + wRH) T − 10
ns
Output buffer turn-off delay time
(from OE)
<78>
tOEZ
0
ns
Access time from CAS precharge
<80>
tACP
CAS precharge time
<81>
tCP
(0.5 + wCP) T − 10
ns
RAS hold time for CAS precharge
<83>
tRHCP
(2 + wCP + wDA) T − 10
ns
Read cycle time
<93>
tHPC
(1 + wDA + wCP) T − 10
ns
RAS pulse width
<94>
tRASP
(2.5 + wRH + wDA) T − 10
ns
CAS pulse width
<95>
tHCAS
(0.5 + wDA) T − 10
ns
Off-page
<96>
tOCH1
(2 + wRH + wDA) T − 10
ns
On-page
<97>
tOCH2
(0.5 + wDA) T − 10
ns
<98>
tDHC
0
ns
Hold time from
OE to CAS
Data input hold time (from CAS↓)
(1.5 + wCP + wDA) T − 28
ns
Remarks 1. T = tCYK
2. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
3. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
6. i: Number of idle states inserted when a write cycle follows the read cycle.
52
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(e) Read timing (EDO DRAM) (2/3)
Parameter
Output enable
access time
Symbol
Conditions
MIN.
MAX.
Unit
Off-page
<99>
tOEA1
(2 + wRP + wRH + wDA)
T − 28
ns
On-page
<100>
tOEA2
(1 + wCP + wDA) T − 28
ns
Remarks 1. T = tCYK
2. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
3. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
Data Sheet U13844EJ3V0DS
53
µPD70F3102-33
(e) Read timing (EDO DRAM) (3/3)
TRPW
T1
TRHW
T2
TDAW TCPW
TB
TDAW
TE
CLKOUT (Output)
<58>
<56>
A0 to A23 (Output)
<57>
Row address
<59>
Column address
Column address
<64>
<76>
<74>
<94>
<61>
RASn (Output)
<67>
<66>
<83>
<77>
<95>
<81>
<75>
UCAS (Output)
LCAS (Output)
<68>
<93>
<69>
<95>
<80>
<70>
WE (Output)
<97>
<96>
<100>
<26>
Note
OE (Output)
<75>
<74>
<98>
<27>
<27>
<78>
<26>
D0 to D15 (I/O)
Data
<73>
<99>
BCYST (Output)
WAIT (Input)
Note In case of on-page access from another cycle, while RASn is low level.
Remarks 1. These timings are for the following cases (n = 0 to 3, xx = 00 to 03, 10 to 13):
Number of waits (TRPW) specified by RPCxx bit of register DRCn: 1
Number of waits (TRHW) specified by RHCxx bit of register DRCn: 1
Number of waits (TDAW) specified by DACxx bit of register DRCn: 1
Number of waits (TCPW) specified by CPCxx bit of register DRCn: 1
2. Broken lines indicate high impedance.
3. n = 0 to 7
54
Data Sheet U13844EJ3V0DS
Data
<37>
µPD70F3102-33
[MEMO]
Data Sheet U13844EJ3V0DS
55
µPD70F3102-33
(f) Write timing (EDO DRAM) (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Row address setup time
<56>
tASR
(0.5 + wRP) T − 10
ns
Row address hold time
<57>
tRAH
(0.5 + wRH) T −10
ns
Column address setup time
<58>
tASC
0.5T − 10
ns
Column address hold time
<59>
tCAH
(0.5 + wDA) T − 10
ns
RAS precharge time
<61>
tRP
(0.5 + wRP) T − 10
ns
RAS hold time
<63>
tRSH
(1.5 + wDA) T − 10
ns
Column address read time
(to RAS↑)
<64>
tRAL
(2 + wCP + wDA) T − 10
ns
CAS to RAS precharge time
<66>
tCRP
(1 + wRP) T − 10
ns
CAS hold time
<67>
tCSH
(1.5 + wRH + wDA) T − 10
ns
Delay time from RAS to column
address
<76>
tRAD
(0.5 + wRH) T − 10
ns
RAS to CAS delay time
<77>
tRCD
(1 + wRH) T − 10
ns
CAS precharge time
<81>
tCP
(0.5 + wCP) T − 10
ns
RAS hold time for CAS precharge
<83>
tRHCP
(2 + wCP + wDA) T − 10
ns
WE hold time (from CAS↓)
<85>
tWCH
(1 + wDA) T − 10
ns
Data hold time (from CAS↓)
<87>
tDH
(0.5 + wDA) T − 10
ns
WE read time (to
RAS↑)
On-page
<88>
tRWL
wCP = 0
(1.5 + twDA) T − 10
ns
WE read time (to
CAS↑)
On-page
<89>
tCWL
wCP = 0
(0.5 + wDA) T − 10
ns
WE pulse width
On-page
<92>
tWP
wCP = 0
(1 + wDA) T − 10
ns
Write cycle time
<93>
tHPC
(1 + wDA + wCP) T − 10
ns
RAS pulse width
<94>
tRASP
(2.5 + wRH + wDA) T − 10
ns
CAS pulse width
<95>
tHCAS
(0.5 + wDA) T − 10
ns
Off-page
<101>
tWCS1
(1 + wRP + wRH) T − 10
ns
On-page
<102>
tWCS2
wCPT − 10
ns
Off-page
<103>
tDS1
(1.5 + wRP + wRH) T − 10
ns
On-page
<104>
tDS2
(0.5 + wCP) T − 10
ns
WE setup time
(to CAS↓)
Data setup time
(to CAS↓)
wCP ≥ 1
Remarks 1. T = tCYK
2. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
3. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
56
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(f) Write timing (EDO DRAM) (2/2)
TRPW
T1
TRHW
T2
TDAW
TCPW
TB
TDAW
TE
CLKOUT (Output)
<58>
<56>
<57>
<59>
Row address
A0 to A23 (Output)
<58>
Column address
<59>
Column address
<76>
<64>
<61>
<94>
RASn (Output)
<67>
<66>
<77>
<83>
<95>
<81>
<63>
UCAS (Output)
LCAS (Output)
<93>
<95>
<89>
<88>
RD (Output)
OE (Output)
<102>
<85>
<101>
<85>
<92>
WE (Output)
<103>
D0 to D15 (I/O)
<87>
Data
<104>
<87>
Data
BCYST (Output)
WAIT (Input)
Remarks 1. These timings are for the following cases (n = 0 to 3, xx = 00 to 03, 10 to 13):
Number of waits (TRPW) specified by RPCxx bit of register DRCn: 1
Number of waits (TRHW) specified by RHCxx bit of register DRCn: 1
Number of waits (TDAW) specified by DACxx bit of register DRCn: 1
Number of waits (TCPW) specified by CPCxx bit of register DRCn: 1
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
57
µPD70F3102-33
(g) DMA flyby transfer timing (DRAM (EDO, high-speed page) → external I/O transfer) (1/3)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
WAIT setup time (to CLKOUT↓)
<24>
tSWK
15
ns
WAIT hold time (from CLKOUT↓)
<25>
tHKW
2
ns
Delay time from OE↑ to data output
<37>
tDRDOD
(0.5 + i) T − 10
ns
Delay time from address to IOWR↓
<41>
tDAWR
(0.5 + wRP) T − 10
ns
Address setup time (to IOWR↑)
<42>
tSAWR
(2 + wRP + wRH + wDA + w) T −10
ns
Delay time from IOWR↑ to address
<43>
tDWRA
0.5T − 10
ns
Delay time from IOWR↑ to RD↑
<48>
tDWRRD
wF = 0
0
ns
wF = 1
T − 10
ns
IOWR low-level width
<50>
tWWRL
(2 + wRH + wDA + w) T − 10
ns
Row address setup time
<56>
tASR
(0.5 + wRP) T − 10
ns
Row address hold time
<57>
tRAH
(0.5 + wRH) T − 10
ns
Column address setup time
<58>
tASC
0.5T − 10
ns
Column address hold time
<59>
tCAH
(1.5 + wDA + wF + w) T − 10
ns
Read/write cycle time
<60>
tRC
(3 + wRP + wRH + wDA + wF + w)
T − 10
ns
RAS precharge time
<61>
tRP
(0.5 + wRP) T − 10
ns
RAS hold time
<63>
tRSH
(1.5 + wDA + wF + w) T − 10
ns
Column address read time for RAS
<64>
tRAL
(2 + wCP + wDA + wF + w) T − 10
ns
CAS pulse width
<65>
tCAS
(1 + wDA + wF + w) T − 10
ns
CAS to RAS precharge time
<66>
tCRP
(1 + wRP) T −10
ns
CAS hold time
<67>
tCSH
(2 + wRH + wDA + wF + w) T − 10
ns
WE setup time (to CAS↓)
<68>
tRCS
(2 + wRP + wRH) T − 10
ns
WE hold time (from RAS↑)
<69>
tRRH
0.5T − 10
ns
WE hold time (from CAS↑)
<70>
tRCH
1.5T − 10
ns
CAS precharge time
<71>
tCPN
(2 + wRP + wRH) T − 10
ns
Delay time from RAS to column
address
<76>
tRAD
(0.5 + wRH) T − 10
ns
RAS to CAS delay time
<77>
tRCD
(1 + wRH) T − 10
ns
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
6. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
7. wF: Number of waits inserted to source-side access during DMA flyby transfer.
8. i: Number of idle states inserted when a write cycle follows the read cycle.
58
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(g) DMA flyby transfer timing (DRAM (EDO, high-speed page) → external I/O transfer) (2/3)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Output buffer turn-off delay time
(from OE↑)
<78>
tOEZ
0
ns
Output buffer turn-off delay time
(from CAS↑)
<79>
tOFF
0
ns
CAS precharge time
<81>
tCP
(0.5 + wCP) T − 10
ns
High-speed mode cycle time
<82>
tPC
(2 + wCP + wDA + wF + w) T − 10
ns
RAS hold time for CAS precharge
<83>
tRHCP
(2.5 + wCP + wDA + wF + w) T − 10
ns
RAS pulse width
<94>
tRASP
(2.5 + wRH + wDA + wF + w) T − 10
ns
Off-page
<96>
tOCH1
(2.5 + wRP + wRH + wDA + wF + w)
T − 10
ns
On-page
<97>
tOCH2
(1.5 + wCP + wDA + wF + w) T − 10
ns
Delay time from DMAAKm↓ to
CAS↓
<105>
tDDACS
(1.5 + wRH) T − 10
ns
Delay time from IOWR↓ to CAS↓
<106>
tDRDCS
(1 + wRH) T − 10
ns
Hold time from
OE to CAS
(from CAS↑)
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
6. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
7. wF: Number of waits inserted to source-side access during DMA flyby transfer.
8. m = 0 to 3
Data Sheet U13844EJ3V0DS
59
µPD70F3102-33
(g) DMA flyby transfer timing (DRAM (EDO, high-speed page) → external I/O transfer) (3/3)
TRPW
T1
T2
TRHW
TDAW
TW
T3
TCPW TO1 TDAW
TW
TO2
CLKOUT (Output)
<58>
<56>
A0 to A23 (Output)
<57>
<59>
Row address
Column address
Column address
<76>
<64>
<61>
<94>
<60>
RASn (Output)
<77>
<65>
<66>
<69>
<83>
<67>
<81>
<63>
UCAS (Output)
LCAS (Output)
<71>
<70>
<82>
<96>
<79>
RD (Output)
OE (Output)
<105>
<48>
<97>
DMAAKm (Output)
<68>
WE (Output)
IORD (Output)
<106>
<42>
<41>
<43>
<78>
<37>
<50>
IOWR (Output)
<24>
D0 to D15 (I/O)
Data
<25>
<24>
Data
<24>
<25>
<25>
WAIT (Input)
BCYST (Output)
Remarks 1. These timings are for the following cases (n = 0 to 3, xx = 00 to 03, 10 to 13):
Number of waits (TRPW) specified by RPCxx bit of register DRCn: 1
Number of waits (TRHW) specified by RHCxx bit of register DRCn: 1
Number of waits (TDAW) specified by DACxx bit of register DRCn: 1
Number of waits (TCPW) specified by CPCxx bit of register DRCn: 1
Number of waits inserted to source-side access during DMA flyby transfer: 0
2. Broken lines indicate high impedance.
3. n = 0 to 7, m = 0 to 3
60
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(h) DMA flyby transfer timing (external I/O → DRAM (EDO, high-speed page) transfer) (1/3)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
WAIT setup time (to CLKOUT↓)
<24>
tSWK
15
ns
WAIT hold time (from CLKOUT↓)
<25>
tHKW
2
ns
IORD low-level width
<32>
tWRDL
(2 + wRH + wDA + wF + w) T − 10
ns
IORD high-level width
<33>
tWRDH
T − 10
ns
Delay time from address to IORD↑
<34>
tDARD
0.5T − 10
ns
Delay time from IORD↑ to address
<35>
tDRDA
(0.5 + i) T − 10
ns
Row address setup time
<56>
tASR
(0.5 + wRP) T − 10
ns
Row address hold time
<57>
tRAH
(0.5 + wRH) T − 10
ns
Column address setup time
<58>
tASC
0.5T − 10
ns
Column address hold time
<59>
tCAH
(1.5 + wDA + wF) T − 10
ns
Read/write cycle time
<60>
tRC
(3 + wRP + wRH + wDA + wF + w) T − 10
ns
RAS precharge time
<61>
tRP
(0.5 + wRP) T − 10
ns
RAS hold time
<63>
tRSH
(1.5 + wDA + wF) T − 10
ns
Column address read time for RAS
<64>
tRAL
(2 + wCP + wDA + wF + w) T − 10
ns
CAS pulse width
<65>
tCAS
(1 + wDA + wF) T − 10
ns
CAS to RAS precharge time
<66>
tCRP
(1 + wRP) T − 10
ns
CAS hold time
<67>
tCSH
(2 + wRH + wDA + wF + w) T − 10
ns
CAS precharge time
<71>
tCPN
(2 + wRP + wRH + w) T − 10
ns
Delay time from RAS to column
address
<76>
tRAD
(0.5 + wRH) T − 10
ns
RAS to CAS delay time
<77>
tRCD
(1 + wRH + w) T − 10
ns
CAS precharge time
<81>
tCP
(0.5 + wCP + w) T − 10
ns
High-speed page mode cycle time
<82>
tPC
(2 + wCP + wDA + wF + w) T − 10
ns
RAS hold time for CAS precharge
<83>
tRHCP
(2.5 + wCP + wDA + w) T − 10
ns
WE hold time (from CAS↓)
<85>
tWCH
(1 + wDA ) T − 10
ns
WE read time (to RAS↑)
<88>
tRWL
wCP = 0
(1.5 + wDA + w) T − 10
ns
WE read time (to CAS↑)
<89>
tCWL
wCP = 0
(1 + wDA + w) T − 10
ns
WE pulse width
<92>
tWP
wCP = 0
(1 + wDA + w) T − 10
ns
RAS pulse width
<94>
tRASP
(2.5 + wRH + wDA + wF + w) T − 10
ns
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wDA: Number of waits specified by DACxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
6. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
7. wF: Number of waits inserted to source-side access during DMA flyby transfer.
8. i: Number of idle states inserted when a write cycle follows the read cycle.
Data Sheet U13844EJ3V0DS
61
µPD70F3102-33
(h) DMA flyby transfer timing (external I/O → DRAM (EDO, high-speed page) transfer) (2/3)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Off-page
<101>
tWCS1
wCP = 0
(1 + wRH + wRP + w) T − 10
ns
On-page
<102>
tWCS2
wCP ≥ 1
wCPT − 10
ns
Delay time from DMAAKm↓ to
CAS↓
<105>
tDDACS
(1.5 + wRH + w) T − 10
ns
Delay time from IORD↓ to CAS↓
<106>
tDRDCS
(1 + wRH + w) T − 10
ns
Delay time from WE↑ to IORD↑
<107>
tDWERD
wF = 0
0
ns
wF = 1
T − 10
ns
WE setup time
(to CAS↓)
Remarks 1. T = tCYK
2. w: Number of waits due to WAIT
3. wRH: Number of waits specified by RHCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
4. wRP: Number of waits specified by RPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
5. wCP: Number of waits specified by CPCxx bit of register DRCn (n = 0 to 3, xx = 00 to 03, 10 to 13)
6. wF: Number of waits inserted to source-side access during DMA flyby transfer.
7. m = 0 to 3
62
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(h) DMA flyby transfer timing (external I/O → DRAM (EDO, high-speed page) transfer) (3/3)
TRPW
T1
TRHW
TW
T2
TDAW
T3
TCPW
TW
TO1 TDAW TO2
CLKOUT (Output)
<56>
A0 to A23 (Output)
<57>
<58>
Row address
<59>
Column address
Column address
<76>
<64>
<61>
<94>
<60>
RASn (Output)
<77>
<65>
<66>
<67>
<63>
<81>
UCAS (Output)
LCAS (Output)
<71>
<82>
<83>
RD (Output)
OE (Output)
<101>
<102>
<88>
<89>
<85>
WE (Output)
<92>
<105>
DMAAKm (Output)
IOWR (Output)
<106>
<107>
<35>
<34>
IORD (Output)
<32>
<25>
<33>
D0 to D15 (I/O)
Data
<24>
<24>
<25>
Data
<24>
<25>
WAIT (Input)
BCYST (Output)
Remarks 1. These timings are for the following cases (n = 0 to 3, xx = 00 to 03, 10 to 13):
Number of waits (TRPW) specified by RPCxx bit of register DRCn: 1
Number of waits (TRHW) specified by RHCxx bit of register DRCn: 1
Number of waits (TDAW) specified by DACxx bit of register DRCn: 1
Number of waits (TCPW) specified by CPCxx bit of register DRCn: 1
Number of waits inserted to source-side access during DMA flyby transfer: 0
2. Broken lines indicate high impedance.
3. n = 0 to 7, m = 0 to 3
Data Sheet U13844EJ3V0DS
63
µPD70F3102-33
(i) CBR refresh timing
Parameter
RAS precharge time
RAS pulse width
Symbol
<61>
tRAS
<108>
MIN.
MAX.
Unit
(1.5 + wRRW ) T − 10
tRP
<62>
CAS hold time
Conditions
tCHR
ns
(1.5 + wRCW
Note
) T − 10
ns
(1.5 + wRCW
Note
) T − 10
ns
(3 +wRRW + wRCW
Note
) T − 10
ns
REFRQ pulse width
<109>
tWRFL
RAS precharge CAS hold time
<110>
tRPC
(0.5 + wRRW ) T − 10
REFRQ active delay time
(from CLKOUT↓)
<111>
tDKRF
2
10
ns
REFRQ inactive delay time
(from CLKOUT↓)
<112>
tHKRF
2
10
ns
CAS setup time
<113>
tCSR
T − 10
ns
ns
Note wRCW is inserted for at least 1 clock, regardless of the setting of bits RCW0 to RCW2 of register RWC.
Remarks 1. T = tCYK
2. wRRW : Number of waits specified by bits RRW0 and RRW1 of register RWC.
3. wRCW : Number of waits specified by bits RCW0 to RCW2 of register RWC.
TRRW
T1
T2
TRCWNote
TRCW
T3
TI
CLKOUT (Output)
<111>
<112>
<109>
REFRQ (Output)
<61>
<62>
RASn (Output)
<110>
<110>
<113>
<108>
UCAS (Output)
LCAS (Output)
Note This TRCW is always inserted, regardless of the setting of bits RCW0 to RCW2 of register RWC.
Remarks 1. These timings are for the following cases:
Number of waits (TRRW) specified by bits RRW0 and RRW1 of register RWC: 1
Number of waits (TRCW) specified by bits RCW0 to RCW2 of register RWC: 2
2. n = 0 to 7
64
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(j) CBR self refresh timing
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
REFRQ active delay time
(from CLKOUT↓)
<111>
tDKRF
2
10
ns
REFRQ inactive delay time
(from CLKOUT↓)
<112>
tHKRF
2
10
ns
CAS hold time
<114>
tCHS
−5
ns
RAS precharge time
<115>
tRPS
(1 + 2wSRW ) T − 10
ns
Remarks 1. T = tCYK
2. wSRW : Number of waits specified by bits SRW0 to SRW2 of register RWC.
TRRW
TH
TH
TH
TRCW
TH
TI
TSRW
TSRW
CLKOUT (Output)
<111>
<112>
REFRQ (Output)
<115>
RASn (Output)
<114>
UCAS (Output)
LCAS (Output)
Output signals
other than above
Remarks 1. These timings are for the following cases:
Number of waits (TRRW) specified by bits RRW0 and RRW1 of register RWC: 1
Number of waits (TRCW) specified by bits RCW0 to RCW2 of register RWC: 1
Number of waits (TSRW) specified by bits SRW0 to SRW2 of register RWC: 2
2. Broken lines indicate high impedance.
3. n = 0 to 7
Data Sheet U13844EJ3V0DS
65
µPD70F3102-33
(7) DMAC timing
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
DMARQn setup time
(to CLKOUT↑)
<116>
tSDRK
15
ns
DMARQn hold time
(from CLKOUT↑)
<117>
tHKDR1
2
ns
<118>
tHKDR2
Until DMAAKn↓
ns
DMAAKn output delay time
(from CLKOUT↓)
<119>
tDKDA
2
10
ns
DMAAKn output hold time
(from CLKOUT↓)
<120>
tHKDA
2
10
ns
TCn output delay time
(from CLKOUT↓)
<121>
tDKTC
2
10
ns
TCn output hold time
(from CLKOUT↓)
<122>
tHKTC
2
10
ns
Remark n = 0 to 3
CLKOUT (Output)
<117>
<116>
<118>
DMARQn (Input)
<116>
<119>
<120>
DMAAKn (Output)
<122>
<121>
TCn (Output)
Remark n = 0 to 3
66
Data Sheet U13844EJ3V0DS
µPD70F3102-33
[MEMO]
Data Sheet U13844EJ3V0DS
67
µPD70F3102-33
(8) Bus hold timing (1/2)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
HLDRQ setup time (to CLKOUT↑)
<123>
tSHRK
15
ns
HLDRQ hold time
(from CLKOUT↑)
<124>
tHKHR
2
ns
Delay time from CLKOUT↓ to
HLDAK
<125>
tDKHA
2
HLDRQ high-level width
<126>
tWHQH
T + 17
ns
HLDAK low-level width
<127>
tWHAL
T−8
ns
Delay time from CLKOUT↓ to bus
float
<128>
tDKCF
Delay time from HLDAK↑ to bus
output
<129>
tDHAC
0
ns
Delay time from HLDRQ↓ to
HLDAK↓
<130>
tDHQHA1
2.5T
ns
Delay time from HLDRQ↑ to
HLDAK↑
<131>
tDHQHA2
0.5T
Remark T = tCYK
68
Data Sheet U13844EJ3V0DS
10
10
1.5T
ns
ns
ns
µPD70F3102-33
(8) Bus hold timing (2/2)
T1
T2
T3
TI
TH
TH
TH
TI
T1
CLKOUT (Output)
<123>
<124>
<123>
<123>
<124>
<123>
<126>
HLDRQ (Intput)
<125>
<125>
<130>
<131>
HLDAK (Output)
<127>
<128>
A0 to A23 (Output)
D0 to D15 (I/O)
Address
<129>
Undefined
Data
CSn/RASn (Output)
BCYST (Output)
RD (Output)
WE (Output)
UCAS (Output)
LCAS (Output)
Remarks 1. Broken lines indicate high impedance.
2. n = 0 to 7
Data Sheet U13844EJ3V0DS
69
µPD70F3102-33
(9) Interrupt timing
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
NMI high-level width
<132>
tWNIH
500
ns
NMI low-level width
<133>
tWNIL
500
ns
INTPn high-level width
<134>
tWITH
4T + 10
ns
INTPn low-level width
<135>
tWITL
4T + 10
ns
Remarks 1. n = 100 to 103, 110 to 113, 120 to 123, 130 to 133, 140 to 143, and 150 to 153
2. T = tCYK
<132>
<133>
<134>
<135>
NMI (Input)
INTPn (Input)
Remark n = 100 to 103, 110 to 113, 120 to 123, 130 to 133, 140 to 143, and 150 to 153
(10) RPU timing
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
TI1n high-level width
<136>
tWTIH
3T + 18
ns
TI1n low-level width
<137>
tWTIL
3T + 18
ns
TCLR1n high-level width
<138>
tWTCH
3T + 18
ns
TCLR1n low-level width
<139>
tWTCL
3T + 18
ns
Remarks 1. n = 0 to 5
2. T = tCYK
<136>
<137>
<138>
<139>
TI1n (Input)
TCLR1n (Input)
Remark n = 0 to 5
70
Data Sheet U13844EJ3V0DS
µPD70F3102-33
(11) UART0, UART1 timing (synchronized with clock, master mode only)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
SCKn cycle
<140>
tCYSK0
Output
250
ns
SCKn high-level width
<141>
tWSK0H
Output
0.5tCYSK0 − 20
ns
SCKn low-level width
<142>
tWSK0L
Output
0.5tCYSK0 − 20
ns
RXDn setup time (to SCKn↑)
<143>
tSRXSK
30
ns
RXDn hold time (from SCKn↑)
<144>
tHSKRX
0
ns
TXDn output delay time
(from SCKn↓)
<145>
tDSKTX
TXDn output hold time
(from SCKn↑)
<146>
tHSKTX
20
0.5tCYSK0 − 5
ns
ns
Remark n = 0, 1
<140>
<141>
<142>
SCKn (I/O)
<143>
RXDn (Input)
<144>
Input data
<145>
<146>
TXDn (Output)
Output data
Remarks 1. Broken lines indicate high impedance.
2. n = 0, 1
Data Sheet U13844EJ3V0DS
71
µPD70F3102-33
(12) CSI0 to CSI3 timing
(a) Master mode
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
SCKn cycle
<147>
tCYSK1
Output
100
ns
SCKn high-level width
<148>
tWSK1H
Output
0.5tCYSK1 − 20
ns
SCKn low-level width
<149>
tWSK1L
Output
0.5tCYSK1 − 20
ns
SIn setup time (to SCKn↑)
<150>
tSSISK
30
ns
SIn hold time (from SCKn↑)
<151>
tHSKSI
0
ns
SOn output delay time (from SCKn↓)
<152>
tDSKSO
SOn output hold time (from SCKn↑)
<153>
tHSKSO
20
0.5tCYSK1 − 5
ns
ns
Remark n = 0 to 3
(b) Slave mode
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
SCKn cycle
<147>
tCYSK1
Input
100
ns
SCKn high-level width
<148>
tWSK1H
Input
30
ns
SCKn low-level width
<149>
tWSK1L
Input
30
ns
SIn setup time (to SCKn↑)
<150>
tSSISK
10
ns
SIn hold time (from SCKn↑)
<151>
tHSKSI
10
ns
SOn output delay time (from SCKn↓)
<152>
tDSKSO
SOn output hold time (from SCKn↑)
<153>
tHSKSO
30
tWSK1H
Remark n = 0 to 3
<147>
<148>
<149>
SCKn (I/O)
<150>
Sln (Input)
<151>
Input data
<152>
SOn (Output)
<153>
Output data
Remarks 1. Broken lines indicate high impedance.
2. n = 0 to 3
72
Data Sheet U13844EJ3V0DS
ns
ns
µPD70F3102-33
A/D Converter Characteristics (TA = −40 to +85°°C, VDD = CVDD = 3.0 to 3.6 V, HVDD = 5.0 V ±10%, VSS = 0 V,
HVDD − 0.5 V ≤ AVDD ≤ HVDD)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Resolution
−
Overall error
−
±4
LSB
Quantization error
−
±1/2
LSB
10
µs
10
Conversion time
tCONV
5
Sampling time
tSAMP
Conversion
clockNote/6
bit
ns
Zero scale error
−
±4
LSB
Scale error
−
±4
LSB
Linearity error
−
±3
LSB
AVREF + 0.3
V
Analog input voltage
VIAN
Analog input resistance
RAN
AVREF input voltage
AVREF
AVREF input current
AVDD current
−0.3
2
AVREF = AVDD
4.5
MΩ
5.5
V
AIREF
2.0
mA
AIDD
6
mA
Note The conversion clock is the clock value set by the ADM1 register.
Data Sheet U13844EJ3V0DS
73
µPD70F3102-33
4.2
Flash Memory Programming Mode
Basic Characteristics (TA = −40 to +85°°C (Other Than When Rewriting), HVDD = AVDD = 4.5 to 5.5 V,
VDD = 3.0 to 3.6 V, VSS = AVSS = 0 V) (1/2)
Parameter
Operating frequency
VPP supply voltage
Symbol
Conditions
fX
TYP.
MAX.
Unit
33
MHz
8.1
V
1.2VDD
V
20
VPP1
During flash memory
programming
VPPL
VPP low-level detection
0.8VDD
VPPM
VPP and VDD level
detection
0.65VDD
VDD
VDD + 0.3
V
VPPH
VPP high-voltage level
detection
7.5
7.8
8.1
V
50
mA
150
mA
HVDD supply current
IDD
VPP = VPP1
VPP supply current
IPP
VPP = 8.1 V
Step erase time
MIN.
tER
7.5
7.8
Note 1
K, P category
5
s
0.2
s
(Recommendation:
Step erase = 5 s)
Other than K, P
categoryNote 1
(Recommendation:
Step erase = 0.2 s)
Total erase time
tERA
K, P categoryNote 1
60
s
20
s
1.01
ms
When step erase time
=5s
Note 2
Other than K, P
categoryNote 1
When step erase time
= 0.2 s
Note 2
Write-back time
tWB
Note 3
0.99
1
Notes 1. The category is indicated by the fifth letter from the left of the lot number.
2. The prewrite time prior to erasure and the erase verify time (write-back time) are not included.
3. The recommended set value of the write-back time is 1 ms.
Caution The I category is applied to engineering samples only. The number of rewrites is not guaranteed
for I category products.
Remark When PG-FP3 is used, the time parameters required for write/erase are automatically set by
downloading parameter files. Do not change the set values unless otherwise specified.
74
Data Sheet U13844EJ3V0DS
µPD70F3102-33
Basic Characteristics (TA = −40 to +85°°C (Other Than When Rewriting), HVDD = AVDD = 4.5 to 5.5 V,
VDD = 3.0 to 3.6 V, VSS = AVSS = 0 V) (2/2)
Parameter
Symbol
Number of write-backs per writeback command
Number of erase/write-backs
Step write time
CWB
Number of rewrites
MIN.
TYP.
When write-back
time = 1 ms
Note 1
CERWB
tWT
Total write time per word
Conditions
tWTW
CERWR
Note 2
18
Setting: Step write
time = 20 µs
(1 word = 4 bytes)
Note 3
20
K categoryNote 4
20
MAX.
Unit
300
Times/writeback
command
16
Times
22
µs
200
µs/word
5
Tiimes
Note 4
P category
10
Times
Other than K, P
categoryNote 4
20
Times
One erase + one
write after erase =
one rewrite
Note 5
Temperature during write
TPRG
K, P categoryNote 4
10
40
°C
Other than K, P
categoryNote 4
10
85
°C
Notes 1. When the write-back command is issued, write-back is performed once. Therefore, the retry count
must be the maximum value minus the number of commands issued.
2. The recommended set value of the step write time is 20 µs.
3. The actual write time per word is the sum of this value plus 100 µs. The internal verify time during and
after write is not included.
4. The category is indicated by the fifth letter from the left of the lot number.
5. When writing initially to shipped products, “erase to write” and “write only” are both counted as one
rewrite.
Example (P: Write E: Erase)
Product
→ P → E → P → E → P: Three rewrites
Product → E → P → E → P → E → P: Three rewrites
Caution The I category is applied to engineering samples only. The number of rewrites is not guaranteed
for I category products.
Remark When PG-FP3 is used, the time parameters required for write/erase are automatically set by
downloading parameter files. Do not change the set values unless otherwise specified.
Data Sheet U13844EJ3V0DS
75
µPD70F3102-33
Serial Write Operation Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VDD↑ to VPP↑ set time
<201>
tDRPSR
200
ns
VPP↑ to RESET↑ set time
<202>
tPSRRF
1
µs
RESET↑ to VPP count start time
<203>
tRFOF
5T + 500
µs
Count execution time
<204>
tCOUNT
VPP counter high-level width
<205>
tCH
1
µs
VPP counter low-level width
<206>
tCL
1
µs
VPP counter rise time
<207>
tR
3
µs
VPP counter fall time
<208>
tF
3
µs
VPP = 7.8 V
10
VDD, HVDD
VDD, HVDD
0V
<204>
<201>
<203>
<206>
<205>
<207>
VPPH
VPP
VDD
<208>
0V
<202>
HVDD
RESET (Input)
0V
76
Data Sheet U13844EJ3V0DS
ms
µPD70F3102-33
5. PACKAGE DRAWINGS
144-PIN PLASTIC LQFP (FINE PITCH) (20x20)
A
B
108
109
73
72
detail of lead end
S
C
D
R
Q
144
1
37
36
F
G
H
I
J
M
K
P
S
N
S
L
M
NOTE
ITEM
Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
MILLIMETERS
A
22.0±0.2
B
20.0±0.2
C
20.0±0.2
D
22.0±0.2
F
1.25
G
1.25
H
0.22 +0.05
−0.04
I
J
0.10
0.5 (T.P.)
K
1.0±0.2
L
0.5±0.2
M
0.145+0.055
−0.045
N
0.10
P
1.4±0.1
Q
0.125±0.075
R
3° +7°
−3°
S
1.7 MAX.
S144GJ-50-8EU-3
Data Sheet U13844EJ3V0DS
77
µPD70F3102-33
144-PIN PLASTIC LQFP (FINE PITCH) (20x20)
A
B
108
109
73
72
detail of lead end
S
C
D
R
Q
144
1
37
36
F
G
H
I
J
M
K
P
S
N
S
L
M
NOTE
Each lead centerline is located within 0.08 mm of
its true position (T.P.) at maximum material condition.
ITEM
A
MILLIMETERS
22.0±0.2
B
C
20.0±0.2
20.0±0.2
D
22.0±0.2
F
1.25
G
1.25
H
0.22±0.05
I
0.08
J
0.5 (T.P.)
K
1.0±0.2
L
0.5±0.2
M
0.17 +0.03
−0.07
N
P
0.08
1.4
Q
0.10±0.05
R
3° +4°
−3°
S
1.5±0.1
S144GJ-50-UEN
78
Data Sheet U13844EJ3V0DS
µPD70F3102-33
6. RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For the details of the recommended soldering conditions, refer to the document “Semiconductor Device
Mounting Technology Manual (C10535E)”.
For soldering methods and conditions other than those recommended below, contact your NEC sales
representative.
Table 6-1. Surface Mounting Type Soldering Conditions
µPD70F3102GJ-33-8EU: 144-pin plastic LQFP (fine pitch) (20 × 20)
µPD70F3102GJ-33-UEN: 144-pin plastic LQFP (fine pitch) (20 × 20)
Soldering Method
Infrared reflow
Soldering Conditions
Package peak temperature: 235°C, Time: 30 seconds max. (at
210°C or higher), Count: Twice or less, Exposure limit: 3 daysNote
Recommended Condition Symbol
IR35-103-2
(after that, prebake at 125°C for 10 hours)
VPS
Package peak temperature: 215°C, Time: 25 to 40 seconds max.
(at 200°C or higher), Count: Twice or less, Exposure limit: 3
daysNote (after that, prebake at 125°C for 10 hours)
Partial heating
Pin temperature: 300°C max., Time: 3 seconds max. (per pin row)
VP15-103-2
−
Note After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period.
Data Sheet U13844EJ3V0DS
79
µPD70F3102-33
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Related Documents µPD70F3102A-33 Data Sheet (U13845E)
µPD703100-33, 703100-40, 703101-33, 703102-33 Data Sheet (U13995E)
µPD703100A-33, 703100A-40, 703101A-33, 703102A-33 Data Sheet (U14168E)
The related documents in this publication may include preliminary versions. However, preliminary versions
are not marked as such.
The V850E/MS1 is a trademark of NEC Corporation.
80
Data Sheet U13844EJ3V0DS
µPD70F3102-33
Regional Information
Some information contained in this document may vary from country to country. Before using any NEC
product in your application, pIease contact the NEC office in your country to obtain a list of authorized
representatives and distributors. They will verify:
•
Device availability
•
Ordering information
•
Product release schedule
•
Availability of related technical literature
•
Development environment specifications (for example, specifications for third-party tools and
components, host computers, power plugs, AC supply voltages, and so forth)
•
Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
from country to country.
NEC Electronics Inc. (U.S.)
NEC Electronics (Germany) GmbH
NEC Electronics Hong Kong Ltd.
Santa Clara, California
Tel: 408-588-6000
800-366-9782
Fax: 408-588-6130
800-729-9288
Benelux Office
Eindhoven, The Netherlands
Tel: 040-2445845
Fax: 040-2444580
Hong Kong
Tel: 2886-9318
Fax: 2886-9022/9044
NEC Electronics Hong Kong Ltd.
Velizy-Villacoublay, France
Tel: 01-3067-5800
Fax: 01-3067-5899
Seoul Branch
Seoul, Korea
Tel: 02-528-0303
Fax: 02-528-4411
NEC Electronics (France) S.A.
NEC Electronics Singapore Pte. Ltd.
Milton Keynes, UK
Tel: 01908-691-133
Fax: 01908-670-290
Madrid Office
Madrid, Spain
Tel: 091-504-2787
Fax: 091-504-2860
Novena Square, Singapore
Tel: 253-8311
Fax: 250-3583
NEC Electronics Italiana s.r.l.
NEC Electronics (Germany) GmbH
Milano, Italy
Tel: 02-66 75 41
Fax: 02-66 75 42 99
Scandinavia Office
Taeby, Sweden
Tel: 08-63 80 820
Fax: 08-63 80 388
NEC Electronics (France) S.A.
NEC Electronics (Germany) GmbH
Duesseldorf, Germany
Tel: 0211-65 03 02
Fax: 0211-65 03 490
NEC Electronics (UK) Ltd.
NEC Electronics Taiwan Ltd.
Taipei, Taiwan
Tel: 02-2719-2377
Fax: 02-2719-5951
NEC do Brasil S.A.
Electron Devices Division
Guarulhos-SP, Brasil
Tel: 11-6462-6810
Fax: 11-6462-6829
J01.2
Data Sheet U13844EJ3V0DS
81
µPD70F3102-33
• The information in this document is current as of March, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4