ETC DMV1500HF5

DMV1500H
®
DAMPER + MODULATION DIODE FOR VIDEO
DAMPER
MODULATION
MAIN PRODUCT CHARACTERISTICS
MODUL
DAMPER
IF(AV)
3A
6A
VRRM
600 V
1500 V
trr (max)
50 ns
125 ns
VF (max)
1.4 V
1.7 V
1
2
3
1
■
■
■
■
■
■
■
3
Insulated TO-220AB
(Bending option F5 available)
FEATURES AND BENEFITS
■
2
Full kit in one package
High breakdown voltage capability
Very fast recovery diode
Specified turn on switching characteristics
Low static and peak forward voltage drop for low
dissipation
Insulated version:
Insulated voltage = 2500 VRMS
Capacitance = 7 pF
Planar technology allowing high quality and
best electrical characteristics
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks
to the internal ceramic insulation layer.
ABSOLUTE RATINGS (limiting values, per diode)
Value
Symbol
Parameter
Unit
MODUL DAMPER
VRRM
Repetitive peak reverse voltage
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
tp = 10 ms sinusoidal
Maximum operating junction temperature
July 2001 - Ed: 6A
600
1500
V
35
80
A
- 40 to + 150
°C
150
1/9
DMV1500H
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
Damper junction to case
Rth(j-c)
Modulation junction to case
Value
Unit
3.6
°C/W
6
STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES
Value
Symbol
Parameter
Test conditions
VF *
Forward voltage drop
IF = 6 A
IR **
Reverse leakage current
VR = 1500V
Pulse test :
Tj = 25°C
Tj = 125°C
Unit
Typ.
Max.
Typ.
Max.
1.5
2.3
1.25
1.7
V
100
100
1000
µA
* tp = 380 µs, δ < 2%
**tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
2
P = 1.35 x IF(AV) + 0.059 x IF (RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE
Value
Symbol
Parameter
Test
conditions
Tj = 25°C
Typ.
Tj = 125°C
Unit
Max.
Typ.
Max.
VF *
Forward voltage drop
IF = 3A
1.8
1.1
1.4
V
IR **
Reverse leakage current
VR = 600V
20
3
50
µA
Pulse test :
* tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
2
P = 1.2 x IF(AV) + 0.066 x IF (RMS)
RECOVERY CHARACTERISTICS OF THE DAMPER DIODE
Parameter
trr
Reverse recovery time
IF = 100mA
IR = 100mA
IRR = 10mA
Tj = 25°C
625
trr
Reverse recovery time
IF = 1A
dIF/dt = -50A/µs
VR = 30V
Tj = 25°C
95
2/9
Test conditions
Value
Symbol
Typ.
Max.
Unit
ns
125
ns
®
DMV1500H
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE
Symbol
Parameter
Test conditions
trr
Reverse recovery time
IF = 100mA
IR = 100mA
IRR = 10mA
Tj = 25°C
trr
Reverse recovery time
IF = 1A
dIF/dt = -50A/µs
VR = 30V
Tj = 25°C
Value
Unit
Typ.
Max.
110
350
ns
50
ns
TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE
Test conditions
Value
Symbol
Parameter
tfr
Forward recovery time
IF = 6A
dIF/dt = 80A/µs
VFR = 3V
Tj = 100°C
350
VFP
Peak forward voltage
IF = 6A
dIF/dt = 80A/µs
Tj = 100°C
18
Typ.
Max.
Unit
ns
25
V
TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE
Parameter
tfr
Forward recovery time
IF = 3A
dIF/dt = 80A/µs
VFR = 2V
Tj = 100°C
240
ns
VFP
Peak forward voltage
IF = 3A
dIF/dt = 80A/µs
Tj = 100°C
8
V
®
Test conditions
Value
Symbol
Typ.
Max.
Unit
3/9
DMV1500H
Fig. 1-1: Power dissipation versus peak forward
current (triangular waveform, δ = 0.45) (damper
diode).
Fig. 1-2: Power dissipation versus peak forward
current (triangular waveform, δ = 0.45) (modulation diode).
PF(av)(W)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
PF(av)(W)
Ip(A)
0
1
2
3
4
5
6
Fig. 2-1: Average forward current versus ambient
temperature (damper diode).
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
Fig. 2-2: Average forward current versus ambient
temperature (modulation diode).
IF(av)(A)
IF(av)(A)
8
4.0
7
3.5
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
6
3.0
5
2.5
4
2.0
3
1.5
T
2
1
0
Ip(A)
δ=tp/T
0
0.5
Tamb(°C)
tp
25
T
1.0
50
75
100
125
150
Fig. 3-1: Forward voltage drop versus forward
current (damper diode).
0.0
δ=tp/T
0
25
50
75
100
125
150
Fig. 3-2: Forward voltage drop versus forward
current (modulation diode).
IFM(A)
IFM(A)
15.0
Typical
Tj=125°C
10.0
Maximum
Tj=125°C
Maximum
Tj=25°C
5.0
VFM(V)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
4/9
Tamb(°C)
tp
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
Typical
Tj=125°C
Maximum
Tj=125°C
Maximum
Tj=25°C
VFM(V)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
®
DMV1500H
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (damper diode).
IM(A)
K=[Zth(j-c)/Rth(j-c)]
40
1.0
Tc=100°C
35
δ = 0.5
30
0.5
δ = 0.2
25
δ = 0.1
20
15
0.2
T
10
Single pulse
tp(s)
0.1
1E-3
1E-2
δ=tp/T
1E-1
IM
tp
5
1E+0
0
1E-3
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (modulation diode).
t
t(s)
δ=0.5
1E-2
1E-1
1E+0
Fig. 6-1: Reverse recovery charges versus dIF/dt
(damper diode).
IM(A)
Qrr(nc)
30
Tc=100°C
1200
25
1000
20
800
15
600
10
IF= 6A
90% confidence
Tj=125°C
400
IM
5
t
0
1E-3
200
t(s)
δ=0.5
1E-2
dIF/dt(A/µs)
1E-1
1E+0
Fig. 6-2: Reverse recovery charges versus dIF/dt
(modulation diode).
IF= 3A
90% confidence
Tj=125°C
150
100
50
dIF/dt(A/µs)
®
0.2
0.5
1.0
2.0
5.0
Fig. 7-1: Reverse recovery current versus dIF/dt
(damper diode).
IRM(A)
Qrr(nC)
200
0
0.1
0
0.1
1.0
10.0
100.0
2.4
IF= 6A
2.2 90% confidence
Tj=125°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
0.2
dIF/dt(A/µs)
0.5
1.0
2.0
5.0
5/9
DMV1500H
Fig. 7-2: Reverse recovery current versus dIF/dt
(modulation diode).
Fig. 8-1: Transient peak forward voltage versus
dIF/dt (damper diode).
IRM(A)
VFP(V)
6
40
IF= 3A
90% confidence
Tj=125°C
5
IF= 6A
90% confidence
Tj=125°C
35
30
4
25
20
3
15
2
10
1
5
dIF/dt(A/µs)
0
1
10
0
100
200
Fig. 8-2: Transient peak forward voltage versus
dIF/dt (modulation diode).
dIF/dt(A/µs)
0
dIF/dt(A/µs)
20
40
60
80
100 120 140 160 180 200
Fig. 9-2: Forward recovery time versus dIF/dt
(modulation diode).
800
750
700
650
600
550
500
450
400
350
300
100
120
140
IF= 6A
90% confidence
Tj=125°C
VFR=3V
dIF/dt(A/µs)
0
20
40
60
80
100
120
140
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]
IF= 3A
90% confidence
Tj=125°C
Vfr=2V
175
150
1.2
1.0
125
0.8
100
0.6
75
VFP
IRM
0.4
50
25
6/9
80
Fig. 10: Dynamic parameters versus junction temperature (damper & modulation diodes).
tfr(ns)
200
0
60
tfr(ns)
IF= 3A
90% confidence
Tj=125°C
0
40
Fig. 9-1: Forward recovery time versus dIF/dt
(damper diode).
VFP(V)
12
11
10
9
8
7
6
5
4
3
2
1
0
20
dIF/dt(A/µs)
0
20
40
60
80
100 120 140 160 180 200
Qrr
0.2
0.0
Tj(°C)
0
20
40
60
80
100
120
140
®
DMV1500H
Fig. 11: Junction capacitance versus reverse voltage
applied (typical values) (damper & modulation
diodes).
C(pF)
100
Tj=25°C
F=1MHz
10
Modulation
VR(V)
1
1
10
100
200
ORDERING INFORMATION
DMV1500H
/
F5
LEAD BENDING (OPTION)
DAMPER AND MODULATION DIODES FORVIDEO
®
7/9
DMV1500H
PACKAGE MECHANICAL DATA
TO-220AB F5 OPTION
DIMENSIONS
REF.
B
Millimeters
Inches
Min.
Max.
Min.
Max.
A
15.20
15.90
0.598
0.625
a1
24.16
26.90
0.951
1.059
a3
1.65
2.41
0.064
0.094
B
10.00
10.40
0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
R2 a3
e
2.40
2.70
0.094
0.106
R1
F
6.20
6.60
0.244
0.259
I
3.75
3.85
0.147
0.151
L
2.65
2.95
0.104
0.116
I2
1.14
1.70
0.044
0.066
C
b2
L
F
ØI
A
l4
a1
c2
l3
l2
c2
b1
c1
M1
e
l3
1.14
1.70
0.044
0.066
l4
15.80
16.80
0.622
0.661
16.40 typ.
M1
PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT
■
■
■
2.92
3.30
0.645 typ.
0.114
0.129
R1
1.40 typ.
0.055 typ.
R2
1.40 typ.
0.055 typ.
Cooling method: by conduction (c)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
3.1mm
1mm
2.2mm
2.54mm
8/9
®
DMV1500H
PACKAGE MECHANICAL DATA
TO-220AB
DIMENSIONS
REF.
B
C
b2
A
Millimeters
Min.
Typ. Max. Min.
Typ. Max.
15.20
15.90 0.598
0.625
a1
L
F
I
A
Inches
3.75
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88 0.024
0.034
b2
1.23
1.32 0.048
0.051
C
4.40
4.60 0.173
0.181
c1
0.49
0.70 0.019
0.027
c2
2.40
2.72 0.094
0.107
e
2.40
2.70 0.094
0.106
F
6.20
6.60 0.244
0.259
I
3.75
3.85 0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95 0.104
0.116
l2
1.14
1.70 0.044
0.066
l3
1.14
1.70 0.044
0.066
l4
c2
a1
l3
l2
a2
b1
M
c1
e
M
■
■
■
■
2.60
0.102
Cooling method: by conduction (c)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
Type
Marking
Package
Weight
Base qty
Delivery mode
DMV1500H
DMV1500HF5
DMV1500H
TO-220AB
2.2 g.
50
Tube
Epoxy meets UL94, V0
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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®
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