STMICROELECTRONICS DMV1500SDFD

DMV1500SD
®
DAMPER + MODULATION DIODE FOR VIDEO
Table 1: Main Product Characteristics
DAMPER
MODUL.
IF(AV)
6A
6A
VRRM
1500 V
600 V
trr (typ)
150 ns
60 ns
VF (typ)
1.1 V
1.0 V
DAMPER
1
MODULATION
2
3
FEATURES AND BENEFITS
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■
■
■
■
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Full kit in one package
High breakdown voltage capability
Very fast recovery diode
Specified turn on switching characteristics
Low static and peak forward voltage drop for
low dissipation
Insulated version:
Insulated voltage = 2000 VRMS
1
2
3
TO-220FPAB
DMV1500SDFD
Capacitance = 7 pF
Planar technology allowing high quality and
best electrical characteristics
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
3
1
2
TO-220FPAB FD6
DMV1500SDFD6
(optional)
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220FPAB package includes
both the DAMPER diode and the MODULATION
diode, thanks to a dedicated design.
Assembled on automated line, it offers very low
dispersion values on insulating and thermal
performanes.
October 2004
Table 2: Order Codes
REV. 1
Part Number
DMV1500SDFD
DMV1500SDFD6
Marking
DMV1500SD
DMV1500SD
1/8
DMV1500SD
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
VRRM
Repetitive peak reverse voltage
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Value
Parameter
Unit
Damper
Modul.
1500
600
V
50
50
A
tp = 10ms sinusoidal
-40 to +150
°C
150
°C
Maximum operating junction temperature
Table 4: Thermal resistances
Symbol
Rth(j-c)
Parameter
Value (max.)
Unit
4
°C/W
Junction to case thermal resistance
Table 5: Static Electrical Characteristics
Value
Symbol
Parameter
Test conditions
Tj = 25°C
Typ.
IR *
VF **
Pulse test:
Reverse leakage current
Forward voltage drop
Tj = 125°C
Max.
Typ.
Max.
Damper
VR = 1500 V
100
100
1000
Modul.
VR = 600 V
3
3
30
Damper
IF = 6 A
1.2
1.75
1.1
1.5
Modul.
IF = 6 A
1.15
1.4
1
1.25
Unit
µA
V
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations :
2
DAMPER: P = 1.2 x IF(AV) + 0.050 x IF (RMS)
2
MODULATION: P = 0.89 x IF(AV) + 0.055 x IF (RMS)
Table 6: Recovery Characteristics
Value
Symbol
trr
2/8
Parameter
Reverse recovery time
Test conditions
IF = 100mA
IR =100mA
IRR = 10mA
Tj = 25°C
IF = 1A
dIF/dt = -50 A/µs Tj = 25°C
VR =30V
Damper
Modul.
Typ.
Max.
Typ.
Max.
1000
2000
250
400
Unit
ns
150
250
60
85
DMV1500SD
Table 7: Turn-On Switching Characteristics
Symbol
Parameter
tfr
Typ.
Max.
350
500
Damper
IF = 6 A
dIF/dt = 80 A/µs
VFR = 3 V
Tj = 100°C
Modul.
IF = 6 A
dIF/dt = 80 A/µs
VFR = 2 V
Tj = 100°C
70
125
Damper
IF = 6 A
dIF/dt = 80 A/µs
Tj = 100°C
26
36
Modul.
IF = 6 A
dIF/dt = 80 A/µs
Tj = 100°C
Forward recovery time
VFP
Value
Test conditions
Peak forward voltage
Figure 1: Power dissipation versus peak
forward current (triangular waveform, δ=0.45)
(damper diode)
Unit
ns
V
5
7.5
Figure 2: Power dissipation versus peak
forward current (triangular waveform, δ=0.45)
(modulation diode)
PF(AV)(W)
PF(AV)(W)
2.0
1.6
1.8
1.4
1.6
1.2
1.4
1.0
1.2
0.8
1.0
0.8
0.6
0.6
0.4
0.4
0.2
0.2
IP(A)
IP(A)
0.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.0
6.0
Figure 3: Average forward current versus
ambient temperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 4: Forward voltage drop versus forward
current (damper diode)
IFM(A)
IF(AV)(A)
15
7
14
Rth(j-a)=Rth(j-c)
Tj=125°C
(maximum values)
13
DAMPER diode
6
12
11
5
10
9
4
MODULATION diode
Tj=125°C
(typical values)
8
7
3
Tj=25°C
(maximum values)
6
5
2
4
T
3
1
2
δ=tp/T
0
0
Tamb(°C)
tp
1
VFM(V)
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
3/8
DMV1500SD
Figure 5: Forward voltage drop versus forward
current (modulation diode)
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration
Zth(j-c)/Rth(j-c)
IFM(A)
1.0
10
9
0.9
Tj=125°C
(maximum values)
8
0.8
7
0.7
6
0.6
MODULATION diode
DAMPER diode
Tj=125°C
(typical values)
0.5
5
Tj=25°C
(maximum values)
4
0.4
3
0.3
2
0.2
1
0.1
VFM(V)
0
tp(s)
Single pulse
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 7: Reverse recovery charges versus
dI F/dt (damper diode)
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
Figure 8: Reverse recovery charges versus dIF/
dt (modulation diode)
Qrr(nC)
Qrr(µC)
300
4.0
IF=IP
Tj=125°C
IF=IP
Tj=125°C
3.5
1.E-02
250
3.0
200
2.5
150
2.0
1.5
100
1.0
50
0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0.0
0
0.1
1.0
10.0
100.0
Figure 9: Peak reverse recovery current versus
dIF/dt (damper diode)
0.1
1.0
10.0
100.0
Figure 10: Peak reverse recovery current
versus dIF/dt (modulation diode)
IRM(A)
IRM(A)
4.5
4.0
IF=IP
Tj=125°C
4.0
IF=IP
Tj=125°C
3.5
3.5
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0.0
0.0
0.1
4/8
1.0
10.0
0.1
1.0
10.0
100.0
DMV1500SD
Figure 11: Transient peak forward voltage
versus dIF/dt (damper diode, typical values)
Figure 12: Transient peak forward voltage
versus dIF/dt (modulation diode, typical values)
VFP(V)
VFP(V)
50
10
IF=IP
Tj=100°C
45
IF=IP
Tj=100°C
9
40
8
35
7
30
6
25
5
20
4
15
3
10
2
5
1
dIF/dt(A/µs)
0
dIF/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
Figure 13: Forward recovery time versus dIF/dt
(damper diode, typical values)
0
20
40
60
80
100
120
140
160
180
200
Figure 14: Forward recovery time versus dIF/dt
(modulation diode, typical values)
tfr(ns)
tfr(ns)
800
140
IF=IP
Tj=100°C
VFR=3V
700
IF=IP
Tj=100°C
VFR=2V
120
600
100
500
80
400
60
300
40
200
20
100
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
20
40
60
80
100
120
140
160
180
200
Figure 15: Relative variation of dynamic
parameters versus junction temperature
0
20
40
60
80
100
120
140
160
180
200
Figure 16: Junction capacitance versus
reverse voltage applied (typical values)
IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C]
C(pF)
1.2
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
1.0
MODULATION diode
0.8
VFP
0.6
10
DAMPER diode
IRM
0.4
QRR
0.2
Tj(°C)
VR(V)
1
0.0
25
50
75
100
125
1
10
100
1000
5/8
DMV1500SD
Figure 17: TO-220FPAB FD6 Option Package Mechanical Data
DIMENSIONS
REF.
A
A
B
H
Dia
L6
L2
L7
L4
D
L3
M1
F
E
Max.
Min.
Max.
4.4
4.9
0.173
0.192
B
2.5
2.9
0.098
0.114
D
2.45
2.75
0.096
0.108
E
0.4
0.7
0.016
0.028
F
0.6
1
0.024
0.039
G
4.95
5.2
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.7
0.394
0.421
L2
12.7
12.8
0.500
0.504
4.2
0.150
0.165
L6
2.8
3.2
0.110
0.126
L7
9
9.9
0.354
0.390
3.75 Typ.
7
R
Dia.
Figure 18: TO-220FPAB FD6 PCB layout
(typical, in millimeters)
2.54
7.5
2.2
7.9
1.0
6/8
0.189 Typ.
3.8
M2
G
4.8 Typ.
L4
M1
M2
Inches
Min.
L3
L5
G1
Millimeters
8
1 Typ.
2.9
0.148 Typ.
0.276
0.315
0.039 Typ.
3.5
0.114
0.138
DMV1500SD
Figure 19: TO-220FPAB Package Mechanical Data
REF.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.9
0.173
0.192
2.5
2.9
0.098
0.114
2.45
2.75
0.096
0.108
0.4
0.7
0.016
0.027
0.6
1
0.024
0.039
1.15
1.7
0.045
0.067
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.205
2.4
2.7
0.094
0.106
10
10.7
0.393
0.421
16 Typ.
0.630 Typ.
28.6
30.6
1.126
1.205
9.8
10.7
0.385
0.421
15.8
16.4
0.622
0.646
9
9.9
0.354
0.390
2.9
3.5
0.114
0.138
Table 8: Ordering Information
Part Number
Marking
Package
Weight
Base qty
DMV1500SDFD
DMV1500SDFD6
DMV1500SD
DMV1500SD
TO-220FPAB
TO-220FPAB FD6
2.4 g
2.4 g
50
45
Delivery
mode
Tube
Tube
Table 9: Revision History
Date
Revision
25-Oct-2004
1
Description of Changes
First issue
7/8
DMV1500SD
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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