P35-4215-0 Marconi Optical Components GaAs MMIC SPDT Reflective/Non-Reflective Switch, DC - 4GHz Features · · · · · Broadband performance Low insertion loss; 0.5dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Chip form Description The P35-4215-0 is a high performance Gallium Arsenide single pole double throw broadband RF switch MMIC. It is suitable for use in broadband communications and instrumentation applications. The isolated port of the switch can be terminated with either an on-chip 50Ω load or a short-circuit. Control is effected by the application of complimentary 0V and -5V levels to the control lines in accordance with the truth table below. This die is fabricated using MOCs 0.5µm gate length MESFET process (S20) and is fully protected using Silicon Nitride passivation for excellent performance and reliability. This device is also available packaged in a hermetic 8-lead gullwing flatpack (see P35-4215-1R & P35-4215-1T). Electrical Performance Ambient temperature = 22±3 °C , ZO = 50Ω, Control voltages = 0V/-5V unless otherwise stated. Parameter Insertion Loss Isolation Input Return Loss1 Output Return Loss1 1dB power compression point2 Switching Speed Third Order Intercept3 Conditions DC - 2GHz 2 - 4GHz DC - 2GHz 2 - 4GHz DC - 2GHz 2 - 4GHz DC - 2GHz 2 - 4GHz 0/-5V Control; 50MHz 0/-5V Control; 0.25 - 4GHz 0/-8V Control; 50MHz 0/-8V Control; 0.25 - 4GHz 50% Control to 10%90%RF 500MHz Notes 1. Return Loss measured in low loss switch state 2. Input power at which insertion loss compresses by 1dB 3. Input power 10dBm/tone Reflective Min Typ Max 32 26 15 10 15 10 - 0.5 0.9 34 28 25 20 25 20 21 23 25 31 3 46 0.6 1.0 - Terminated Min Typ Max Units - 21 16 15 10 15 10 - dB dB dB dB dB dB dB dB dBm dBm dBm dBm ns dBm 0.6 1.4 23 17 25 20 25 20 20 24 25 32 3 46 0.7 1.5 - Typical Performance at 22°C Insertion Loss Isolation Reflective Terminated Terminated Input Return Loss Absolute Maximum Ratings Max control voltage Max I/P power Operating temperature Storage temperature -8V +33 dBm -60°C to +125°C -65°C to +150°C Reflective Output Return Loss P35-4125-0 Marconi Optical Components Chip Outline Chip size: Bond pad size: Chip thickness: Electrical Schematic 0.71 x 0.91mm 90µm x 90µm minimum 210µm Switching Truth Table A B RF IN-RF1 RF IN-RF 2 0V -5V -5V 0V Low Loss Isolated Isolated Low Loss Switching Truth Table The P35-4215-0 can be connected such that the isolated switch output is either terminated in 50Ω or in a reflective short circuit. A reflective configuration is obtained by bonding GND-R1 and GND-R2 to ground. A terminated configuration is obtained by bonding GND-T1 and GND-T2 to ground. In both cases at least two low inductance bondwires should be attached to each pad. Chip Handling, Mounting and Bonding The back of the chip is gold metallized and can be die-attached manually onto gold, eutectically with Au-Sn (80:20) or with low temperature conductive epoxy. The maximum allowable chip temperature is 310°C for 2 minutes. Bonds should be made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. Bonding should be achieved with the chip face at 225°C to 275°C with a heated thermosonic wedge (approx. 125°C) and a maximum force of 60 grams. Ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. The length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the RF and ground pads. Ordering Information: P35-4215-0 462/SM/00025/200 Iss 1/2 The data and product specifications are subject to change without notice. These devices should not be used for device qualification and production without prior notice. © Marconi Optical Components Ltd 2001 MOC, Caswell, Towcester, Northants, NN12 8EQ, Tel:+44 1327 356468 Fax +44 1327 356698 www.moc.marconi.com