Ordering number : ENN7198 2SA1179N / 2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features • Package Dimensions Miniature package facilitates miniaturization in end products. High breakdown voltage. unit : mm 2204 [2SA1179N / 2SC2812N] 0.42 3 0.55 • 0.131 1 2 0.95 0.95 2.4 0.55 1.3 0 ‘0.1 0.4 0.97 1.9 2.92 1 : Base 2 : Emitter 3 : Collector SANYO : CPA Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)55 Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current Base Current IC ICP IB Collector Dissipation PC 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current (Pulse) (--)150 V mA (--)300 mA (--)30 mA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72602 TS IM TA-2636, 2637 No.7198-1/4 2SA1179N / 2SC2812N Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product VCE=(--)6V, IC=(--)1mA typ Cob VCB=(--)6V, f=1MHz Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO V(BR)CEO IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0 µA (--)0.1 µA 100 MHz (180) MHz (4.0)3.0 IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA Collector-to-Emitter Breakdown Voltage (--)0.1 400 2SA1179 : VCE=--6V, IC=--10mA VCE(sat) Unit max 200 2SC2812 : VCE=6V, IC=1mA Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage min VCB=(--)35V, IE=0 VEB=(--)4V, IC=0 fT Output Capacitance Ratings Conditions (--0.15)0.1 pF (--)0.5 V (--)1.0 V (--)55 V (--)50 V (--)5 V Marking : 2SA1179N M : 2SC2812N L hFE Rank : 6 IC -- VCE IC -- VCE 20 2SA1179N µA --50 A --45µ A 0 --4 µ A --35µ --30µA --25µA --12 --8 --20µA --15µA --10µA --4 2SC2812N 50µA 45µA Collector Current, IC -- mA Collector Current, IC -- mA --16 --5µA 16 40µA 35µA 30µA 12 25µA 20µA 8 15µA 4 10µA 5µA IB=0 0 0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 0 --50 10 20 30 40 Collector-to-Emitter Voltage, VCE -- V IT04195 IC -- VBE --240 50 IT04196 IC -- VBE 240 2SA1179N VCE= --6V 2SC2812N VCE=6V --200 --160 --120 --80 --40 160 120 Ta=75° C 25°C --25°C Collector Current, IC -- mA 200 Ta=75° C 25°C --25°C Collector Current, IC -- mA IB=0 80 40 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT04197 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT04198 No.7198-2/4 2SA1179N / 2SC2812N hFE -- IC 1000 hFE -- IC 1000 2SA1179N VCE= --6V 7 2SC2812N VCE=6V 7 DC Current Gain, hFE DC Current Gain, hFE 5 Ta=75°C 25°C 3 --25°C 2 5 Ta=75°C 3 --25°C 25°C 2 100 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- mA 3 2 100 7 5 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 5 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 IT04200 f T -- IC 2SC2812N VCE=6V 5 3 2 100 7 5 3 1.0 3 2 3 5 7 2 10 3 5 7 Cob -- VCB 2 2SC2812N f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 IT04202 2SA1179N f=1MHz 10 7 5 3 2 10 7 5 3 2 1.0 1.0 7 5 7 5 7 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 7 --100 IT04203 2 --0.1 7 5 3 3 5 7 --10 2 3 5 2 1.0 3 7 --100 Collector Current, IC -- mA 2 3 5 IT04205 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 7 7 100 IT04204 VCE(sat) -- IC 5 2SA1179N IC / IB= --10 2 --1.0 5 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 100 Collector Current, IC -- mA IT04201 Cob -- VCB 2 3 7 2SA1179N VCE= --6V 3 --1.0 2 Collector Current, IC -- mA f T -- IC 7 Gain-Bandwidth Product, f T -- MHz 100 0.1 5 7--100 2 3 IT04199 2SC2812N IC / IB=10 3 2 0.1 7 5 3 2 0.01 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 IT04206 No.7198-3/4 2SA1179N / 2SC2812N ASO 10 s op 0m DC 7 5 s m 0.1 100µs s 1m IC=0.15A 2 10 Collector Current, IC -- A 10µs ICP=0.3A 3 er ati on 3 2 0.01 7 5 3 2 Ta=25°C Mounted on a glass epoxy board(20✕30✕1.6mm) For PNP, the minus sign is omitted. 0.001 0.1 2 3 PC -- Ta 250 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- mW 7 5 200 150 100 50 0 5 7 100 IT04207 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT04208 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.7198-4/4