ETC 2SC5820

2SC5820
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
ADE-208-1604A (Z)
Rev.1
Nov. 2002
Features
• High gain bandwidth product
fT = 20 GHz typ.
• High power gain and low noise figure;
PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
2
3
1
4
Note:
Marking is “WU–“.
1. Emitter
2. Collector
3. Emitter
4. Base
2SC5820
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
12
V
Collector to emitter voltage
VCEO
4.0
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
35
mA
Collector power dissipation
Pc
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector cutoff current
ICBO


1
µA
VCB = 12 V, IE = 0
Collector cutoff current
ICEO


1
µA
VCE = 4 V, RBE = ∞
Emitter cutoff current
IEBO


10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
70
110
150

VCE = 2 V, IC = 20 mA
Collector output capacitance
Cob

0.3
0.6
pF
VCB = 2 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
17
20

GHz
VCE = 2 V, IC = 30 mA
f = 2 GHz
Power gain
PG
13
17.5

dB
VCE = 2 V, IC = 30 mA,
f = 1.8 GHz
Noise figure
NF

1.15
1.7
dB
VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
3rd. Order Intercept Point
IP3

10

dBm
VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
Rev.1, Nov. 2002, page 2 of 12
2SC5820
Typical Output Characteristics
450 µA
400 µA
Collector Current
150
Collector Power Dissipation
500 µA
50
200
IC (mA)
PC (mW)
Collector Power Dissipation Curve
100
50
0
50
150
100
Ambient Temperature
40
350 µA
300 µA
30
250 µA
200 µA
20
150 µA
100 µA
10
200
IB = 50 µA
0
1
3
2
Collector to Emitter Voltage
Ta (°C)
200
50
VCE = 2 V
VCE = 2 V
hFE
40
DC Current Transfer Ratio
IC (mA)
VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
Collector Current
4
30
20
10
150
100
50
0
0
0.2
0.4
0.6
Base to Emitter Voltage
0.8
VBE (V)
1
1
2
5
10
Collector Current
20
50
100
IC (mA)
Rev.1, Nov. 2002, page 3 of 12
Collector Output Capacitance vs.
Collector to Base Voltage
1.0
2.0
Emitter Input Capacitance Cib (pF)
IE = 0
f = 1 MHz
0.8
0.6
0.4
0.2
0
0
Reverse Transfer Capacitance Cre (pF)
Emitter Input Capacitance vs.
Emitter to Base Voltage
1
2
3
4
IC = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
-1
5
1
0
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1.0
30
IE = 0
f = 1 MHz
Gain Bandwidth Product fT (GHz)
Collector Output Capacitance Cob (pF)
2SC5820
0.8
0.6
0.4
0.2
0
f= 2 GHz
VCE = 2 V
20
10
0
0
1
2
3
4
Collector to Base Voltage VCB (V)
Rev.1, Nov. 2002, page 4 of 12
5
1
2
5
10
Collector Current
20
50
IC (mA)
100
2SC5820
S21 Parameter vs. Collector Current
VCE = 2 V
f = 2 GHz
Output Power POUT (dBm)
|S21|2 (dB)
S21 Parameter
3rd. Order Intercept Point (IP3)
20
20
16
12
8
4
0
1
2
5
10
Collector Current
0
3rd. Harmonic
-40
-60
-60
PG (dB)
4
3
VCE = 1 V
VCE = 3 V
VCE = 2 V
1
0
Power Gain
NF (dB)
Noise Figure
-20
0
20
Power Gain vs. Collector Current
20
f = 1.8 GHz
2
-40
Input Power PIN (dBm)
IC (mA)
Noise Figure vs. Collector Current
5
Fundamental
-20
-80
50 100
20
f = 1.8 GHz
VCE = 2 V
Ic = 5 mA
f = 1.8 GHz
VCE = 3 V
VCE = 2 V
16
12
VCE = 1 V
8
4
0
1
2
5
10
Collector Current
20
50
IC (mA)
100
1
2
5
10
Collector Current
20
50
100
IC (mA)
Rev.1, Nov. 2002, page 5 of 12
2SC5820
S21 Parameter vs. Frequency
Scale: 8 / div.
90°
S11 Parameter vs. Frequency
.8
1
.6
1.5
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
-10
-5
-4
-.2
-.4
-30°
-150°
-3
-2
-.6
-.8
-1
-90°
Condition: VCE = 2 V, ZO = 50 Ω
100 to 3000 MHz (100 MHz Step)
( IC = 30 mA)
Condition: VCE = 2 V, ZO = 50 Ω
100 to 3000 MHz (100 MHz Step)
( IC = 30 mA)
S12 Parameter vs. Frequency
Scale: 0.06 / div.
90°
S22 Parameter vs. Frequency
.8
60°
120°
-60°
-120°
-1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
-10
-5
-4
-.2
-30°
-150°
-3
-.4
-60°
-120°
-90°
Condition: VCE = 2 V, ZO = 50 Ω
100 to 3000 MHz (100 MHz Step)
( IC = 30 mA)
Rev.1, Nov. 2002, page 6 of 12
-2
-.6
-.8
-1
-1.5
Condition: VCE = 2 V, ZO = 50 Ω
100 to 3000 MHz (100 MHz Step)
( IC = 30 mA)
2SC5820
S Parameter
(VCE = 2 V, IC = 5 mA, ZO = 50 Ω)
S11
f (MHz)
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.844
-24.6
15.26
159.9
0.0124
78.9
0.976
-16.4
200
0.835
-23.1
15.07
162.9
0.0153
84.0
0.973
-11.7
300
0.838
-34.2
14.59
154.8
0.0236
80.2
0.953
-17.5
400
0.809
-45.7
13.94
147.1
0.0311
72.5
0.919
-23.6
500
0.781
-56.2
13.16
139.9
0.0387
67.5
0.879
-29.0
600
0.745
-66.8
12.39
133.1
0.0441
61.6
0.828
-33.9
700
0.710
-76.0
11.71
127.7
0.0506
56.2
0.779
-38.6
800
0.688
-85.5
10.89
121.8
0.0537
52.0
0.728
-41.9
900
0.659
-93.5
10.16
117.0
0.0579
47.7
0.682
-45.4
1000
0.639
-101.0
9.47
112.8
0.0610
46.8
0.641
-47.4
1100
0.633
-107.3
8.77
108.6
0.0643
41.1
0.601
-49.8
1200
0.596
-115.4
8.40
105.2
0.0640
40.4
0.560
-51.8
1300
0.578
-121.8
7.92
101.5
0.0665
37.6
0.528
-54.0
1400
0.570
-128.0
7.47
98.3
0.0675
37.4
0.499
-55.4
1500
0.556
-133.1
7.04
95.6
0.0685
32.9
0.473
-57.1
1600
0.548
-138.8
6.68
92.5
0.0691
32.9
0.449
-58.0
1700
0.541
-143.6
6.37
90.1
0.0693
32.5
0.422
-59.0
1800
0.532
-149.0
6.08
87.5
0.0699
30.2
0.400
-60.6
1900
0.529
-153.1
5.77
85.0
0.0716
30.6
0.384
-60.7
2000
0.523
-157.1
5.53
83.2
0.0735
28.8
0.370
-62.1
2100
0.520
-162.0
5.29
80.4
0.0719
30.4
0.349
-62.5
2200
0.521
-164.7
5.03
79.1
0.0733
28.1
0.345
-63.6
2300
0.521
-168.8
4.86
76.4
0.0752
26.6
0.326
-64.0
2400
0.521
-172.0
4.67
74.4
0.0748
26.8
0.312
-64.8
2500
0.520
-175.7
4.53
72.3
0.0752
26.8
0.297
-65.6
2600
0.522
-178.4
4.33
70.6
0.0765
26.2
0.292
-66.7
2700
0.525
178.2
4.21
68.6
0.0771
27.6
0.280
-67.8
2800
0.526
175.6
4.05
67.2
0.0775
27.4
0.275
-68.9
2900
0.529
172.4
3.91
64.8
0.0785
25.5
0.260
-69.5
3000
0.532
169.7
3.82
62.7
0.0772
24.6
0.249
-70.5
Rev.1, Nov. 2002, page 7 of 12
2SC5820
(VCE = 2 V, IC = 10 mA, ZO = 50 Ω)
S11
f (MHz)
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.717
-17.3
25.92
167.8
0.0073
84.9
0.967
-8.4
200
0.712
-34.2
24.87
156.2
0.0137
81.4
0.941
-17.1
300
0.699
-50.1
23.25
145.5
0.0205
73.7
0.896
-25.1
400
0.667
-65.5
21.32
136.0
0.0266
66.0
0.833
-32.8
500
0.635
-78.9
19.27
127.6
0.0319
62.0
0.766
-39.1
600
0.600
-91.5
17.37
120.5
0.0349
56.4
0.694
-44.3
700
0.572
-102.0
15.73
115.1
0.0403
52.7
0.632
-48.6
800
0.553
-112.1
14.26
109.6
0.0402
51.2
0.574
-51.7
900
0.533
-120.1
12.97
105.3
0.0445
46.0
0.525
-54.8
1000
0.522
-127.4
11.90
101.6
0.0472
47.2
0.484
-56.2
1100
0.515
-133.7
10.90
98.1
0.0476
43.4
0.446
-58.4
1200
0.499
-140.9
10.16
95.3
0.0477
44.4
0.410
-59.4
1300
0.492
-146.8
9.46
92.2
0.0505
43.3
0.381
-61.0
1400
0.490
-152.1
8.84
89.6
0.0509
43.8
0.357
-61.9
1500
0.484
-156.6
8.27
87.4
0.0520
39.7
0.335
-62.9
1600
0.484
-161.3
7.79
84.8
0.0533
41.0
0.316
-63.4
1700
0.482
-165.3
7.38
82.8
0.0540
41.4
0.295
-64.0
1800
0.481
-169.8
6.99
80.7
0.0548
40.0
0.277
-65.0
1900
0.481
-173.1
6.63
78.7
0.0578
41.6
0.265
-65.1
2000
0.481
-176.4
6.33
76.9
0.0601
39.9
0.252
-66.1
2100
0.483
179.9
6.02
74.8
0.0603
42.3
0.238
-66.1
2200
0.484
177.3
5.75
73.4
0.0610
39.9
0.232
-66.9
2300
0.488
174.4
5.52
71.4
0.0641
39.3
0.219
-67.2
2400
0.489
171.8
5.29
69.6
0.0646
39.5
0.209
-67.7
2500
0.491
169.0
5.10
67.8
0.0664
40.2
0.197
-68.0
2600
0.495
166.5
4.89
66.2
0.0678
39.7
0.194
-69.7
2700
0.501
164.3
4.73
64.6
0.0693
40.4
0.185
-71.0
2800
0.503
161.9
4.55
63.2
0.0705
40.2
0.181
-71.9
2900
0.508
159.6
4.39
61.4
0.0715
39.5
0.170
-72.9
3000
0.510
157.3
4.27
59.6
0.0717
37.3
0.162
-74.0
Rev.1, Nov. 2002, page 8 of 12
2SC5820
(VCE = 2 V, IC = 20 mA, ZO = 50 Ω)
S11
f (MHz)
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.556
-26.3
38.68
163.4
0.0065
88.2
0.937
-11.6
200
0.550
-50.8
35.60
148.3
0.0117
78.3
0.882
-23.2
300
0.537
-72.0
31.52
135.5
0.0174
71.3
0.805
-32.9
400
0.519
-90.7
27.37
125.0
0.0215
63.3
0.716
-41.4
500
0.501
-105.4
23.66
116.7
0.0252
62.0
0.633
-47.6
600
0.485
-118.3
20.55
110.2
0.0276
57.0
0.556
-52.3
700
0.475
-128.1
18.10
105.3
0.0310
54.2
0.495
-55.9
800
0.470
-137.3
16.09
100.7
0.0312
54.1
0.441
-58.4
900
0.462
-144.3
14.43
97.1
0.0352
51.7
0.397
-60.8
1000
0.460
-150.4
13.12
94.1
0.0369
53.1
0.362
-61.7
1100
0.460
-155.8
11.95
91.2
0.0389
50.4
0.330
-63.6
1200
0.458
-161.4
11.00
88.9
0.0397
52.5
0.302
-63.5
1300
0.457
-166.3
10.20
86.4
0.0425
51.5
0.280
-64.7
1400
0.460
-170.1
9.48
84.2
0.0441
53.3
0.260
-65.2
1500
0.457
-173.9
8.85
82.2
0.0452
49.4
0.242
-66.3
1600
0.462
-177.4
8.31
80.0
0.0469
50.7
0.227
-65.9
1700
0.462
179.3
7.84
78.4
0.0478
52.0
0.210
-66.4
1800
0.466
175.9
7.41
76.6
0.0496
49.7
0.198
-66.8
1900
0.467
173.3
7.02
74.8
0.0532
51.5
0.187
-67.2
2000
0.469
170.6
6.70
73.2
0.0548
50.1
0.178
-67.2
2100
0.474
167.8
6.36
71.4
0.0572
52.8
0.167
-67.3
2200
0.476
165.5
6.09
70.0
0.0574
50.9
0.161
-68.3
2300
0.480
163.3
5.82
68.3
0.0610
48.6
0.152
-68.2
2400
0.483
161.2
5.58
66.7
0.0616
49.0
0.143
-69.2
2500
0.486
159.0
5.37
65.0
0.0638
49.8
0.135
-69.8
2600
0.490
156.9
5.15
63.4
0.0661
48.6
0.131
-70.8
2700
0.497
155.3
4.97
62.1
0.0699
48.9
0.123
-72.9
2800
0.499
153.1
4.78
60.8
0.0715
49.3
0.122
-74.1
2900
0.505
151.4
4.61
59.2
0.0714
48.0
0.114
-75.4
3000
0.506
149.6
4.48
57.6
0.0713
46.7
0.106
-77.2
Rev.1, Nov. 2002, page 9 of 12
2SC5820
(VCE = 2 V, IC = 30 mA, ZO = 50 Ω)
S11
f (MHz)
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.441
-34.8
45.76
160.6
0.0061
84.2
0.913
-13.6
200
0.449
-65.1
40.75
143.5
0.0110
78.8
0.838
-26.7
300
0.455
-88.7
34.81
129.9
0.0153
69.4
0.741
-37.1
400
0.455
-107.9
29.32
119.4
0.0185
63.3
0.641
-45.5
500
0.451
-122.1
24.83
111.5
0.0223
61.5
0.558
-51.2
600
0.450
-133.9
21.25
105.6
0.0238
58.6
0.485
-55.6
700
0.449
-142.5
18.53
101.1
0.0280
55.9
0.428
-58.5
800
0.451
-150.6
16.36
97.0
0.0284
57.8
0.378
-60.4
900
0.449
-156.4
14.62
93.7
0.0321
55.5
0.340
-62.8
1000
0.449
-161.7
13.25
91.1
0.0347
57.7
0.308
-63.1
1100
0.453
-166.3
12.05
88.4
0.0360
55.5
0.279
-64.9
1200
0.455
-171.0
11.05
86.3
0.0364
58.0
0.256
-64.1
1300
0.457
-175.0
10.23
84.0
0.0399
56.7
0.236
-65.2
1400
0.460
-178.3
9.50
82.0
0.0413
58.5
0.220
-65.5
1500
0.460
178.5
8.86
80.2
0.0438
54.8
0.204
-66.2
1600
0.466
175.5
8.32
78.1
0.0437
55.1
0.190
-65.9
1700
0.466
172.7
7.84
76.5
0.0465
56.5
0.176
-65.8
1800
0.471
169.8
7.41
74.8
0.0481
55.4
0.165
-66.4
1900
0.472
167.4
7.02
73.2
0.0517
56.0
0.157
-66.9
2000
0.476
165.0
6.69
71.6
0.0540
54.4
0.149
-66.8
2100
0.480
162.7
6.35
69.9
0.0560
56.9
0.139
-67.3
2200
0.483
160.5
6.08
68.5
0.0573
55.2
0.134
-67.8
2300
0.487
158.7
5.81
66.9
0.0604
52.3
0.126
-67.7
2400
0.489
156.8
5.56
65.4
0.0617
53.6
0.117
-68.2
2500
0.493
154.9
5.35
63.8
0.0633
53.4
0.110
-68.8
2600
0.497
153.0
5.14
62.2
0.0659
51.6
0.107
-70.8
2700
0.504
151.6
4.96
60.9
0.0690
52.2
0.101
-72.8
2800
0.507
149.5
4.77
59.6
0.0711
52.9
0.099
-73.4
2900
0.511
148.0
4.59
58.1
0.0714
50.9
0.091
-76.1
3000
0.515
146.3
4.47
56.5
0.0717
49.4
0.085
-78.0
Rev.1, Nov. 2002, page 10 of 12
2SC5820
Package Dimensions
As of July, 2002
Unit: mm
0.1
0.3 +– 0.05
0.2
0.65 0.6
1.25 ± 0.2
0.9 ± 0.1
0.1
0.4 +– 0.05
0 – 0.1
0.425
0.1
0.3 +– 0.05
+ 0.1
0.16– 0.06
2.1 ± 0.3
0.65 0.65
1.25 ± 0.1
0.1
0.3 +– 0.05
0.425
2.0 ± 0.2
1.3 ± 0.2
Hitachi Code
JEDEC
JEITA
Mass (reference value)
CMPAK-4(T)
—
Conforms
0.006 g
Rev.1, Nov. 2002, page 11 of 12
2SC5820
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.1, Nov. 2002, page 12 of 12