BCW69 and BCW70 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.035 (0.9) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 0.031 (0.8) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .045 (1.15) .037 (0.95) 1 Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features Mechanical Data • • • • Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: BCW69 = H1 BCW70 = H2 Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box PNP Silicon Epitaxial Planar Transistors Suited for low level, general purpose applications. Low current, low voltage. As complementary types, BCW71 and BCW72 NPN transistors are recommended. Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Base Voltage –VCBO 50 V Collector-Emitter Voltage –VCEO 45 V Emitter-Base Voltage –VEBO 5.0 V –IC 100 mA Peak Collector Current –ICM 200 mA Peak Base Current –IBM 200 mA Power Dissipation Ptot 250 mW Collector Current Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range RΘJA (1) 500 °C/W Tj 150 °C TSTG –65 to +150 °C Note: (1) Mounted on FR-4 printed-circuit board. Document Number 88174 09-May-02 www.vishay.com 1 BCW69 and BCW70 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol J DC Current Gain BCW69 BCW70 BCW69 BCW70 hFE Test Condition Min Typ Max Unit –VCE = 5 V, –IC = 10 µA — — 120 215 90 150 — — — — 260 500 — –VCE = 5 V, –IC = 2 mA Collector-Emitter Saturation Voltage –VCEsat – IC = 10 mA, –IB = 0.5 mA –IC = 50 mA, –IB = 2.5 mA — — 80 150 300 — mV Base-Emitter Saturation Voltage –VBEsat – IC = 10 mA, –IB = 0.5 mA –IC = 50 mA, –IB = 2.5 mA — — 720 810 — — mV 600 — 750 mV –VCB = 20 V, VEB = 0 — — 100 nA –VCB = 20 V, VEB = 0, TA = 100°C — — 10 µA fT –VCE = 5 V, –IC = 10 mA f = 100 MHz 100 — — MHz CCBO –VCB = 10 V, f = 1 MHz, IE = 0 — 4.5 — pF F –VCE = 5 V, –IC = 200 µA, RS = 2 kΩ, f = 100 kHz, B = 200 Hz — 2 6 dB Base-Emitter Voltage Collector Cut-off Current Gain-Bandwidth Product Collector-Base Capacitance Noise Figure www.vishay.com 2 –VBE –ICBO –VCE = 5 V, –IC = 2 mA Document Number 88174 09-May-02