BC817, BC818 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) Mounting Pad Layout TO-236AB (SOT-23) .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 .102 (2.6) .094 (2.4) .016 (0.4) 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) 1 0.079 (2.0) Dimensions in inches and (millimeters) Type Marking BC817-16 -25 -40 6A 6B 6C BC818-16 -25 -40 6E 6F 6G Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box • NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups -16, -25, and -40 according to their current gain. • As complementary types, the PNP transistors BC807 and BC808 are recommended. Maximum Ratings and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage (base shorted) BC817 BC818 VCES 50 30 V Collector-Emitter Voltage (base open) BC817 BC818 VCEO 45 25 V VEBO 5 V IC 800 mA Peak Collector Current ICM 1000 mA Peak Base Current IBM 200 mA –IEM 1000 mA Emitter-Base Voltage Collector Current Peak Emitter Current Power Dissipation at TSB = 50 ˚C Ptot 310 (1) mW (1) °C/W Thermal Resistance Junction to Ambiant Air RθJA 450 Thermal Resistance Junction to Substrate Backside RθSB 320 (1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Device on fiberglass substrate, see layout on third page. Document Number 88163 09-May-02 www.vishay.com 1 BC817, BC818 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit hFE VCE = 1V, IC = 100mA 100 160 250 — — — 250 400 600 — — — hFE VCE = 1V, IC = 500mA 40 — — — Collector Saturation Voltage VCEsat IC = 500mA, IB = 50mA — — 0.7 V Base Saturation Voltage VBEsat IC = 500mA, IB = 50mA — — 1.3 V — — 1.2 V DC Current Gain Current Gain Group-16 -25 -40 Base-Emitter VoltageVBEon VCE = 1V, IC = 500mA Collector-Base Cutoff Current ICBO VCB = 20V VCB = 20V, TJ = 150°C — — — — 100 5 nA µA Emitter-Base Cutoff Current IEBO VEB = 4V — — 100 nA fT VCE = 5V, IC = 10mA f = 50MHz — 100 — MHz CCBO VCB = 10V, f = 1MHz — 12 — pF Gain-Bandwidth Product Collector-Base Capacitance Note: (1) Device on fiberglass substrate, see layout below. 0.30 (7.5) Layout for RθJA test 0.12 (3) Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.03 (0.8) 0.47 (12) Dimensions in inches (millimeters) 0.2 (5) 0.06 (1.5) 0.20 (5.1) www.vishay.com 2 Document Number 88163 09-May-02 BC817, BC818 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88163 09-May-02 www.vishay.com 3 BC817, BC818 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88163 09-May-02 BC817, BC818 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88163 09-May-02 www.vishay.com 5