ETC BUK762R7-30B

BUK75/762R7-30B
TrenchMOS™ standard level FET
Rev. 02 — 2 October 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
Product availability:
BUK752R7-30B in SOT78 (TO-220AB)
BUK762R7-30B in SOT404 (D2-PAK).
1.2 Features
■ Very low on-state resistance.
■ 175 °C rated
■ Q101 compliant
■ Standard level compatible.
1.3 Applications
■ Automotive systems
■ Motors, lamps and solenoids
■ 12 V loads
■ General purpose power switching.
1.4 Quick reference data
■ EDS(AL)S ≤ 2.3 J
■ ID ≤ 75 A
■ RDSon = 2.3 mΩ (typ)
■ Ptot ≤ 300 W.
2. Pinning information
Table 1:
Pinning - SOT78 and SOT404 simplified outlines and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base,
connected to
drain (d)
Simplified outline
Symbol
mb
mb
[1]
d
g
2
1
3
MBK116
MBK106
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
MBB076
s
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
RGS = 20 kΩ
Min
Max
Unit
-
30
V
-
30
V
-
±20
V
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
[1]
-
241
A
[2]
-
75
A
Tmb = 100 °C; VGS = 10 V; Figure 2
[2]
-
75
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
967
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
300
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
[1]
-
241
A
[2]
-
75
A
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
967
A
unclamped inductive load; ID = 75 A;
VDS ≤ 30 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
-
2.3
J
Source-drain diode
IDR
IDRM
reverse drain current (DC)
peak reverse drain current
Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
Rev. 02 — 2 October 2002
2 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
03na19
120
03ng51
250
ID
(A)
Pder
200
(%)
80
150
100
40
Capped at 75 A due to package
50
0
0
0
50
100
150
200
Tmb (°C)
25
50
75
100
125
150
175
200
Tmb (ºC)
VGS ≥ 10 V
P tot
P der = ----------------------- × 100%
P
°
tot ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
03ng27
104
ID
(A)
103
Limit RDSon = VDS/ID
tp = 10 µs
100 µs
102
1 ms
Capped at 75 A due to package
10 ms
DC
100 ms
10
1
10-1
1
10
VDS (V)
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
Rev. 02 — 2 October 2002
3 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3:
Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Figure 4
-
-
0.5
K/W
SOT78 (TO-220AB)
vertical in still air
-
-
60
K/W
SOT404 (D2-PAK)
minimum footprint; mounted on a PCB
-
-
50
K/W
Rth(j-mb)
thermal resistance from junction to
mounting base
Rth(j-a)
thermal resistance from junction to ambient
4.1 Transient thermal impedance
03ng28
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
0.02
10-2
δ=
P
tp
T
Single Shot
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
Rev. 02 — 2 October 2002
4 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
30
-
-
V
Tj = −55 °C
27
-
-
V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
4.4
V
Tj = 25 °C
-
0.02
1
µA
Tj = 175 °C
-
-
500
µA
-
2
100
nA
Tj = 25 °C
-
2.3
2.7
mΩ
Tj = 175 °C
-
-
5.1
mΩ
-
91
-
nC
-
19
-
nC
-
29
-
nC
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
-
4659
6212
pF
-
1691
2029
pF
-
622
852
pF
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
-
31
-
ns
-
107
-
ns
-
113
-
ns
VDS = 30 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-to-source charge
Qgd
gate-to-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Ld
internal drain inductance
Ls
internal source inductance
VGS = 10 V; VDD = 24 V;
ID = 25 A; Figure 14
-
118
-
ns
from drain lead 6 mm from
package to centre of die
-
4.5
-
nH
from contact screw on
mounting base to centre of
die SOT78
-
3.5
-
nH
from upper edge of drain
mounting base to centre of
die SOT404
-
2.5
-
nH
from source lead to source
bond pad
-
7.5
-
nH
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
Rev. 02 — 2 October 2002
5 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
Table 4: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
0.85
1.2
V
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 40 A; VGS = 0 V;
Figure 15
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 20 V
88
-
ns
132
-
nC
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
-
Rev. 02 — 2 October 2002
6 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
03nh14
350
10
ID
(A)
300
6.5
6
20
03nh13
5
RDSon
(mΩ)
7
5.5
4
250
200
VGS = 5 V
3
150
4.5
100
2
50
4
1
0
0
2
4
6
8
Tj = 25 °C; tp = 300 µs
15
20
VGS (V)
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03aa27
2
03nh15
a
VGS = 5 V
8
10
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
10
RDSon
(mΩ)
5
10
VDS (V)
1.5
5.5
6
6
1
7
4
6.5
8
10
0.5
2
0
0
0
100
200
300
ID (A)
400
Tj = 25 °C
-60
60
120
Tj (°C)
180
R DSon
a = ---------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
0
Rev. 02 — 2 October 2002
7 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
03aa32
5
03aa35
10-1
ID
(A)
VGS(th)
(V)
4
max
10-2
3
typ
10-3
2
min
10-4
1
10-5
0
10-6
-60
0
60
120
Tj (°C)
180
min
0
2
typ
max
4
6
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nh11
100
03nh16
10000
gfs
(S)
C
(pF)
80
8000
60
6000
Ciss
40
4000
20
2000
0
0
Coss
Crss
0
20
40
60
10-1
1
ID (A)
Tj = 25 °C; VDS = 25 V
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
10
Rev. 02 — 2 October 2002
8 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
03nh12
100
03nh10
10
ID
(A)
VGS
(V)
80
8
60
6
40
4
VDD = 14 V
20
VDD = 24 V
2
Tj = 175 ºC
Tj = 25 ºC
0
0
0
2
4
VGS (V)
6
0
20
40
60
80
100
QG (nC)
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03nh09
100
IS
(A)
80
60
40
20
Tj = 175 ºC
Tj = 25 ºC
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
Rev. 02 — 2 October 2002
9 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
p
q
mounting
base
D1
D
L2
L1(1)
Q
b1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1(1)
L2
max.
p
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
REFERENCES
IEC
SOT78
JEDEC
EIAJ
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
00-09-07
01-02-16
Fig 16. SOT78 (TO-220AB).
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
Rev. 02 — 2 October 2002
10 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-02-12
SOT404
Fig 17. SOT404 (D2-PAK)
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9397 750 10272
Product data
Rev. 02 — 2 October 2002
11 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
7. Soldering
10.85
10.60
10.50
handbook, full pagewidth
1.50
7.50
7.40
1.70
2.25 2.15
8.15
8.275
8.35
1.50
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
5.08
MSD057
occupied area
solder paste
Dimensions in mm.
Fig 18. Reflow soldering footprint for SOT404.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
Rev. 02 — 2 October 2002
12 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
8. Revision history
Table 5:
Revision history
Rev Date
02
20021002
CPCN
Description
-
Product data; second version; supersedes Rev 01 of 20020328.
•
Description in Section 1 changed from:
N-channel enhancement mode field-effect power transistor in a plastic package using
generation three TrenchMOS™ technology, featuring very low on-state resistance.
to:
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
01
20020328
-
Product data; initial version.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Product data
Rev. 02 — 2 October 2002
13 of 15
BUK75/762R7-30B
Philips Semiconductors
TrenchMOS™ standard level FET
9. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10272
Rev. 02 — 2 October 2002
14 of 15
Philips Semiconductors
BUK75/762R7-30B
TrenchMOS™ standard level FET
Contents
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 2 October 2002
Document order number: 9397 750 10272