ISL6740, ISL6741 ® Data Sheet August 2003 Flexible Double Ended Voltage and Current Mode PWM Controllers FN9111.1 Features • Precision Duty Cycle and Deadtime Control The ISL6740, ISL6741 family of adjustable frequency, low power, pulse width modulating (PWM) voltage mode (ISL6740) and current mode (ISL6741) controllers is designed for a wide range of power conversion applications using half-bridge, full bridge, and push-pull configurations. These controllers provide an extremely flexible oscillator that allows precise control of frequency, duty cycle, and deadtime. • 95µA Startup Current • Adjustable Delayed Over Current Shutdown and Re-Start (ISL6740) • Adjustable Short Circuit Shutdown and Re-Start • Adjustable Oscillator Frequency Up to 2MHz • Bi-Directional Synchronization This advanced BiCMOS design features low operating current, adjustable switching frequency up to 1MHz, adjustable soft start, internal and external over temperature protection, fault annunciation, and a bi-directional SYNC signal that allows the oscillator to be locked to paralleled units or to an external clock for noise sensitive applications. • Inhibit Signal Ordering Information • Adjustable input Under Voltage Lockout PART NUMBER TEMP. RANGE (oC) PKG. DWG. # PACKAGE • Internal Over Temperature Protection • System Over Temperature Protection Using a Thermistor or Sensor • Adjustable Soft Start • Fault Signal ISL6740IB -40 to 105 16 Ld SOIC M16.15 • Tight Tolerance Voltage Reference Over Line, Load, and Temperature ISL6740IV -40 to 105 16 Ld TSSOP M16.173 Applications ISL6741IB -40 to 105 16 Ld SOIC M16.15 • Telecom and Datacom Power ISL6741IV -40 to 105 16 Ld TSSOP M16.173 Add -T suffix to part number for tape and reel packaging x= CONTROL MODE 0 Voltage Mode 1 Current Mode • Wireless Base Station Power • File Server Power • Industrial Power Systems • DC Transformers and Buss Regulators Pinout ISL6740, ISL6741 (SOIC, TSSOP) TOP VIEW OUTA 1 GND 2 15 VREF SCSET 3 14 VDD CT 4 13 RTD SYNC 5 12 RTC CS 6 11 OTS VERROR 7 UV 8 1 16 OUTB 10 FAULT 9 SS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2003. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. Functional Block Diagram ISL6740 V REF V DD SYNC FL V REF 5.00 V 1% 100 OUTA Q ENABLE + - T 2 Q BG +- OUTB PWM TOGGLE 4.5 k GND SC S/D Internal OT Shutdown 130 - 150 C Bi-Directional Synchronization UV + - SS LOW INHIBIT V REF S Q R Q 70µA SYNC IN INHIBIT/V IN UV 1.00 V OC S/D N_SYNC OUT ON SC LATCH EXT. SYNC SS R TC S Q R Q + 300 k 4.5 V IRTD R TD 15µA OC LATCH - Oscillator SS CLAMP CLK SCSET Short Circuit Detection SS HI CT + - Q SS DONE 4.25 V Q 50 µS RETRIGGERABLE ONE SHOT SS LOW INHIBIT CS 0.6 V 0.4 + - + - PWM COMPARATOR S Q R Q PWM LATCH RESET DOMINANT 0.27 V + - FAULT LATCH SET DOMINANT OC DETECT S Q R Q FAULT V REF SS 0.4 V REF UV 4.65 V 0.5 V REF/2 + FL SC S/D OC S/D V ERROR OTS ISL6740, ISL6741 SS DONE IRTC + BG +- Functional Block Diagram (Continued) ISL6741 V DD V REF SYNC FL V REF 5.00 V 1% + - 100 OUTA Q ENABLE T Q 3 BG +- OUTB PWM TOGGLE 4.5 k GND SC S/D Internal OT Shutdown 130 - 150 C V REF N_SYNC OUT Bi-Directional Synchronization 70µA SC LATCH SYNC IN S Q R Q ON INHIBIT/V IN UV 1.00 V UV + - INHIBIT EXT. SYNC SS + 300 k 4.5 V IRTD R TD 15µA SS DONE - Oscillator ISL6740, ISL6741 IRTC R TC SS CLAMP CLK SCSET Short Circuit Detection CT SS DONE SS LOW INHIBIT CS 0.6 V + - R 80 m V + - + - PWM COMPARATOR Q Q S Q R Q FL PWM LATCH RESET DOMINANT FAULT SC S/D V REF V ERROR SS 0.25 V REF UV 4.65 V 0.2 V REF/2 OTS FAULT LATCH SET DOMINANT OC DETECT S 0.27 V + - + + BG +- Typical Application (ISL6740) - 48V Input DC Transformer, 12V @ 8A Output SP1 VIN+ +12V QR1 L1 C11 QH QR3 T1 L3 C2 R8 C9 C13 R10 TP1 C8 RTN L2 4 C1 T2 R9 QR2 QL R2 C14 CR3 QR4 R11 C12 TP2 CR1 C7 U1 HIP2101 V DD C4 HB LO VSS HO HS LI HI R5 TP4 R6 R14 VREF C10 RT1 C5 C18 OTS SYNC VERROR GND VIN- OUTA R17 V DD R7 ISL6740 OUTB CS CT RTC VREF UV RTD R3 TP6 R19 SCSET FAULT U3 SS TP5 R13 Q5 C15 C17 D1 R18 C6 R12 C16 R15 ISL6740, ISL6741 CR2 C3 R1 ISL6740, ISL6741 Absolute Maximum Ratings Thermal Information Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . GND - 0.3V to +20.0V OUTA, OUTB, Signal Pins . . . . . . . . . . . . . . . . .GND - 0.3V to VREF VREF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 6.0V Peak GATE Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A ESD Classification Human Body Model (Per MIL-STD-883 Method 3015.7) . . .1500V Charged Device Model (Per EOS/ESD DS5.3, 4/14/93) . . .1000V Thermal Resistance Junction to Ambient (Typical) θJA (oC/W) 16 Lead SOIC (Note 1) . . . . . . . . . . . . . . . . . . . . . . 77 16 Lead TSSOP (Note 1) . . . . . . . . . . . . . . . . . . . . . 102 Maximum Junction Temperature . . . . . . . . . . . . . . . -55oC to 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC (SOIC, TSSOP- Lead Tips Only) Operating Conditions Temperature Range ISL6740Ix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 105oC ISL6741Ix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 105oC Supply Voltage Range (Typical) . . . . . . . . . . . . . . . . 9VDC-16 VDC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 2. All voltages are with respect to GND. Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application schematic. 9V < VDD < 20 V, RTD = 51.1kΩ, RTC=10kΩ, CT = 470pF, TA = -40oC to 105oC (Note 4), Typical values are at TA = 25oC PARAMETER TEST CONDITIONS MIN TYP MAX UNITS SUPPLY VOLTAGE Start-Up Current, IDD VDD< START Threshold - 95 140 µA Operating Current, IDD RLOAD, COUTA,B = 0 - 5.0 8.0 mA COUTA,B = 1nF - 7.0 12.0 mA UVLO START Threshold 6.50 7.25 8.00 V UVLO STOP Threshold 6.00 6.75 7.50 V Hysteresis 0.75 1.00 1.25 V 4.900 5.000 5.050 V - 3 - mV Fault Voltage 4.10 4.55 4.75 V VREF Good Voltage 4.25 4.75 4.95 V Hysteresis 75 165 250 mV Operational Current (source) -20 - - mA 5 - - mA -25 - -100 mA 0.55 0.6 0.65 V CS to OUT Delay - 35 50 ns CS Sink Current - 10 - mA Input Bias Current -1.00 - 1.00 µA CS to PWM Comparator Input Offset (ISL6741) TBD 80 TBD mV TBD 4 TBD V/V 1 - - MΩ REFERENCE VOLTAGE Overall Accuracy IVREF = 0, -20mA (Note 4) Long Term Stability TA = 125oC, 1000 hours (Note 4) Operational Current (sink) Current Limit CURRENT SENSE Current Limit Threshold VERROR = VREF Gain (ISL6741) ACS=∆VERROR/∆VCS SCSET Input Impedance 5 ISL6740, ISL6741 Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application schematic. 9V < VDD < 20 V, RTD = 51.1kΩ, RTC=10kΩ, CT = 470pF, TA = -40oC to 105oC (Note 4), Typical values are at TA = 25oC (Continued) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS - 10 - % 400 - - kΩ VERROR < CS Offset (ISL6741) - - 0 % VERROR < CT Offset (ISL6740) - - 0 % VERROR > 4.75V (Note 6) - 83 - % VERROR to PWM Comparator Input Offset (ISL6741) 0.4 1.0 1.25 V VERROR to PWM Comparator Input Gain (ISL6740) - 0.4 - V/V CT to PWM Comparator Input Gain (ISL6740) - 0.4 - V/V SS to PWM Comparator Input Gain (ISL6740) - 0.5 - V/V (ISL6741) - 0.2 - V/V 333 351 369 kHz SC Setpoint Accuracy PULSE WIDTH MODULATOR VERROR Input Impedance Minimum Duty Cycle Maximum Duty Cycle OSCILLATOR Frequency Accuracy TA = 25oC Frequency Variation with VDD T= 105oC (F20V- - F9V)/F9V - 2 3 % T= -40oC (F20V- - F9V)/F9V - 2 3 % (Note 4) - 8 - % 1.88 2.0 2.12 µA/µA 45 55 65 µA/µA CT Valley Voltage 0.75 0.80 0.85 V CT Peak Voltage 2.70 2.80 2.90 V Input High Threshold (VIH), Minimum 4.0 - - V Input Low Threshold (VIL), Maximum - - 0.8 V 4.5 - kΩ 0.6x Free Running - Free Running Hz Temperature Stability Charge Current Gain Discharge Current Gain SYNCHRONIZATION Input Impedance Input Frequency Range (Note 4) High Level Output Voltage (VOH) ILOAD = -1mA - 4.5 - V Low Level Output Voltage (VOL) ILOAD = 10µA - - 100 mV SYNC Output Current VOH > 2.0V (Note 4) -10 - - mA SYNC Output Pulse Duration (minimum) (Note 4, 5) 250 - 400 ns SYNC Advance SYNC rising edge to GATE falling edge, CGATE = CSYNC = 100pF (Note 4) - 5 - ns -45 -55 -75 µA SS Clamp Voltage 4.35 4.5 4.65 V Sustained Over Current Threshold Voltage (ISL6740) Charged Threshold minus: 0.20 0.25 0.30 V SOFTSTART Charging Current SS = 2V Over Current/Short Circuit Discharge Current SS = 2V 13 18 23 µA Fault SS Discharge Current SS = 2V - 10.0 - mA 6 ISL6740, ISL6741 Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application schematic. 9V < VDD < 20 V, RTD = 51.1kΩ, RTC=10kΩ, CT = 470pF, TA = -40oC to 105oC (Note 4), Typical values are at TA = 25oC (Continued) PARAMETER TEST CONDITIONS Reset Threshold Voltage MIN TYP MAX UNITS 0.25 0.27 0.33 V FAULT Fault High Level Output Voltage (VOH) ILOAD = -10mA 2.85 3.5 - V Fault Low Level Output Voltage (VOL) ILOAD = 10mA - 0.4 0.9 V Fault Rise Time CLOAD = 100pF (Note 4) - 15 - ns Fault Fall Time CLOAD = 100pF (Note 4) - 15 - ns High Level Output Voltage (VOH) VREF - OUTA or OUTB, IOUT = -50mA - 0.5 1.0 V Low Level Output Voltage (VOL) OUTA or OUTB - GND, IOUT = 50mA - 0.5 1.0 V Rise Time CGATE = 1nF, VDD = 15V (Note 4) - 50 100 ns Fall Time CGATE = 1nF, VDD = 15V (Note 4) - 40 80 ns OUTPUT THERMAL PROTECTION Thermal Shutdown (Note 4) 135 145 155 oC Thermal Shutdown Clear (Note 4) 120 130 140 oC Hysteresis, Internal Protection (Note 4) - 15 - oC Reference, External Protection 2.375 2.50 2.625 V Hysteresis, External Protection 18 25 30 µA 0.97 1.00 1.03 V 7 10 15 µA 4.8 - - V 1 - - MΩ SUPPLY UVLO/INHIBIT Input Voltage Low/Inhibit Threshold Hysteresis, Switched Current Amplitude Input High Clamp Voltage Input Impedance :N E O T NOTE: 3. Specifications at -40oC and 105o C are guaranteed by design, not production tested. 4. Guaranteed by design, not 100% tested in production. 5. SYNC pulse width is the greater of this value or the CT discharge time. 6. This is the maximum duty cycle achievable using the specified values of RTC, RTD, and CT. Larger or smaller maximum duty cycles may be obtained using other values for these components. See Equations 2-4. 7 ISL6740, ISL6741 Typical Performance Curves CT DISCHARGE CURRENT GAIN NORMALIZED VREF 1.001 1 0.999 0.998 0.997 -40 -25 -10 5 20 35 50 65 80 65 60 55 50 45 40 0 95 110 50 100 150 200 250 300 350 400 450 500 RTD CURRENT (µA) TEMPERATURE°(C) FIGURE 1. REFERENCE VOLTAGE vs TEMPERATURE FIGURE 2. OSCILLATOR CT DISCHARGE CURRENT GAIN 1 - 106 FREQUENCY (Hz) DEADTIME - TD (ns) 1 - 104 1 - 103 100 1 - 105 10 10 10 20 30 40 50 60 RTD (kΩ) 70 80 90 100 Pin Descriptions VDD - VDD is the power connection for the IC. To optimize noise immunity, bypass VDD to GND with a ceramic capacitor as close to the VDD and GND pins as possible. The total supply current, IDD, will be dependent on the load applied to outputs OUTA and OUTB. Total IDD current is the sum of the quiescent current and the average output current. Knowing the operating frequency, Fsw, and the output loading capacitance charge, Q, per output, the average output current can be calculated from: A (EQ. 1) SYNC - A bi-directional synchronization signal used to coordinate the switching frequency of multiple units. Synchronization may be achieved by connecting the SYNC signal of each unit together or by using an external master clock signal. The oscillator timing capacitor, CT, is always required regardless of the synchronization method used. The paralleled unit with the highest oscillator frequency assumes control. 8 20 30 40 50 60 70 RTC (kΩ) 80 90 100 FIGURE 4. CAPACITANCE vs FREQUENCY FIGURE 3. DEADTIME (TD) vs CAPACITANCE I OUT = 2 • Q • F SW 1 - 105 RTC - This is the oscillator timing capacitor charge current control pin. A resistor is connected between this pin and GND. The current flowing through the resistor determines the magnitude of the charge current. The charge current is nominally twice this current. The PWM maximum ON time is determined by the timing capacitor charge duration. RTD - This is the oscillator timing capacitor discharge current control pin. A resistor is connected between this pin and GND. The current flowing through the resistor determines the magnitude of the discharge current. The discharge current is nominally 50x this current. The PWM deadtime is determined by the timing capacitor discharge duration. CT - The oscillator timing capacitor is connected between this pin and GND. VERROR - The inverting input of the PWM comparator. The error voltage is applied to this pin to control the duty cycle. Increasing the signal level increases the duty cycle. The node may be driven with an external error amplifier or optocoupler. ISL6740, ISL6741 The ISL6740, ISL6741 features a built-in soft start. Soft start is implemented as a clamp on the error voltage input. OTS - The non-inverting input to the over temperature shutdown comparator. The signal input at this pin is compared to an internal threshold of VREF/2. If the voltage at this pin exceeds the threshold, the Fault signal is asserted and the outputs are disabled until the condition clears. There is a nominal 25µA switched current source used for hysteresis. The amount of hysteresis is adjustable by varying the source impedance of the signal into this pin. FAULT - The Fault signal is asserted high whenever the outputs, OUTA and OUTB, are disabled. This occurs during an over temperature fault, an input UV fault, a VREF UV fault, or during an over current (ISL6740) or short circuit shutdown fault. UV - Undervoltage monitor input pin. A resistor divider between the input source voltage and GND sets the under voltage lock out threshold. The signal is compared to an internal 1.00V reference to detect an under voltage or inhibit condition. CS - This is the input to the current sense comparator(s). The IC has the PWM comparator for peak current mode control (ISL6741) and an over current protection comparator. The over current comparator threshold is set at 0.600V nominal. A short circuit condition occurs when the threshold set by the SCSET pin is exceeded. The CS pin is shorted to GND at the end of each switching cycle. Depending on the the current sensing source impedance, a series input resistor may be required due to the delay between the internal clock and the external power switch. This delay may allow the CS input ISL6740 - Exceeding the over-current threshold will start a delayed shutdown sequence. Once an over current condition is detected, the soft start charge current source is disabled. The soft start capacitor begins discharging through a 25µA current source, and if it discharges to less than 4.25V (Sustained Over Current Threshold), a shutdown condition occurs and the OUTA and OUTB outputs are forced low. When the soft start voltage reaches 0.27V (Reset Threshold) a soft start cycle begins. If the over current condition ceases, and then an additional 50µS period elapses before the shutdown threshold is reached, no shutdown occurs. The SS charging current is re-enabled and the soft start voltage is allowed to recover. ISL6741 - The ISL6741 current mode controller does not shutdown due to an overcurrent condition. The pulse-bypulse current limit characteristic of peak current mode control limits the output current to acceptable levels. GND - Reference and power ground for all functions on this device. Due to high peak currents and high frequency operation, a low impedance layout is necessary. Ground planes and short traces are highly recommended. 9 OUTA and OUT B - Alternate half cycle output stages. Each output is capable of 0.5A peak currents for driving logic level power MOSFETs or MOSFET drivers. Each output provides very low impedance to overshoot and undershoot. VREF - The 5.00V reference voltage output. 1% tolerance over line, load and operating temperature. Bypass to GND with a 0.01µF or larger ceramic capacitor. SS - Connect the soft start timing capacitor between this pin and GND to control the duration of soft start. The value of the capacitor determines the rate of increase of the duty cycle during start up, controls the over current shutdown delay (ISL6740), and the over current and short circuit hiccup restart period. SCSET - Sets the duty cycle threshold that corresponds to a short circuit condition. A resistive divider between RTC and GND or RTD and GND may be used to adjust the SCSET threshold. In either case, the impedance to GND from either RTC or RTD affects the oscillator timing and should be considered when determining the oscillator timing components. Connecting SCSET to GND disables short circuit shutdown and hic-cup. Functional Description Features The ISL6740, ISL6741 PWMs are an excellent choice for low cost bridge and push-pull topologies for applications requiring accurate duty cycle and deadtime control. With its many protection and control features, a highly flexible design with minimal external components is possible. Among its many features are current mode control (ISL6741), adjustable soft start, over current protection, thermal protection, bi-directional synchronization, fault indication, and adjustable frequency. Oscillator The ISL6740, ISL6741 have an oscillator with a programmable frequency range to 2MHz, which can be programmed with two resistors and capacitor. The use of three timing elements, RTC, RTD, and CT allow great flexibility and precision when setting the oscillator frequency. The switching period may be considered the sum of the timing capacitor charge and discharge durations. The charge duration is determined by RTC and CT. The discharge duration is determined by RTD and CT. T C ≈ 0.5 • R TC • C T T D ≈ 0.02 • R TD • C T 1 T SW = T C + T D = -----------F SW (EQ. 2) S (EQ. 3) S S (EQ. 4) ISL6740, ISL6741 where TC and TD are the charge and discharge times, respectively, TSW is the oscillator free running period, and f is the oscillator frequency. One output switching cycle requires two oscillator cycles. The actual times will be slightly longer than calculated due to internal propagation delays of approximately 10ns/transition. This delay ads directly to the switching duration, but also causes overshoot of the timing capacitor peak and valley voltage thresholds, effectively increasing the peak-to-peak voltage on the timing capacitor. Additionally, if very low charge and discharge currents are used, there will be increased error due to the input impedance at the CT pin. The maximum duty cycle, D, and percent deadtime, DT, can be calculated from: TC D = -----------T SW (EQ. 5) DT = 1 – D (EQ. 6) Soft Start Operation The ISL6740, ISL6741 feature a soft start using an external capacitor in conjunction with an internal current source. Soft start reduces stresses and surge currents during start up. Upon start up, the soft start circuitry clamps the error voltage input (VERROR pin) indirectly to a value equal to the soft start voltage. The soft start clamp does not actually clamp the error voltage input as is done in many implementations. Rather the PWM comparator has two inverting inputs such that the lower voltage is in control. The output pulse width increases as the soft start capacitor voltage increases. This has the effect of increasing the duty cycle from zero to the regulation pulse width during the soft start period. When the soft start voltage exceeds the error voltage, soft start is completed. Soft start occurs during start-up, after recovery from a Fault condition or over current/short circuit shutdown. The soft start voltage is clamped to 4.5V. Gate Drive Implementing Synchronization The oscillator can be synchronized to an external clock applied to the SYNC pin or by connecting the SYNC pins of multiple ICs together. If an external master clock signal is used, the free running frequency of the oscillator should be ~10% slower than the desired synchronous frequency. The external master clock signal should have a pulse width greater than 20ns. The SYNC circuitry will not respond to an external signal during the first 60% of the oscillator switching cycle. The SYNC input is edge triggered and its duration does not affect oscillator operation. However, the deadtime is affected by the SYNC frequency. A higher frequency signal applied to the SYNC input will shorten the deadtime. The shortened deadtime is the result of the timing capacitor charge cycle being prematurely terminated by the external SYNC pulse. Consequently, the timing capacitor is not fully charged when the discharge cycle begins. This effect is only a concern when an external master clock is used, or if units with different operating frequencies are paralleled. 10 The ISL6740, ISL6741 are capable of sourcing and sinking 0.5A peak current, but are primarily intended to be used in conjunction with a MOSFET driver due to the 5V drive level. To limit the peak current through the IC, an external resistor may be placed between the totem-pole output of the IC (OUTA or OUTB pin) and the gate of the MOSFET. This small series resistor also damps any oscillations caused by the resonant tank of the parasitic inductances in the traces of the board and the FET’s input capacitance. Under Voltage Monitor and Inhibit The UV input is used for input source under voltage lockout and inhibit functions. If the node voltage falls below 1.00V a UV shutdown fault occurs. This may be caused by low source voltage or by intentional grounding of the pin to disable the outputs. There is a nominal 10µA switched current source used to create hysteresis. The current source is active only during an UV/Inhibit fault; otherwise, it is inactive and does not affect the node voltage. The magnitude of the hysteresis is a function of the external resistor divider impedance. If the resistor divider impedance results in too little hysteresis, a series resistor between the UV pin and the divider may be used to increase the hysteresis. A soft start cycle begins when the UV/Inhibit fault clears. ISL6740, ISL6741 Short Circuit Operation VIN A short circuit condition is defined as the simultaneous occurrence of current limit and a reduced duty cycle. The degree of reduced duty cycle is user adjustable using the SCSET input. A resistor divider between either RTD or RTC and GND to RCSET sets a threshold that is compared to the voltage on the timing capacitor, CT. The resistor divider percentage corresponds to the maximum duty cycle percentage below which a short circuit may exist. If the timing capacitor voltage fails to exceed the threshold before an over current pulse is detected, a short circuit condition exists. A shutdown and soft start cycle will begin if 8 short circuit events occur within 32 oscillator cycles. R1 1.00V + - R3 10µA R2 ON FIGURE 5. UV HYSTERESIS As VIN decreases to a UV condition, the threshold level is: R1 + R2 V IN ( DOWN ) = ---------------------R2 V (EQ. 7) The hysteresis voltage, ∆V, is: ∆V = 10 –5 R1 + R2 • 〈 R1 + R3 • ---------------------- 〉 R2 V (EQ. 8) Setting R3 equal to zero results in the minimum hysteresis, and yields: ∆V = 10 –5 • R1 V (EQ. 9) As VIN increases from a UV condition, the threshold level is: V IN ( UP ) = V IN ( DOWN ) + ∆V V (EQ. 10) Over Current Operation ISL6740 - Over current delayed shutdown is enabled once the soft start cycle is complete. If an over current condition is detected, the soft start charging current source is disabled and the soft start capacitor is allowed to discharge through a 15µA source. At the same time a 50µs re-triggerable oneshot timer is activated. It remains active for 50µs after the over current condition ceases. If the soft start capacitor discharges by more then 0.25V to 4.25V, the output is disabled and the Fault signal asserted. This state continues until the soft start voltage reaches 270mV, at which time a new soft start cycle is initiated. If the over current condition stops at least 50µs prior to the soft start voltage reaching 4.25V, the soft start charging currents revert to normal operation and the soft start voltage is allowed to recover. ISL6741 - Over current results in pulse-by-pulse duty cycle reduction as occurs in any peak current mode controller. This results in a well controlled decrease in output voltage with increasing current beyond the over current threshold. An over current condition in the ISL6741 will not cause a shutdown. 11 Since the current sourced from both RTC and RTD determine the charge and discharge currents for the timing capacitor, the effect of the SCSET divider must be included in the timing calculations. Typically the resistor between RTC and GND is formed by two series resistors with the center node connected to SCSET. Alternatively, SCSET may be set using a voltage between 0V and 2V. This voltage divided by 2 determines the percentage of the maximum duty cycle that corresponds to a short circuit when current limit is active. For example, if the maximum duty cycle is 95% and 1V is applied to SCSET, then the short circuit duty cycle is 50% of 95% or 47.5%. Fault Conditions A Fault condition occurs if VREF falls below 4.65V, the UV input falls below 1.00V, or the thermal protection is triggered (internal or external). When a Fault is detected, OUTA and OUTB outputs are disabled, the Fault signal is asserted, and the soft start capacitor is quickly discharged. When the Fault condition clears and the soft start voltage is below the reset threshold, a soft start cycle begins. An over current condition that results in shutdown (ISL6740), or a short circuit condition also cause assertion of the Fault signal. The difference between a current fault and the faults described earlier is that the soft start capacitor is not quickly discharged. The initiation of a new soft start cycle is delayed while the soft start capacitor is discharged at a 15µA rate. This keeps the average output current to a minimum. Thermal Protection Two methods of over temperature protection are provided. The first method is an on board temperature sensor that protects the device should the junction temperature exceed 145°C. There is approximately 15°C of hysteresis. The second method uses an internal comparator with a 2.5V reference (VREF/2). The non-inverting input to the comparator is accessible through the OTS pin. A thermistor or thermal sensor located at or near the area of interest may be connected to this input. There is a nominal 25µA switched current source used to create hysteresis. The current source is active only during an OT fault; otherwise, it is inactive and ISL6740, ISL6741 does not affect the node voltage.The magnitude of the hysteresis is a function of the external resistor divider impedance. Either a positive temperature coefficient (PTC) or a negative temperature coefficient (NTC) thermistor may be used. If a NTC is desired, position R1 may be substituted. Typical Application The Typical Application Schematic features the ISL6740 in an unregulated half-bridge DC-DC converter configuration, often referred to as a DC Transformer or Bus Regulator. The ISL6740EVAL1 demonstration unit implements this design and is available for evaluation. VREF The input voltage range is 48 ±10%V DC. The output is a nominal 12V when the input voltage is at 48V. Since this is an unregulated topology, the output voltage will vary proportionately with input voltage. The load regulation is a function of resistance between the source and the converter output. The output is rated at 8A. VREF ON R1 25µA VREF/2 R3 + - Circuit Element Descriptions R2 The converter design may be broken down into the following functional blocks: Input Filtering: L1,C1, R1 Half-Bridge Capacitors: C2, C3 FIGURE 6. OTS HYSTERESIS If a PTC is desired, then position R2 may be substituted. The threshold with increasing temperature is set by making the fixed resistance equal in value to the thermistor resistance at the desired trip temperature. To determine the value of the hysteresis resistor, R3, select the value of thermistor resistance that corresponds to the desired reset temperature. 5 Ω (EQ. 11) If the hysteresis resistor, R3, is not desired, the value of the thermistor resistance at the reset temperature can be determined from: 2.5 • R2 R1 = ---------------------------------------–5 2.5 – 10 • R2 Ω ( NTC ) Primary Snubber: C13, R10 Start Bias Regulator: CR3, R2, R7, C6, Q5, D1 Supply Bypass Components: R3, C15, C4, C5 VTH↑ = 2.5 V and R1 = R2 (HOT) 10 • ( R1 – R2 ) – R1 • R2 R3 = ---------------------------------------------------------------------R1 + R2 Isolation Transformer: T1 (EQ. 12) Main MOSFET Power Switch: QH, QL Current Sense Network: T2, CR1, CR2, R5, R6, R11, C10, C14 Control Circuit: U3, RT1, R14, R19, R13, R15, R17, R18, C16, C18, C17 Output Rectification and Filtering: QR1, QR2, QR3, QR4, L2, C9, C8 Secondary Snubber: R8, R9, C11, C12 FET Driver: U1 ZVS Resonant Delay (Optional): L3, C7 2.5 • R1 R2 = ----------------------------------------–5 2.5 + 10 • R1 Ω ( PTC ) (EQ. 13) Design Criteria The following design requirements were selected: The OTS comparator may also be used to monitor signals other than suggested above. It may also be used to monitor any voltage signal for which an excess requires a response as described above. Input or output voltage monitoring are examples of this. Switching Frequency, Fsw: 235kHz VIN: 48 ±10%V VOUT: 12V (nominal) @ IOUT = 8A POUT: 100W Ground Plane Requirements Efficiency: 95% Careful layout is essential for satisfactory operation of the device. A good ground plane must be employed. VDD should be bypassed directly to GND with good high frequency capacitance. Ripple: 1% 12 Transformer Design The design of a transformer for a half-bridge application is a straight forward affair, although iterative. It is a process of many compromises, and even experienced designers will ISL6740, ISL6741 produce different designs when presented with identical requirements. The iterative design process is not presented here for clarity. The factor of 2 divisor is due to the half-bridge topology. Only half of the input voltage is applied to the primary of the transformer. The abbreviated design process follows: A PC44HPQ20/6 “E-Core” plus a PC44PQ20/3 “I-Core” from TDK were selected for the transformer core. The ferrite material is PC44. • Select a core geometry suitable for the application. Constraints of height, footprint, mounting preference, and operating environment will affect the choice. • Determine the turns ratio. • Select suitable core material(s). • Select maximum flux density desired for operation. • Select core size. Core size will be dictated by the capability of the core structure to store the required energy, the number of turns that have to be wound, and the wire gauge needed. Often the window area (the space used for the windings) and power loss determine the final core size. • Determine maximum desired flux density. Depending on the frequency of operation, the core material selected, and the operating environment, the allowed flux density must be determined. The decision of what flux density to allow is often difficult to determine initially. Usually the highest flux density that produces an acceptable design is used, but often the winding geometry dictates a larger core than is indicated based on flux density alone. • Determine the number of primary turns. The core parameter of concern for flux density is the effective core cross sectional area, Ae. For the PQ core pieces selected: Ae = 0.62cm2 or 6.2e -5m2 Using Faraday’s Law, V = N dΦ/dt, the number of primary turns can be determined once the maximum flux density is set. An acceptable Bmax is ultimately determined by the allowable power dissipation in the ferrite material and is influenced by the lossiness of the core, core geometry, operating ambient temperature, and air flow. The TDK datasheet for PC44 material indicates a core loss factor of ~400 mW/cm3 with a ± 2000 gauss 100kHz sinusoidal excitation. The application uses a 235kHz square wave excitation, so no direct comparison between the application and the data can be made. Interpolation of the data is required. The core volume is approximately 1.6cm3, so the estimated core loss is f act 3 mW 200kHz P loss ≈ ----------- • cm • --------------- = 0.4 • 1.6 • --------------------- = 1.28 3 f meas 100kHz cm W (EQ. 15) • Select the wire gauge for each winding. • Determine winding order and insulation requirements. • Verify the design. nSR 1.28W of dissipation is significant for a core of this size. Reducing the flux density to 1200 gauss will reduce the dissipation by about the same percentage, or 40%. Ultimately, evaluation of the transformer’s performance in the application will determine what is acceptable. From Faraday’s Law and using 1200 gauss peak flux density (∆B = 2400 gauss or 0.24 tesla) nS nP nS –6 V IN • T ON 53 • 2 • 10 N = ------------------------------ = ----------------------------------------------------- = 3.56 –5 2 • A e • ∆B 2 • 6.2 • 10 • 0.24 nSR turns (EQ. 16) FIGURE 7. TRANSFORMER SCHEMATIC For this application we have selected a planar structure to achieve a low profile design. A PQ style core was selected because of its round center leg cross section, but there are many suitable core styles available. Since the converter is operating open loop at nearly 100% duty cycle, the turns ratio, N, is simply the ratio of the input voltage to the output voltage divided by 2. V IN 48 N = ------------------------- = --------------- = 2 V OUT • 2 12 • 2 (EQ. 14) 13 Rounding up yields 4 turns for the primary winding. The peak flux density using 4 turns is ~1100 gauss. From EQ. 1, the number of secondary turns is 2. The volts/turn for this design ranges from 5.4V at VIN = 43V to 6.6V at VIN = 53V. Therefore, the synchronous rectifier (SR) windings may be set at 1 turn each with proper FET selection. Selecting 2 turns for the synchronous rectifier windings would also be acceptable, but the gate drive losses would increase. ISL6740, ISL6741 The next step is to determine the equivalent wire gauge for the planar structure. Since each secondary winding conducts for only 50% of the period, the RMS current is I RMS = I OUT • D = 10 • 0.5 = 7.07 A (EQ. 17) where D is the duty cycle. Since an FR-4 PWB planar winding structure was selected, the width of the copper traces is limited by the window area width, and the number of layers is limited by the window area height. The PQ core selected has a usable window area width of 0.165 inches. Allowing one turn per layer and 0.020 inches clearance at the edges allows a maximum trace width of 0.125 inches. Using 100 circular mils(c.m.)/A as a guideline for current density, and from EQ. 17, 707c.m. are required for each of the secondary windings (a circular mil is the area of a circle 0.001 inches in diameter). Converting c.m. to square mils yields 555mils2 (0.785 sq. mils/c.m.). Dividing by the trace width results in a copper thickness of 4.44mils (0.112mm). Using 1.3mils/oz. of copper requires a copper weight of 3.4oz. For reasons of cost, 3oz. copper was selected. The primary windings have an RMS current of approximately 5 A (IOUT x NS/NP at ~ 100% duty cycle). The primary is configured as 2 layers, 2 turns per layer to minimize the winding stack height. Allowing 0.020 inches edge clearance and 0.010 inches between turns yields a trace width of 0.0575 inches. Ignoring the terminal and lead-in resistance, and using EQ. 18, the inner trace has a resistance of 4.25mΩ, and the outer trace has a resistance of 5.52mΩ. The resistance of the primary then is 19.5mΩ at 20°C. The total DC power loss for the secondary at 20°C is 489mW. Improved efficiency and thermal performance could be achieved by selecting heavier copper weight for the windings. Evaluation in the application will determine its need. The order and geometry of the windings affects the AC resistance, winding capacitance, and leakage inductance of the finished transformer. To mitigate these effects, interleaving the windings is necessary. The primary winding is sandwiched between the two secondary windings. The winding layout appears below. One layer of each secondary winding also contains the synchronous rectifier winding. For this layer the secondary trace width is reduced by 0.025 inches to 0.100 inches(0.015 inches for the SR winding trace width and 0.010 inches spacing between the SR winding and the secondary winding). The choice of copper weight may be validated by calculating the DC copper losses of the secondary winding as follows. Ignoring the terminal and lead-in resistance, the resistance of each layer of the secondary may be approximated using EQ. 18. 2πρ R = ----------------------- r 2 t • ln ----- r 1 Ω (EQ. 18) FIGURE 7A. TOP LAYER: 1 TURN SECONDARY AND SR WINDINGS where R = Winding resistance ρ = Resistivity of copper = 669e-9Ω-inches at 20°C t = Thickness of the copper (3 oz.) = 3.9e-3 inches r2 = Outside radius of the copper trace = 0.324 or 0.299 inches r1 = Inside radius of the copper trace = 0.199 inches The winding without the SR winding on the same layer has a DC resistance 2.21mΩ. The winding that shares the layer with the SR winding has a DC resistance of 2.65mΩ. With the secondary configured as a 4 turn center tapped winding (2 turns each side of the tap), the total DC power loss for the secondary at 20°C is 486mW. 14 FIGURE 7B. INT. LAYER 1: 1 TURN SECONDARY WINDING ISL6740, ISL6741 ∅0.689 ∅0.358 0.807 0.639 0.403 0.169 0.000 FIGURE 7C. INT. LAYER 2: 2 TURNS PRIMARY WINDING 0.000 0.184 0.479 0.774 1.054 FIGURE 7G. PWB DIMENSIONS MOSFET Selection The criteria for selection of the primary side half-bridge FETs and the secondary side synchronous rectifier FETs is largely based on the current and voltage rating of the device. However, the FET drain-source capacitance and gate charge cannot be ignored. FIGURE 7D. INT. LAYER 3: 2 TURNS PRIMARY WINDING FIGURE 7E. INT. LAYER 4: 1 TURN SECONDARY WINDING The zero voltage switch (ZVS) transition timing is dependent on the transformer’s leakage inductance and the capacitance at the node between the upper FET source and the lower FET drain. The node capacitance is comprised of the drain-source capacitance of the FETs and the transformer parasitic capacitance. The leakage inductance and capacitance form an LC resonant tank circuit which determines the duration of the transition. The amount of energy stored in the LC tank circuit determines the transition voltage amplitude. If the leakage inductance energy is too low, ZVS operation is not possible and near or partial ZVS operation occurs. As the leakage energy increases, the voltage amplitude increases until it is clamped by the FET body diode to ground or VIN, depending on which FET conducts. When the leakage energy exceeds the minimum required for ZVS operation, the voltage is clamped until the energy is transferred. This behavior increases the time window for ZVS operation.This behavior is not without consequences, however. The transition time and the period of time during which the voltage is clamped reduces the effective duty cycle. The gate charge affects the switching speed of the FETs. Higher gate charge translates into higher drive requirements and/or slower switching speeds. The energy required to drive the gates is dissipated as heat. FIGURE 7F. BOTTOM LAYER: 1 TURN SECONDARY AND SR WINDINGS The maximum input voltage, VIN, plus transient voltage, determines the voltage rating required. With a maximum input voltage of 53V for this application, and if we allow a 10% adder for transients, a voltage rating of 60V or higher will suffice. The RMS current through the each primary side FET can be determined from EQ. 17, substituting 5A of primary current 15 ISL6740, ISL6741 for IOUT. The result is 3.5A RMS. Fairchild FDS3672 FETs, rated at 100V and 7.5A (Rdson = 22mΩ), were selected for the half-bridge switches. capacitance was estimated at 2000pF. Calculations indicate a transition period of ~ 25ns. Verification of the performance yielded a value of TD closer to 45ns. The synchronous rectifier FETs must withstand approximately one half of the input voltage assuming no switching transients are present. This suggests a device capable of withstanding at least 30V is required. Empirical testing in the circuit revealed switching transients of 20V were present across the device indicating a rating of at least 60V is required. The remainder of the switching half-period is the charge time, TC, and can be found from The RMS current rating of 7.07A for each SR FET requires a low Rdson to minimize conduction losses, which is difficult to find in a 60V device. It was decided to use two devices in parallel to simplify the thermal design. Two Fairchild FDS5670 devices are used in parallel for a total of four SR FETs. The FDS5670 is rated at 60V and 10A (Rdson = 14mΩ). Oscillator Component Selection The desired operating frequency of 235kHz for the converter was established in the Design Criteria section. The oscillator frequency operates at twice the frequency of the converter because two clock cycles are required for a complete converter period. During each oscillator cycle the timing capacitor, CT, must be charged and discharged. Determining the required discharge time to achieve zero voltage switching (ZVS) is the critical design goal in selecting the timing components. The discharge time sets the deadtime between the two outputs, and is the same as ZVS transition time. Once the discharge time is determined, the remainder of the period becomes the charge time. The ZVS transition duration is determined by the transformer’s primary leakage inductance, Llk, by the FET Coss, by the transformer’s parasitic winding capacitance, and by any other parasitic elements on the node. The parameters may be determined by measurement, calculation, estimate, or by some combination of these methods. π L lk • ( 2C oss + C xfrmr ) t zvs ≈ -------------------------------------------------------------------2 S (EQ. 19) Device output capacitance, Coss, is non-linear with applied voltage. To find the equivalent discrete capacitance, Cfet, a charge model is used. Using a known current source, the time required to charge the MOSFET drain to the desired operating voltage is determined and the equivalent capacitance is calculated. Ichg • t Cfet = -------------------V (EQ. 20) F Once the estimated transition time is determined, it must be verified directly in the application. The transformer leakage inductance was measured at 125nH and the combined 16 –9 1 1 T C = ---------------- – T D = ---------------------------------- – 45 • 10 = 2.08 3 2 • FS 2 • 235 • 10 µs (EQ. 21) where FS is the converter switching frequency. Using Fig. 4, the capacitor value appropriate to the desired oscillator operating frequency of 470kHz can be selected. A CT value of 100pF, 220pF, or 330pF is appropriate for this frequency. A value of 220pF was selected. To obtain the proper value for RTD, EQ. 3 is used. Since there is a 10ns propagation delay in the oscillator circuit, it must be included in the calculation. The value of RTD selected is 8.06kΩ. A similar procedure is used to determine the value of RTC using EQ. 2. The value of RTC selected is the series combination of 17.4kΩ and 1.27kΩ. See section Over Current Component Selection for further explanation. Output Filter Design The output filter inductor and capacitor selection is simple and straightforward. Under steady state operating conditions the voltage across the inductor is very small due to the large duty cycle. Voltage is applied across the inductor only during the switch transition time, about 45ns in this application. Ignoring the voltage drop across the SR FETs, the voltage across the inductor during the on time with VIN = 48V is V IN • N S • ( 1 – D ) V L = V S – V OUT = ------------------------------------------------ ≈ 250 2N P mV (EQ. 22) where VL is the inductor voltage VS is the voltage across the secondary winding VOUT is the output voltage If we allow a current ramp, ∆I, of 5% of the rated output current, the minimum inductance required is V L • T ON 0.25 • 2.08 L ≥ ------------------------- = ----------------------------- = 1.04 ∆I 0.5 µH (EQ. 23) An inductor value of 1.4µH, rated for 18A was selected. With a maximum input voltage of 53V, the maximum output voltage is about 13V. The closest higher voltage rated capacitor is 16V. Under steady state operating conditions the ripple current in the capacitor is small, so it would seem appropriate to have a low ripple current rated capacitor. ISL6740, ISL6741 However, a high rated ripple current capacitor was selected based on the nature of the intended load, multiple buck regulators. To minimize the output impedance of the filter, a SANYO OSCON 16SH150M capacitor in parallel with a 22µF ceramic capacitor were selected. Over Current Component Selection 15 10 There are two circuit areas to consider when selecting the components for over current protection, current limit and short circuit shutdown. The current limit threshold is fixed at 0.6V while the short circuit threshold is set to a fraction of the duty cycle the designer wishes to define as a short circuit. The current level that corresponds to the over current threshold must be chosen to allow for the dynamic behavior of an open loop converter. In particular, the low inductor ripple current under steady state operation increases significantly as the duty cycle decreases. 5 0.986 0.988 0.990 0.992 0.994 0.996 0.998 1.000 TIME (ms) V (L1:1) I (L1) FIGURE 9. SECONDARY WINDING VOLTAGE AND INDUCTOR CURRENT DURING CURRENT LIMIT OPERATION 14 Fig. 8 and 9 show the behavior of the inductor ripple under steady state and over current conditions. In this example, the peak current limit is set at 11A. The peak current limit causes the duty cycle to decrease resulting in a reduction of the average current through the inductor. The implication is that the converter can not supply the same output current in current limit that it can supply under steady state conditions. The peak current limit setpoint must take this behavior into consideration. A 3.32Ω current sense resistor was selected for the rectified secondary of current transformer T2, corresponding to a peak current limit setpoint of 16.5A. 13 12 11 10 9 8 0.9950 0.9960 0.9970 0.9980 0.9990 1.000 TIME (ms) V (L1:1) I (L1) FIGURE 8. STEADY STATE SECONDARY WINDING VOLTAGE AND INDUCTOR CURRENT The short circuit protection involves setting a voltage between 0 and 2V on the SCSET pin. The applied voltage divided by 2 is the percent of maximum duty cycle that corresponds to a short circuit when the peak current limit is active. A divider from RTC to ground provides an easy method to achieve this. The divider between RTC and GND formed by R13 and R15 determines the percent of maximum duty cycle that corresponds to a short circuit. The divider ratio formed by R13 and R15 is R13 1.27k ----------------------------- = ------------------------------------ = 0.068 R13 + R15 1.27k + 17.4k (EQ. 24) Therefore, the duty cycle that corresponds to a short circuit is 6.8% of D max (97.9%), or ~6.6%. 17 ISL6740, ISL6741 Performance Waveforms The major performance criteria for the converter are efficiency, and to a lesser extent, load regulation. Efficiency, load regulation and line regulation performance are demonstrated in the following Figures. Typical waveforms can be found in the following Figures. Figure 13 shows the output voltage during start up. EFFICIENCY (%) 100 95 90 85 80 75 70 0 1 2 3 4 5 6 LOAD CURRENT (A) 7 8 9 FIGURE 10. EFFICIENCY vs LOAD VIN = 48Vt FIGURE 13. OUTPUT SOFT START OUTPUT VOLTAGE (V) 12.5 Figure 14 shows the output voltage ripple and noise at a 5A load. 12.25 12 11.75 11.5 11.25 11 0 1 2 3 4 5 6 LOAD CURRENT (A) 7 8 9 FIGURE 11. LOAD REGULATION AT VIN = 48V OUPUT VOLTAGE (V) 14 13.5 13 FIGURE 14. OUTPUT RIPPLE AND NOISE - 20 MHz BW 12.5 12 11.5 11 45 46 47 48 49 50 51 52 INPUT VOLTAGE (V) 53 54 FIGURE 12. LINE REGULATION AT IOUT = 1A As expected, the output voltage varies considerably with line and load when compared to an equivalent converter with closed loop feedback. However, for applications where tight regulation is not required, such as those application that use downstream DC-DC converters, this design approach is viable. 18 Figures 15 and 16 show the voltage waveforms at the switching node shared by the upper FET source and the lower FET drain. In particular, Figure 16 shows near ZVS operation at 8 A of load when the upper FET is turning off and the lower FET turning on. There is insufficient energy stored in the leakage inductance to allow complete ZVS operation. However, since the energy stored in the node capacitance is proportional to V2, a significant portion of the energy is still recovered. Figure 17 shows the switching transition between outputs, OUTA and OUTB during steady state operation. The deadtime duration of 48.6ns is clearly shown. ISL6740, ISL6741 Component List REFERENCE DESIGNATOR VALUE DESCRIPTION C1 1.0µF Capacitor, 1812, X7R, 100V, 20% C2, C3 3.3µF Capacitor, 1812, X5R, 50V, 20% C4, C6 1.0µF Capacitor, 0805, X5R, 16V, 10% C5, C15, C16 0.1µF Capacitor, 0603, X7R, 50V, 10% C7 Open Capacitor, 0603, Open C8 22µF Capacitor, 1812, X5R, 16V, 20% C9 150µF Capacitor, Radial, Sanyo 16SH150M C10, C11, C12, 1000pF C13, C14 Capacitor, 0603, X7R, 50V, 10% C17 220pF Capacitor, 0603, COG, 16V, 5% C18 0.047µF Capacitor, 0603, X7R, 16V, 10% C8 330pF FIGURE 15. FET DRAIN-SOURCE VOLTAGE FIGURE 16. FET D-S VOLTAGE NEAR-ZVS TRANSITION FIGURE 17. OUTA - OUTB TRANSITION 19 Capacitor, 0603, COG, 50V, 5% CR1, CR2 Diode, Schottky, BAT54S CR3 Diode, Schottky, BAT54 D1 Zener, 10V, Zetex BZX84C10ZXCT-ND L1 190nH Pulse, P2004T L2 1.5µH Pulse, PG0077.142 L3 Short Jumper or Optional Discrete Leakage Inductance Q5 Transistor, ON MJD31C QL, QH FET, Fairchild FDS3672 QR1, QR2, QR3, QR4 FET, Fairchild FDS5670 R1, R10 3.3 Resistor, 2512, 5% R2 3.01K Resistor, 2512, 1% R3, R6 10.0 Resistor, 0603, 1% R5 3.32 Resistor, 0603, 1% R7 75.0K Resistor, 0805, 1% R8, R9 20.0 Resistor, 0805, 1% R11 100 Resistor, 0603, 1% R12 8.06K Resistor, 0603, 1% R13 17.4K Resistor, 0603, 1% R14 Open Resistor, 0603, Open R15 1.27K Resistor, 0603, 1% R17 97.6K Resistor, 0603, 1% R19, RT1 10.0K Resistor, 0603, 1% T1 Midcom 31718 T2 Pulse P8205T U1 Intersil HIP2101IB U3 ISL6740IB ISL6740, ISL6741 Thin Shrink Small Outline Plastic Packages (TSSOP) M16.173 N 16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE INDEX AREA E 0.25(0.010) M 2 INCHES E1 GAUGE PLANE -B1 B M L 0.05(0.002) -A- SYMBOL MIN MAX MIN MAX NOTES A - 0.043 - 1.10 - A1 3 A D -C- e α c 0.10(0.004) C A M 0.05 0.15 - A2 0.033 0.037 0.85 0.95 - b 0.0075 0.012 0.19 0.30 9 c 0.0035 0.008 0.09 0.20 - B S 0.002 D 0.193 0.201 4.90 5.10 3 0.169 0.177 4.30 4.50 4 0.026 BSC E 0.246 L 0.020 N α NOTES: 1. These package dimensions are within allowable dimensions of JEDEC MO-153-AB, Issue E. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E1” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.15mm (0.006 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimension at maximum material condition. Minimum space between protrusion and adjacent lead is 0.07mm (0.0027 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees) 20 0.006 E1 e A2 A1 b 0.10(0.004) M 0.25 0.010 SEATING PLANE MILLIMETERS 0.65 BSC 0.256 6.25 0.028 0.50 16 0o - 0.70 6 16 8o 0o - 6.50 7 8o Rev. 1 2/02 ISL6740, ISL6741 Small Outline Plastic Packages (SOIC) M16.15 (JEDEC MS-012-AC ISSUE C) 16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE N INCHES INDEX AREA H 0.25(0.010) M B M SYMBOL E -B- 1 2 3 L SEATING PLANE -A- h x 45o A D -C- e B 0.25(0.010) M C 0.10(0.004) C A M B S MILLIMETERS MAX MIN MAX NOTES A 0.053 0.069 1.35 1.75 - A1 0.004 0.010 0.10 0.25 - B 0.014 0.019 0.35 0.49 9 C 0.007 0.010 0.19 0.25 - D 0.386 0.394 9.80 10.00 3 E 0.150 0.157 3.80 4.00 4 e µα A1 MIN 0.050 BSC 1.27 BSC - H 0.228 0.244 5.80 6.20 - h 0.010 0.020 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 8o 0o N α 16 0o 16 7 8o Rev. 1 02/02 NOTES: 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch) 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 21